Untitled
Abstract: No abstract text available
Text: CEP06N5/CEB06N5 Oct. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 500V , 6.6A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
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CEP06N5/CEB06N5
O-220
O-263
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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pin configuration of ic TL084
Abstract: 8085 microprocessor realtime application uln2004 application note LM324 battery tester LM714 blueflash LM144 LM358 LM311 PIN CONFIGURATION ic moc3021 LM714 Application Note
Text: IC Testers VPL-AICT LH2211 LH2311 LM2901 LM3302 HA17339 HA17393 HA17901 HA17903 Analog IC Tester Transistor Arrays ULN2001 ULN2002 ULN2003 ULN2004 ULN2005 ULN2064 ULN2065 ULN2066 ULN2067 ULN2068 ULN2069 ULN2074 ULN2075 TD62501 TD62502 TD62503 TD62504 TD62505
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LH2211
LH2311
LM2901
LM3302
HA17339
HA17393
HA17901
HA17903
ULN2001
ULN2002
pin configuration of ic TL084
8085 microprocessor realtime application
uln2004 application note
LM324 battery tester
LM714
blueflash
LM144
LM358 LM311 PIN CONFIGURATION
ic moc3021
LM714 Application Note
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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d 5072 transistor
Abstract: transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243
Text: IC Testers 70 71 72 73 75 76 77 78 81 82 85 86 89 93 94 95 96 97 98 99 101 102 103 106 107 109 110 147 160 161 162 163 174 175 192 193 194 195 VPL-UICTS Universal IC Tester CMOS ICs MC140 : MC140 FEATURES q Tests most of the 6 to 40 pin ICs in DIP package. The list
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MC140)
MC140
8088/8085/Z80/6502)
OperatN2003
ULN2004
Delhi-110092.
d 5072 transistor
transistor mc140
817 OPTO-coupler
817 OPTO
microprocessor 8255 application seven segment
opto 817
MC140 Datasheet
IC 8155
8282/8283
eprom 8243
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Untitled
Abstract: No abstract text available
Text: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,
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KSM61N20
O-220
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NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
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FDP61N20
Abstract: FCp Series
Text: UniFET TM FDP61N20 200V N-Channel MOSFET Features Description • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 58 nC)
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FDP61N20
O-220
FDP61N20
FCp Series
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDP61N20 200V N-Channel MOSFET Features Description • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 58 nC)
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FDP61N20
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PT 8519
Abstract: PT 4207 2SC4227 marking R34
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS to amplify low noise in the VHF band to the UHF band.
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PA802T
PA802T
PT 8519
PT 4207
2SC4227
marking R34
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NEC 7924
Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Text: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1
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2SC5013
2SC5013-T1
2SC5013-T2
NEC 7924
ic 7924
2SC5013
2SC5013-T1
2SC5013-T2
application of IC 4538
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2n2222 -331 transistors
Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Text: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111
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BC107
BC107A
BC107B
BC108
BC108A
BC108B
BC108C
BC109
BC109B
BC109C
2n2222 -331 transistors
2N2222A 331
2n2222 -331
2n2222 a 331
2n2222 331 transistors
JA101P
2n2222 331
2n3904 331
BC876
bd131 bd132
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTE 10114* 12 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10114 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1.5 GHz. It is ra ted a t 12 w a tts m inim um o u tp u t pow er. N itrid e surface
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BU2725DX
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand Vces pulses up to 1700V.
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BU2725DX
16kHlector-emitter
BU2725DX
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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Untitled
Abstract: No abstract text available
Text: Product Description SLN-276 Stanford M icrodevices’ SLN-276 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost stripline package. A Darlington configuration is used for broadband performance from DC3.5 GHz.
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SLN-276
SLN-276
10tfejG
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WJ-PA15/SMPA15
Abstract: WJ-PA15
Text: WJ-PA15/SMPA15 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH OUTPUT POWER +27.0 dBm TYP. 10-500 MHz ♦ HIGH THIRD-ORDER I.P. +38 dBm (TYP.) ♦ MEDIUM GAIN: 13.5 dB (TYP.) ♦ HIGH DYNAMIC ARTICULATION +118 dB Outline Drawings
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WJ-PA15/SMPA15
50-ohm
DDD7E35
WJ-PA15/SMPA15
WJ-PA15
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transistor k 4110
Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili
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i-noa36Â
osit34Â
354G-01
transistor k 4110
K 4014 transistor
vqe 14e
TLO51
wf vqe 24 d
DIODE 4014
IC 4022
MOC70
S 417T
WF VQE 13
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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Untitled
Abstract: No abstract text available
Text: gë3 Stanford Microdevices Product Description SLN-276 Stanford M icrodevices’ SLN-276 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost stripline package. A Darlington configuration is used for broadband performance from DC3.5 GHz.
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SLN-276
SLN-276
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband
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Q0311b7
BFG34
MSB037
ON4497)
OT103.
CECC50
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Untitled
Abstract: No abstract text available
Text: W J - A 7 - 2 1 S M A 7 - 2 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 2.2 dB TYP. HIGH OUTPUT POWER: +19 dBm (TYP.) HIGH THIRD ORDER IP: +35 dBm (TYP.) LOW DC CURRENT: 25 mA (TYP.) @ +15 Vdc Outline Drawings
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A70-2
50-oh
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