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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    PDF UT4101 UT4101 UT4101G-AE2-R UT4101G-AE3-R OT-23-3 OT-23 QW-R502-164

    UT4101

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages.


    Original
    PDF UT4101 UT4101 UT4101L UT4101-AE3-R UT4101L-AE3-R OT-23 QW-R502-164

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    PDF UT4101 UT4101 UT4101L-AE2-R UT4101G-AE2-R UT4101L-AE3-R UT4101G-AE3-R OT-23-3 OT-23 QW-R502-164

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT4101 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    PDF UT4101 UT4101 UT4101L-AE2-R UT4101G-AE2-R UT4101L-AE3-R UT4101G-AE3-R OT-23-3 OT-23 QW-R502-164

    UT4101

    Abstract: is24
    Text: UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original
    PDF UT4101 UT4101 UT4101L-AE3-R UT4101G-AE3-R OT-23 QW-R502-164 is24

    UB2012X

    Abstract: UB2012C UB2012B UB2012 transistor marking code TS2
    Text: UNISONIC TECHNOLOGIES CO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER „ DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation, charging status


    Original
    PDF UB2012 UB2012 QW-R121-018 UB2012X UB2012C UB2012B transistor marking code TS2

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UB2012 LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER  DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation, charging status


    Original
    PDF UB2012 UB2012 QW-R121-018

    UB2012X

    Abstract: UB2012 UTC SOT223 MARKING 15-V UB2012C
    Text: UNISONIC TECHNOLOGIES CO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADVANCED LINEAR CHARGE MANAGEMENT IC FOR SINGLE AND TWO-CELL LITHIUM-ION AND LITHIUM-POLYMER „ DESCRIPTION UTC UB2012 is designed for portable electronics with lower cost. Its advantages of high-accuracy voltage/current regulation,


    Original
    PDF UB2012 UB2012 QW-R121-018 UB2012X UTC SOT223 MARKING 15-V UB2012C

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UB2012 Preliminary LINEAR INTEGRATED CIRCUIT ADV AN CED LI N EAR CH ARGE M AN AGEM EN T I C FOR SI N GLE AN D T WO-CELL LI T H I U M -I ON AN D LI T H I U M -POLY M ER ̈ DESCRI PT I ON UTC UB2012 is designed for portable electronics with lower cost. Its


    Original
    PDF UB2012 UB2012 QW-R121-018