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onsemi NTHL040N120M3S SIC MOS TO247-3L 40MOHM 1200V M3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTHL040N120M3S	Tube	3,254		1	1 $11.01 10 $11.01 100 $6.56967 1000 $5.22237 10000 $5.22237	Buy Now
Mouser Electronics	NTHL040N120M3S		989			1 $10.51 10 $7.68 100 $7.68 1000 $5.73 10000 $5.22	Buy Now
Newark	NTHL040N120M3S	Bulk	170		1	1 $10.93 10 $7.99 100 $6.48 1000 $5.97 10000 $5.97	Buy Now
Richardson RFPD	NTHL040N120M3S		900		450	1 - 10 - 100 - 1000 $7.5 10000 $7.5	Buy Now
Avnet Asia	NTHL040N120M3S		120	18 Weeks	450	1 - 10 - 100 - 1000 $2.54835 10000 $2.54835	Buy Now

Avnet Silica	NTHL040N120M3S		6,960	19 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTHL040N120M3S		5,550	20 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NTHL040N120M3S		4,440		1	1 - 10 - 100 $21.9 1000 $21.9 10000 $20.27	Buy Now
Wuhan P&S	NTHL040N120M3S		90		1	1 $11.69 10 $11.69 100 $8.56 1000 $6.75 10000 $6.75	Buy Now
Micro Commercial Components MIW40N120FLA-BP IGBT 1200V 40A,TO-247AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MIW40N120FLA-BP	Tube	1,656		1	1 $11.6 10 $8.05 100 $11.6 1000 $5.58876 10000 $5.58876	Buy Now
onsemi NVBG040N120M3S SILICON CARBIDE (SIC) MOSFET-ELI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVBG040N120M3S	Digi-Reel	760		1	1 $19.64 10 $14.048 100 $19.64 1000 $19.64 10000 $19.64	Buy Now
	NVBG040N120M3S	Cut Tape	760		1	1 $19.64 10 $14.048 100 $19.64 1000 $19.64 10000 $19.64	Buy Now
Mouser Electronics	NVBG040N120M3S		240			1 $18.73 10 $16.5 100 $14.27 1000 $11.86 10000 $11.86	Buy Now
Newark	NVBG040N120M3S	Cut Tape	1,400		1	1 $21.7 10 $19.39 100 $17.07 1000 $15.68 10000 $14.56	Buy Now
Richardson RFPD	NVBG040N120M3S		1,600		800	1 - 10 - 100 - 1000 $11.04 10000 $11.04	Buy Now
Avnet Asia	NVBG040N120M3S		96	18 Weeks	800	1 - 10 - 100 - 1000 $11.61842 10000 $10.90123	Buy Now

Avnet Silica	NVBG040N120M3S			19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVBG040N120M3S		28,000	20 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NVBG040N120M3S		22,400		1	1 - 10 - 100 - 1000 $18 10000 $18	Buy Now
Wuhan P&S	NVBG040N120M3S		683		1	1 $30.79 10 $30.79 100 $19.65 1000 $14.9 10000 $14.9	Buy Now
Infineon Technologies AG IKY40N120CS6XKSA1 IGBT TRENCH FS 1200V 80A TO247-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKY40N120CS6XKSA1	Tube	713		1	1 $8.2 10 $8.2 100 $4.77 1000 $3.54137 10000 $3.54137	Buy Now
Newark	IKY40N120CS6XKSA1	Bulk	329		1	1 $7.81 10 $6.79 100 $4.59 1000 $4.41 10000 $4.41	Buy Now
Chip One Stop	IKY40N120CS6XKSA1	Tube	240			1 $5.44 10 $4.66 100 $3.87 1000 $3.87 10000 $3.87	Buy Now
IXYS Corporation IXYH40N120B3D1 IGBT 1200V 86A 480W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH40N120B3D1	Tube	576		1	1 $11.88 10 $11.88 100 $7.58733 1000 $11.88 10000 $11.88	Buy Now
TTI	IXYH40N120B3D1	Tube	300		30	1 - 10 - 100 $9.34 1000 $9.34 10000 $9.34	Buy Now

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40N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
40N120 Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623 Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623	PDF
IXGX40N120BD1 Abstract: max3037 2040q Text: Advanced Technical Information High Voltage IGBT with Diode IXGX 40N120BD1 VCES IC25 VCE sat = 1200 = 75 = 3.3 = 250 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	40N120BD1 IC110 IF110 PLUS247 405B2 IXGX40N120BD1 max3037 2040q	PDF
BSC 27 flyback Abstract: induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic Text: IXEH 40N120B2D4 Advanced Technical Information IC25 = 65 A = 1200 V VCES VCE sat typ = 2.4 V SPT IGBT High Frequency Applications: • induction heating • flyback converters • resonant-mode power supplies C TO-247 AD G E G C E C (TAB) Features IGBT Conditions	Original	40N120B2D4 O-247 BSC 27 flyback induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic	PDF
40N120A Abstract: IXGT 40N120A2 a 3150 40n120 40N120A2 Text: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200	Original	40N120A2 IC110 O-247 40N120A IXGT 40N120A2 a 3150 40n120 40N120A2	PDF
40N120 Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623 Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C	Original	40N120 40N120D1 O-247 40N120 40n120d 40N120D1 40N120 DATASHEET D-68623	PDF
40N120 Abstract: 40N120 DATASHEET D-68623 IXRH40N120 Text: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES	Original	40N120 O-247 IXRH40N120 40N120 40N120 DATASHEET D-68623 IXRH40N120	PDF
40N120 Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	40N120 40N120D1 O-247 40N120 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d	PDF
Untitled Abstract: No abstract text available Text: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES	Original	40N120 O-247 IXRH40N120	PDF
40n120 Abstract: 40N120D1 40N120 DATASHEET 40n120 igbt D-68623 40n120d Text: Advanced Technical Information NPT3 IGBT IC25 IXEH 40N120 IXEH 40N120D1 VCES with optional diode VCE sat typ. = 60 A = 1200 V = 2.4 V TO-247 AD G C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	40N120 40N120D1 O-247 40N120D1 40n120 40N120 DATASHEET 40n120 igbt D-68623 40n120d	PDF
40n120 Abstract: 40N120D1 Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	40N120 40N120D1 O-247 40N120 40N120D1	PDF
40N120 Abstract: No abstract text available Text: IXRH 40N120 Advanced Technical Information VCES = ±1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	40N120 O-247 40N120	PDF
Untitled Abstract: No abstract text available Text: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200	Original	40N120A2 IC110	PDF
Untitled Abstract: No abstract text available Text: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	NGTB40N120IHRWG NGTB40N120IHR/D	PDF
40n120 Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120 Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120	PDF

Untitled Abstract: No abstract text available Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB40N120FLWG NGTB40N120FLW/D	PDF
40N120IHR Abstract: No abstract text available Text: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	NGTB40N120IHRWG NGTB40N120IHR/D 40N120IHR	PDF
Untitled Abstract: No abstract text available Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	NGTB40N120FL2WG NGTB40N120FL2W/D	PDF
Untitled Abstract: No abstract text available Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	NGTB40N120FLWG NGTB40N120FLW/D	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
Untitled Abstract: No abstract text available Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	NGTB40N120FL2WG NGTB40N120FL2W/D	PDF
Untitled Abstract: No abstract text available Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	NGTB40N120FL2WG NGTB40N120FL2W/D	PDF
Untitled Abstract: No abstract text available Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	NGTB40N120FL2WG NGTB40N120FL2W/D	PDF
NGTB40N120LWG Abstract: 40N120L Text: 40N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is	Original	NGTB40N120LWG NGTB40N120L/D 40N120L	PDF
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1	PDF

40N120 Search Results

40N120 Price and Stock

onsemi NTHL040N120M3S

Micro Commercial Components MIW40N120FLA-BP

onsemi NVBG040N120M3S

Infineon Technologies AG IKY40N120CS6XKSA1

IXYS Corporation IXYH40N120B3D1

40N120 Datasheets Context Search

40N120

IXGX40N120BD1

BSC 27 flyback

40N120A

40N120

40N120

40N120

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40n120

40n120

40N120

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40n120

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40N120IHR

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7N60B equivalent

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NGTB40N120LWG

30N120D1