Untitled
Abstract: No abstract text available
Text: ELM5964-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matched for
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ELM5964-7PS
ELM5964-7PS
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FET MARKING
Abstract: ELM5964-4PS ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4
Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for
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ELM5964-4PS
ELM5964-4PS
FET MARKING
ELM5964
Sumitomo elm5964
elm5964-4pst
elm5964-4
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ELM5964-10F
Abstract: JESD22-A114
Text: ELM5964-10F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: hadd=39%(Typ.) ・Broad Band: 5.9～6.4GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION
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ELM5964-10F
ELM5964-10F
1906B,
JESD22-A114
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C-Band Power marking E
Abstract: No abstract text available
Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: add=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for
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ELM5964-4PS
ELM5964-4PS
C-Band Power marking E
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Untitled
Abstract: No abstract text available
Text: ELM5964-10F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=40.5dBm Typ. • High Gain: G1dB=10.0dB(Typ.) • High PAE: hadd=39%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package
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ELM5964-10F
50ohm
ELM5964-10F
50ohm
25deg
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C-Band Internally Matched FET
Abstract: sumitomo 6600 ELM5964-16F sumitomo 131 datasheet Sumitomo elm5964 JESD22-A114D SCL22
Text: ELM5964-16F C-Band Internally Matched FET FEATURES High Output Power: P1dB=42.5dBm Typ High Gain: G1dB=10.0dB (Typ.) High PAE: add=40 %( Typ.) Frequency Band: 5.9~6.4GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package
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ELM5964-16F
ELM5964-16F
C-Band Internally Matched FET
sumitomo 6600
sumitomo 131 datasheet
Sumitomo elm5964
JESD22-A114D
SCL22
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Untitled
Abstract: No abstract text available
Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=37% (Typ.) Frequency Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for
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ELM5964-4PS
ELM5964-4PS
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Untitled
Abstract: No abstract text available
Text: ELM5964 ELM5964-16F C-Band Band Internally Matched FET FEATURES High Output Power: P1dB=42.5dBm 42.5dBm Typ ( High Gain: G1dB=10.0dB (Typ.) High PAE: add=40 %( Typ.) Frequency Band: 5.9~6.4GHz Impedance Matched Zin/Zout = 50 50
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ELM5964
ELM5964-16F
ELM5964-16F
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ELM5964-7PS
Abstract: JESD22-A114 C-Band Power marking E ELM7179-7PS
Text: ELM5964-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matched for
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ELM5964-7PS
ELM5964-7PS
JESD22-A114
C-Band Power marking E
ELM7179-7PS
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