GM71C17403b
Abstract: GM71C17403BJ GM71C17403
Text: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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GM71C17403B/BL
300mil
GM71C17403b
GM71C17403BJ
GM71C17403
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7324200ANS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bits DRAMs in 24/26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7324200ANS/SG is
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GMM7324200ANS/SG
GMM7324200ANS/SG
GMM7324200ANS
GMM7324200ANSG
1111111111111111111111l
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KKZ 09
Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
Text: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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GM71V
6163A/AL
42pin
400mil
KKZ 09
kkz 12 28 pin
kkz 12 27 pin
405A757
kkz 12
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM71V16160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V16160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
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GM71V16160A
000Sb72
402A7S7
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m2am
Abstract: No abstract text available
Text: LG Semicon. Co. LTD Description Features The GM M 7361000BS/SG is a 1M x 36 bits Dynamic R A M M ODULE which is assembled 8 pieces o f 1M x 4bit DRAM s in 20/26 pin SOJ package and 4 pieces o f 1M x lb it DRAMs in 20/26 pin SOJ package on both sides the printed
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GMM7361000BS/
GMM7361000BSG
7361000BS/SG
7361000BS/SG
m2am
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GM71C1000B
Abstract: GM7IC1000 GM71C1000 BU80 equivalent tt 2246 576X1
Text: @ LG Semicon. Co. LTD Description Features The GM71C1000B/BL is the new generation dynamic RAM organized 1,048,576 x 1 bit. GM71C1000B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
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GM71CÃ
GM7ICI000B/BL
GM71C1000B
GM7IC1000
GM71C1000
BU80
equivalent tt 2246
576X1
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GMM7321000B
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321000BNS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d eco u p lin g capacitors. The GMM7321000BNS/SG is
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GMM7321000BNS/SG
16bit
GMM7321000BNS/SG
GMM7321000BNS
GMM7321OOOBNSG
000b22b
GMM7321000B
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DNS-60
Abstract: No abstract text available
Text: @ LG Semicon. Co., LTD Description Features The GMM791000DNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package and lM xl D R A M in 20 pin SO J p a ck a g e . The GMM791000DNS is a socket type memory
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GMM791000DNS
GM71C4400DJ,
GMM791000DN
GMM791000DNS-70
GMM791000DN
00075bg
402A757
DNS-60
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bms 14-4
Abstract: LIM EMS 4.0
Text: @ LG Semicon. Co. LTD. Features Description The GMM7322140BMS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 4 pieces o f 2M x 8bit EDO DRAMs in 28 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7322140BMS/SG is
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GMM7322140BMS/SG
GMM7322140BMS/SG
GMM7322140BMS
-GMM7322140BMSG
0b552
bms 14-4
LIM EMS 4.0
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM71C16400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71C16400B/BL has realized higher density, h ig h e r perfo rm an ce and vario u s functions by utilizing advanced CMOS process
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GM71C16400B/BL
GM7ICI6400B/BL
300mil
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