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    40N60B2 Search Results

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    40N60B2 Price and Stock

    IXYS Corporation IXGR40N60B2

    IGBT 600V 60A 167W ISOPLUS247
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    IXYS Corporation IXGH40N60B2

    IGBT 600V 75A 300W TO247
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    IXYS Corporation IXGR40N60B2D1

    IGBT 600V 60A 167W ISOPLUS247
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    IXYS Corporation IXGH40N60B2D1

    IGBT 600V 75A 300W TO247
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    IXYS Integrated Circuits Division IXGH40N60B2D1

    IGBT 600V 75A 300W TO247
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    Win Source Electronics IXGH40N60B2D1 5,260
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    40N60B2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40n60

    Abstract: 40N60B2D1 40N60B2
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching


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    PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 065B1 728B1 123B1 40n60 40N60B2D1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


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    PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 ISOPLUS247 E153432 IF110 2x31-06B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


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    PDF 40N60B2D1 IC110 O-268 O-247 728B1 123B1 728B1 065B1

    40N60B2D1

    Abstract: IXGH40N60B2D1 40n60b2d 065B1 40n60 40N60B2
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


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    PDF 40N60B2D1 IC110 O-268 728B1 123B1 728B1 065B1 40N60B2D1 IXGH40N60B2D1 40n60b2d 40n60 40N60B2

    IXGR40N60B2D1

    Abstract: 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


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    PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 2x31-06B IXGR40N60B2D1 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247

    40N60B2

    Abstract: IXGH40N60B2
    Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 40N60B2 IC110 O-268 40N60B2 IXGH40N60B2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


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    PDF 40N60B2 IC110 O-268 O-247

    ixgr40n60b2d1

    Abstract: IXGR40N60B2 IXGR40N60
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


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    PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 IXGR40N60B2D1) 2x31-06B ixgr40n60b2d1 IXGR40N60B2 IXGR40N60

    ixgr40n60b2d1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


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    PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 IXGR40N60B2D1) 2x31-06B ixgr40n60b2d1

    ixgh40n60b2d1

    Abstract: 40N60B2D1 40n60b QG SMD TRANS
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


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    PDF 40N60B2D1 40N60B2D1 IC110 O-268 O-247 728B1 123B1 065B1 ixgh40n60b2d1 40n60b QG SMD TRANS

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


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    PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2