NEMA-42
Abstract: hard disc motor driver inductive joystick circuit robotic arm wiper motor wiring circuit stepper motor nema34 slotted wave guide antenna wiper motor rear circuits SMC-40 NEMA-34
Text: MSTEP-407 HARDWARE MANUAL mSTEP-407 Rev. B Hardware Manual Revision Date: 06/14/2010 Advanced Micro Systems, Inc.|www.stepcontrol.com i MSTEP-407 HARDWARE MANUAL Table of Contents 1) Hardware Overview . 3
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MSTEP-407
mSTEP-407
IBC-400
SIN-11
NEMA-42
hard disc motor driver
inductive joystick circuit
robotic arm
wiper motor
wiring circuit stepper motor nema34
slotted wave guide antenna
wiper motor rear circuits
SMC-40
NEMA-34
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Untitled
Abstract: No abstract text available
Text: Product Description SSW-407 Stanford Microdevices’ SSW-407 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch
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SSW-407
55dBm
SSW-407
500MHz
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UMW8N
Abstract: UMW7 FMW8 C101 UMW6N FMW10 UMW10N C102
Text: Transistors UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4 UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 94S-404-C101 (94S-407-C102) 596
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UMW10N
FMW10
94S-404-C101)
94S-407-C102)
UMW8N
UMW7
FMW8
C101
UMW6N
C102
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inductive joystick
Abstract: No abstract text available
Text: mSTEP-407 Microstep Positioning System 7 Amps / 80 Volts of High Performance Motion Control in . m 5 2. 5 m . 63 3 76. .0 in . 2m m Shown here with “Encoder Feedback” option OVERVIEW The mSTEP-407 is an intelligent microstep positioning system that packs all the desired features for accurate, high
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mSTEP-407
mSTEP-407
inductive joystick
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 407 Devices Qualified Level 2N3055 JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
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MIL-PRF-19500/
2N3055
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2N3055 JAN
Abstract: 2n3055 2n3055 IC 2N3055 power circuit 2N3055 TO-3 JANTX 2n3055 2N3055 JANTX hfe 2n3055 2N3055 silicon 2N3055JAN
Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices Qualified Level 2N3055 JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
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MIL-PRF-19500/407
2N3055
O-204AAe
2N3055 JAN
2n3055
2n3055 IC
2N3055 power circuit
2N3055 TO-3
JANTX 2n3055
2N3055 JANTX
hfe 2n3055
2N3055 silicon
2N3055JAN
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Untitled
Abstract: No abstract text available
Text: NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 TO-204AA Package Maximum Ratings Ratings Symbol Value Units 70 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage VEBO
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2N3055
MIL-PRF-19500/407
O-204AA)
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10a h-bridge driver
Abstract: LTC6103 Complementary MOSFETs
Text: advertisement Dual Current-Sense Amplifiers Simplify H-Bridge Load Monitoring Design Note 407 Jon Munson Introduction The H-bridge power-transistor topology is increasingly popular as a means of driving motors and other loads bidirectionally from a single supply potential. In most cases
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DN407
LTC6103
LTC6104
dn407f
10a h-bridge driver
Complementary MOSFETs
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2N3055
Abstract: TRANSISTOR 2n3055 2N3055 JAN
Text: NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 TO-204AA Package Maximum Ratings Ratings Symbol Value Units 70 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage VEBO
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2N3055
MIL-PRF-19500/407
O-204AA)
TRANSISTOR 2n3055
2N3055 JAN
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transistor Bu 208
Abstract: BU407 transistors bu 407
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BU 407 BU407 NPN PLASTIC POWER TRANSISTOR High Voltage, High Speed Transistors for Horizontal Deflection
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O-220
BU407
C-120
transistor Bu 208
BU407
transistors bu 407
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MRF752
Abstract: No abstract text available
Text: MRF752 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE .280" 4L PILL The ASI MRF752 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 1 FEATURES INCLUDE: • High Power Gain • Infinite VSWR 3 4 MAXIMUM RATINGS
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MRF752
MRF752
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STM820
Abstract: STM-430 STM-741 STM-820 STM422 stm360 STM322 STM3600 STM431 STM-841
Text: SEMICONDUCTOR TECHNOLOGY OSE T> SEMICONDUCTOR TECHNOLOGY, INC. fll3bM50 D00D231 1 T- 3^-01 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 HIGH VOLTAGE MOS POWER FIELD EFFECT TRANSISTORS (N-CHANNEL) STI Type
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STM-321
IRF321
STM-322
IRF322
STM-323
IRF323
O-220
STM-830
IRF830
STM820
STM-430
STM-741
STM-820
STM422
stm360
STM322
STM3600
STM431
STM-841
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Untitled
Abstract: No abstract text available
Text: SSW-407 Product Description Stanford M icrodevices’ SSW -407 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch
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SSW-407
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NT 407 F transistor
Abstract: nt 407 f eltec NT 407 DS407 To5 transistor
Text: Model 407 EU TEC Thermally Compensateci Pyroelectric IR Detector Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 407 consists of two lithium tantalate sensing elements,
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32T4GM1
DS407
NT 407 F transistor
nt 407 f
eltec
NT 407
DS407
To5 transistor
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SLN-407
Abstract: No abstract text available
Text: 1Stanford Microdevices SLN-407 Product Description Stanford M icrodevices’ SLN-407 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount MSOP8 plastic package. H eterojunc tion technology is utilized for ultra-linear performance to 2.5
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SLN-407
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2N6522
Abstract: ir6062 IR5064 IR6060 MM6427 D45E11 IR6002 2N999 IR5000 IR5253
Text: SE MIC OND UC TO R TECHNOL OGY GSE D | fll3b4Sfl Ü0DD23S T r_ T4 7 / SEMICONDUCTOR TECHNOLOGY, INC. 3131 S.t. Jay^treet ¿7 stuarti F |0rida 34997 7" - 33 3 / 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 ' NPN & PNP' SILICON DARLINGTON TRANSISTORS
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0DD23S
2N997
2N998
2N999
2N2723
2N2785
2N99B
2N6522
ir6062
IR5064
IR6060
MM6427
D45E11
IR6002
IR5000
IR5253
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Untitled
Abstract: No abstract text available
Text: r a â Sîmifiml Mlcrode¥Ìces SSW-407 Product Description Stanford M icrodevices’ SSW -407 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Power
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55dBm
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NT 407 F transistor
Abstract: NT 407 F power transistor SLN-407
Text: H Siali ford Microdevices SLN-407 Product Description Stanford M icrodevices’ SLN-407 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount MSOP8 plastic package. H eterojunc tion technology is utilized for ultra-linear performance to 2.5
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SLN-407
SLN-407
NT 407 F transistor
NT 407 F power transistor
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ST-13002
Abstract: mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009
Text: SEMICONDUCTOR T EC H N O LO G Y , INC. SE MIC OND UC TO R TECHNOL OGY DSE D I fll3b45fl □ □ □ □ 2 3 3 5 I - 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS
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GDDD533
ST44TE5
D44TE5
O-220
ST-12007
MJE-12007
ST-13002
MJE-13002
mje 340 transistor
transistor d 13009
transistor mje 13003
transistor d 13007
STH11
ST13003
MJE 5740
STH16006A
transistor E 13009
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MD14
Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p
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34S37
510-953-7b'
2N2726
2N2727
2N2858
2N2859
N2988
2N2989
2N5058
N5059
MD14
2N4069
2N4358
2N4438
2N2990
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2N3916
Abstract: 2N2196 2N2197 2N3444 2N3053 NPN transistor 2N491B 2N1445 2N1480 2N1700 2N1715
Text: 1 OSE D • fll3b4Sfl □QGQSM7 5 SEMICONDUCTOR TEC H N O LO G Y , INC. 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 _ FAX 407-P8fi-8914 T -o Z q -O I SILICON TRANSISTORS r M E D I U M A M D H IG H P O W E R _
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0000S47
2N497A
2N498A
2N656
2N656A
2N657A
2N1445
2N1480
2N1700
2N1715
2N3916
2N2196
2N2197
2N3444
2N3053 NPN transistor
2N491B
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2N3902
Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
Text: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS
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A13L45B
o413LS^
2N3902
2N4347
2N5157
2N5239
2N5240
2N5466
2N5467
2N5685
2N5686
2N6511
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Motorola transistors MRF646
Abstract: Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF754 MRF846 MRF839 MRF515 MRF644
Text: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors Higher power output devices in this UHF power transistor series feature internally input-matched construction, are designed
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MRF750
05A-0Ã
MRF752
MRF754
MRF627
MRF559
MRF581
MRF515
Motorola transistors MRF646
Mrf648
Motorola transistors MRF648
MRF646
MRF648 applications
MRF846
MRF839
MRF644
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K 2545 transistor
Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S
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BF421S
BF420S
BF423S
150K/W
T0126
15A3DIN
K 2545 transistor
41 BF transistor
transistor bf 422
transistor BF 606
BF 830 transistor
transistor marking code 41 BF
transistors bf 423
BF423S
Transistor marking code K
transistor BF 423
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