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    IXRH40N120 Price and Stock

    IXYS Corporation IXRH40N120

    IGBT 1200V 55A 300W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXRH40N120 Bulk
    • 1 -
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    New Advantage Corporation IXRH40N120 66 1
    • 1 -
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    • 100 $17.21
    • 1000 $17.21
    • 10000 $17.21
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    IXYS Integrated Circuits Division IXRH40N120

    IGBT DIS.SINGLE 35A 1200V NPT TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXRH40N120 82
    • 1 $13.81274
    • 10 $13.81274
    • 100 $12.9091
    • 1000 $12.9091
    • 10000 $12.9091
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    IXRH40N120 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXRH40N120 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 55A 300W TO247AD Original PDF
    IXRH40N120 IXYS IGBT with Reverse Blocking Capability Original PDF
    IXRH40N120SN IXYS TRANS IGBT CHIP P/N 1200V 1200A 3TO-247 AD Original PDF

    IXRH40N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40N120

    Abstract: 40N120 DATASHEET D-68623 IXRH40N120
    Text: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES


    Original
    PDF 40N120 O-247 IXRH40N120 40N120 40N120 DATASHEET D-68623 IXRH40N120

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    Untitled

    Abstract: No abstract text available
    Text: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES


    Original
    PDF 40N120 O-247 IXRH40N120