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    40736R Price and Stock

    3M Interconnect 929834-07-36-RK

    Conn Unshrouded Header HDR 36 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: 7010347647)
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    Avnet Americas 929834-07-36-RK Bulk 5 Weeks 300
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    Mouser Electronics 929834-07-36-RK
    • 1 $2.87
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    Newark 929834-07-36-RK Bulk 300
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    3M 929834-07-36-RK

    Pin Strip Header, 36/.100/STR/HDR/1R/.235/.910/PS/TIN/ROHS, 929 Series | 3M 929834-07-36-RK
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    RS 929834-07-36-RK Bulk 300 5 Weeks 1
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    40736R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vp 3082

    Abstract: CA3082 CA3081 DR200 40736R CA3081F CA3081M CA3082M CA3082M96 DR2000
    Text: CA3081, CA3082 Data Sheet November 1999 General Purpose High Current NPN Transistor Arrays • CA3081 - Common Emitter Array The CA3081 and CA3082 are capable of directly driving seven segment displays, and light emitting diode LED displays. These types are also well suited for a variety of


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    PDF CA3081, CA3082 CA3081 CA3082 CA3081) CA3082) 100mA vp 3082 DR200 40736R CA3081F CA3081M CA3082M CA3082M96 DR2000

    vp 3082

    Abstract: Common collector configuration transistor Common collector configuration transistor Common Base configuration CA3081 F16.3 Package CA3082 am 2716 data sheet decoder Ic led display board DR2000
    Text: CA3081, CA3082 Data Sheet September 1998 File Number 480.4 General Purpose High Current NPN Transistor Arrays Features CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


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    PDF CA3081, CA3082 CA3081 CA3082 100mA) vp 3082 Common collector configuration transistor Common collector configuration transistor Common Base configuration F16.3 Package am 2716 data sheet decoder Ic led display board DR2000

    vp 3082

    Abstract: Common collector configuration HARRIS 3081 transistor Common collector configuration CA3081 CA3081 HARRIS CA3082 CA3082F RCA3081 CA3081F
    Text: S E M I C O N D U C T O R CA3081, CA3082 General Purpose High Current NPN Transistor Arrays November 1996 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic


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    PDF CA3081, CA3082 CA3081 CA3082 100mA) CA3081) vp 3082 Common collector configuration HARRIS 3081 transistor Common collector configuration CA3081 HARRIS CA3082F RCA3081 CA3081F

    CA3081

    Abstract: vp 3082 transistor Common collector configuration 40736R CA3081F CA3081M CA3082 CA3082M CA3082M96 DR2000
    Text: CA3081, CA3082 UCT PROD E PRODUCT E T E L T O B SO STITU er at E SUB upport Cen t sc L IB S /t POS al S il.com FOR A ou r Technic wData .intersSheet w t w c a IL or c ont NTERS 1-888-I General Purpose High Current NPN Transistor Arrays 480.6 • CA3081 - Common Emitter Array


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    PDF CA3081, CA3082 1-888-I CA3081 CA3082 vp 3082 transistor Common collector configuration 40736R CA3081F CA3081M CA3082M CA3082M96 DR2000

    ca3082f

    Abstract: transistor Common collector configuration CA3081 CA3082 CA3081 HARRIS DR2000 applications of ca3081 CA3081F CA3081M CA3081M96
    Text: S E M I C O N D U C T O R CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays May 1994 March 1993 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon n-p-n transistors on a common monolithic substrate. The


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    PDF CA3081, CA3082 CA3081 CA3082 100mA) CA3081) ca3082f transistor Common collector configuration CA3081 HARRIS DR2000 applications of ca3081 CA3081F CA3081M CA3081M96

    Thyristor bst 2

    Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
    Text: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse


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    PDF CA3081, CA3082 1-888-I CA3082 CA3081) CA3082) 100mA Thyristor bst 2 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96

    vp 3082

    Abstract: transistor Common collector configuration thyristor firing circuit Common collector configuration IC 4804 CA3082 CA3081 CA3081 HARRIS transistor Common Base configuration DR2000
    Text: CA3081, CA3082 Semiconductor September 1998 File Number 480.4 General Purpose High Current NPN Transistor Arrays Features CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


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    PDF CA3081, CA3082 CA3081 CA3082 100mA) vp 3082 transistor Common collector configuration thyristor firing circuit Common collector configuration IC 4804 CA3081 HARRIS transistor Common Base configuration DR2000

    CA3084

    Abstract: rca transistor transistor Common collector configuration CA3084 transistor common collector npn array CA3081 RCA numitron arrays 5 transistor dip.16 rca power transistor DR2000
    Text: Transistor Arrays General-Purpose High-Current n -p -n Transistor Arrays G CA3081 CA3082 Applications and Features Drivers fo r: 7-segment incandescent displays e.g. RCA N U M IT R O N DR 2000 Series L ig h t-E m ittin g -D io de s (L E D ) displays (e.g. RCA 40736R )


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    PDF 9ZCS-2384 92CS-24991 16-Lead CA3081 CA3082 DR2000 40736R) CA3081 CA3082) CA3084 rca transistor transistor Common collector configuration CA3084 transistor common collector npn array CA3081 RCA numitron arrays 5 transistor dip.16 rca power transistor

    Untitled

    Abstract: No abstract text available
    Text: CA3081, CA3082 Semiconductor September 1998 General Purpose High Current NPN Transistor Arrays 480.4 Features • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


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    PDF CA3081, CA3082 CA3081 CA3082 100mA)

    TRANSISTOR ED203

    Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
    Text: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the


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    PDF 1N2175 TRANSISTOR ED203 FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa

    vp 3082

    Abstract: CA3081 Display device - Light Emitting Diode LED CA3082 Harris 3081 DR2000 DR2000 equivalent
    Text: h a r CA3081, CA3082 ® S E M I C O N D U C T O R W General Purpose High Current NPN Transistor Arrays November 1996 Features Description • CA3081 - Common Emitter Array CA3081 and C A 3 08 2 co n sist o f seven high cu rre n t to 100m A silicon NPN transisto rs on a com m o n m on olithic


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    PDF CA3081, CA3082 CA3081 CA3082 CA3081) CA3082) 100mA vp 3082 Display device - Light Emitting Diode LED Harris 3081 DR2000 DR2000 equivalent

    vp 3082

    Abstract: CA3081 CA3082
    Text: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


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    PDF CA3081, CA3082 CA3081 CA3082 100mA) vp 3082

    TIL702

    Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
    Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or


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    PDF LCC4230-D EPN4050 TIL702 TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6

    CA3081

    Abstract: CA3082 CA3081 HARRIS CA3081F transistor Common collector configuration DR2000 equivalent
    Text: HA RR IS SEMICON] S E CT OR HARRIS S E M I C O N D U C T O R 4 3 0 2 27 1 O G H T D G l 276 blE D HAS CA3081, CA3082 General Purpose High Current N-P-N Transistor Arrays March 1993 Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA)


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    PDF CA3081, CA3082 CA3081 CA3082 100mA) CA3081 HARRIS CA3081F transistor Common collector configuration DR2000 equivalent

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756