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    41A SOT23 Search Results

    41A SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    41A SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FMMT491ATA

    Abstract: fmmt491A 41A MARKING SOT23
    Text: A Product Line of Diodes Incorporated FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current


    Original     		PDF FMMT491A 500mW AEC-Q101 J-STD-020 DS33092 FMMT491ATA fmmt491A 41A MARKING SOT23

    100mA-1A

    Abstract: FMMT591A npn 41A FMMT491A DSA003696 1A-10A
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A FMMT491A ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A TYPICAL CHARACTERISTICS 0.5 0.5 +25°C 0.4 -55° C +25° C +100° C 0.3 I+/I*=10 I+/I*=50 I+/I*=100


    Original     		PDF FMMT491A 100mA 100ms 100us FMMT591A 500mA, 100MHz 100mA-1A FMMT591A npn 41A FMMT491A DSA003696 1A-10A

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Medium Power Transistor FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF FMMT491A OT-23 500mA 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF FMMT491A OT-23 500mA 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT491A ISSUE 3 – OCTOBER 1995 FEATURES * Very Low Equivalent Resistance, RCE sat 195mΩ at 1A E C COMPLEMENTARY TYPE – PARTMARKING DETAIL – I+/I*=10 -55° C +25° C +100° C I+/I*=10 I+/I*=50 I+/I*=100


    Original     		PDF FMMT491A FMMT591A 100mA 100ms 100us

    Untitled

    Abstract: No abstract text available
    Text: SLF431ASF Semiconductor Programmable Voltage Reference Features • Programmable output voltage to 36 volts • Sink current capability of 1.0mA to 100mA • Low dynamic impedance 0.15Ω typical • Temperature compensated for operation over full rated operating temperature


    Original     		PDF SLF431ASF 100mA 50ppm/Â SLF431AF OT-23F 0mA-100mA KSI-2035-000

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original     		PDF UT4101 UT4101 UT4101L-AE2-R UT4101G-AE2-R UT4101L-AE3-R UT4101G-AE3-R OT-23-3 OT-23 QW-R502-164

    UT4101

    Abstract: is24
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original     		PDF UT4101 UT4101 UT4101L-AE3-R UT4101G-AE3-R OT-23 QW-R502-164 is24

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT4101 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original     		PDF UT4101 UT4101 UT4101L-AE2-R UT4101G-AE2-R UT4101L-AE3-R UT4101G-AE3-R OT-23-3 OT-23 QW-R502-164

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    Gfk 81a

    Abstract: LT 543 common cathode Gfp 81a MMBZ15ALT1 MZ4623 SOT23 MOS MARKING KE gfk 47a mzp a 001 96 16 MMBZ20ALT1 1N5994B
    Text: TVS/Zeners Transient Voltage Suppressors Zener Regulator and Reference Diodes In Brief . . . Motorola’s standard TVS Transient Voltage Suppressors and Zener diodes comprise the largest inventoried line in the industry. Continuous development of improved manufacturing


    Original     		PDF 1N5283 1N5287 1N5297 1N5298 1N5305 1N5309 1N5310 1N5311 1N5312 1N5313 Gfk 81a LT 543 common cathode Gfp 81a MMBZ15ALT1 MZ4623 SOT23 MOS MARKING KE gfk 47a mzp a 001 96 16 MMBZ20ALT1 1N5994B

    O2MICRO

    Abstract: OZ811LN oz811 275V 0.1uF Capacitor oz811l IHLP5050FDER0R47M01 2N7002 BSC022N03S BSC119N03S MBR0540
    Text: OZ811 Ultra High Efficiency DC-DC Controller FEATURES • • • • • • • • • • • • • • • • GENERAL DESCRIPTION DC-DC SMPS controller with integrated drivers Constant ripple-current control allows optimum inductor size High Efficiency up to 94%


    Original     		PDF OZ811 100mA) OZ811-SF-1 O2MICRO OZ811LN oz811 275V 0.1uF Capacitor oz811l IHLP5050FDER0R47M01 2N7002 BSC022N03S BSC119N03S MBR0540

    amd athlon 5600

    Abstract: HIP6601 dip Circuit diagram of 12v 10w LED driver berg 68000-236 JOLO SPCJ-123-01 HIP6302 HIP6302CB ATX MOTHERBOARD schematic Socket 478 C13-C17 amd athlon PIN LAYOUT
    Text: HIP6302EVAL1 - Multiphase Power Conversion for AMD Athlon Processors up to 35A TM Application Note February 2002 AN9888.1 Author: Matt Harris Introduction Each generation of computer microprocessor brings performance advances in computing power. Performance


    Original     		PDF HIP6302EVAL1 AN9888 amd athlon 5600 HIP6601 dip Circuit diagram of 12v 10w LED driver berg 68000-236 JOLO SPCJ-123-01 HIP6302 HIP6302CB ATX MOTHERBOARD schematic Socket 478 C13-C17 amd athlon PIN LAYOUT

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 3 - OCTOBER 1995 FEATURES * Very Low Equivalent Résistance, RCE lat 195mQ at 1A CO M PLEM EN TA RY TYPE PARTMARKING D E T A IL - FM MT591A 41A ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    OCR Scan     		PDF 195mQ MT591A tr250C 500mA, 100MHz width-300 FMMT491A clc17DS7Ã

    MT591A

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR FMM T491A IS S U E 3 -O C T O B E R 1995 FEATURES * Very Low Equivalent Resistance, RCEisat 195mft at 1A C O M P L E M E N T A R Y TY PE - FM M T591A P A R T M A R K IN G D E T A IL - 41A ABSOLUTE M A X IM U M RATINGS.


    OCR Scan     		PDF 195mft T491A T591A 500mA, 50rnA, 100MHz 300ns. FMMT491A MT591A

    1RLML2402

    Abstract: RLML2402 MARKING CODE PARI SOT23 MARKING tAN SOT-23 diode IRLML2402 rasistor 1RLML mosfet marking code AL sot-23 marking bad sot-23 076A
    Text: 567- öt-b P D - 9.1257 International H I Rectifier IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching Voss = 20V R DS(on) =


    OCR Scan     		PDF 1RLML2402 OT-23 OT-23 Liguria49 3-30-i 1RLML2402 RLML2402 MARKING CODE PARI SOT23 MARKING tAN SOT-23 diode IRLML2402 rasistor 1RLML mosfet marking code AL sot-23 marking bad sot-23 076A

    44641B

    Abstract: A43004
    Text: Afacm m an A M P com pany Step Recovery Diodes MA43000, MA44600, MA44700 Series V 2.00 Features • Low Transition Times • Tight C apacitance Ranges • High Voltage and Low Therm al Resistance for H igher Input Pow er • Surface M ount Package Available SOT-23


    OCR Scan     		PDF OT-23) MA43000, MA44600, MA44700 MA44600 OT-23 MA43000 MIL-S19500, MIL-STD-202 44641B A43004

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    Teledyne F-13

    Abstract: NRF 211 teledyne U series
    Text: TELEDYNE COMPONENTS 2ÖE D H öT17tiDS Q O Ü b4 G3 3 JÊÊ S D 1 1 0 0 , S D Ì 101 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION SDtlOOCHP — SD1100DD SD1100HD 450V, 35 ohm Sorted Chips In Conductive Waffle Pack


    OCR Scan     		PDF T17tiDS TQ-226AA O-206AA O-20SAF SD1100DD SD1100HD SD1101CHP SD1101DD SD1101HD VP0540 Teledyne F-13 NRF 211 teledyne U series

    1N6095

    Abstract: No abstract text available
    Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


    OCR Scan     		PDF 1N6095 1N6096

    3148b

    Abstract: No abstract text available
    Text: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art


    OCR Scan     		PDF MBR3520 MBR3535 MBR3545 MBR3545 3148b

    12v dc full wave bridge rectifier

    Abstract: 5000 watt full bridge design 1N5S34
    Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


    OCR Scan     		PDF 1N5832 1N5834 1N5S34 12v dc full wave bridge rectifier 5000 watt full bridge design

    DIODE SD51

    Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
    Text: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF 150-C 1N6097 1N6098 DIODE SD51 5817 SOD-123 bly 83 Motorola Switchmode SD51

    1N5825

    Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
    Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


    OCR Scan     		PDF 1N5823 1N5824 1N5825 1N5825 diode 1N5825 N5824 1n6823 marking Bq sot23 1N5824 ON