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    407 TRANSISTOR Search Results

    407 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    407 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEMA-42

    Abstract: hard disc motor driver inductive joystick circuit robotic arm wiper motor wiring circuit stepper motor nema34 slotted wave guide antenna wiper motor rear circuits SMC-40 NEMA-34
    Text: MSTEP-407 HARDWARE MANUAL mSTEP-407 Rev. B Hardware Manual Revision Date: 06/14/2010 Advanced Micro Systems, Inc.|www.stepcontrol.com i MSTEP-407 HARDWARE MANUAL Table of Contents 1) Hardware Overview . 3


    Original     		PDF MSTEP-407 mSTEP-407 IBC-400 SIN-11 NEMA-42 hard disc motor driver inductive joystick circuit robotic arm wiper motor wiring circuit stepper motor nema34 slotted wave guide antenna wiper motor rear circuits SMC-40 NEMA-34

    Untitled

    Abstract: No abstract text available
    Text: Product Description SSW-407 Stanford Microdevices’ SSW-407 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch


    Original     		PDF SSW-407 55dBm SSW-407 500MHz

    UMW8N

    Abstract: UMW7 FMW8 C101 UMW6N FMW10 UMW10N C102
    Text: Transistors UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4 UMW7N / UMW8N / UMX5N / FMW7 / FMW8 / IMX5 94S-404-C101 (94S-407-C102) 596


    Original     		PDF UMW10N FMW10 94S-404-C101) 94S-407-C102) UMW8N UMW7 FMW8 C101 UMW6N C102

    inductive joystick

    Abstract: No abstract text available
    Text: mSTEP-407 Microstep Positioning System 7 Amps / 80 Volts of High Performance Motion Control in . m 5 2. 5 m . 63 3 76. .0 in . 2m m Shown here with “Encoder Feedback” option OVERVIEW The mSTEP-407 is an intelligent microstep positioning system that packs all the desired features for accurate, high


    Original     		PDF mSTEP-407 mSTEP-407 inductive joystick

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 407 Devices Qualified Level 2N3055 JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation


    Original     		PDF MIL-PRF-19500/ 2N3055

    2N3055 JAN

    Abstract: 2n3055 2n3055 IC 2N3055 power circuit 2N3055 TO-3 JANTX 2n3055 2N3055 JANTX hfe 2n3055 2N3055 silicon 2N3055JAN
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices Qualified Level 2N3055 JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation


    Original     		PDF MIL-PRF-19500/407 2N3055 O-204AAe 2N3055 JAN 2n3055 2n3055 IC 2N3055 power circuit 2N3055 TO-3 JANTX 2n3055 2N3055 JANTX hfe 2n3055 2N3055 silicon 2N3055JAN

    Untitled

    Abstract: No abstract text available
    Text: NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 TO-204AA Package Maximum Ratings Ratings Symbol Value Units 70 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage VEBO


    Original     		PDF 2N3055 MIL-PRF-19500/407 O-204AA)

    10a h-bridge driver

    Abstract: LTC6103 Complementary MOSFETs
    Text: advertisement Dual Current-Sense Amplifiers Simplify H-Bridge Load Monitoring Design Note 407 Jon Munson Introduction The H-bridge power-transistor topology is increasingly popular as a means of driving motors and other loads bidirectionally from a single supply potential. In most cases


    Original     		PDF DN407 LTC6103 LTC6104 dn407f 10a h-bridge driver Complementary MOSFETs

    2N3055

    Abstract: TRANSISTOR 2n3055 2N3055 JAN
    Text: NPN Power Silicon Transistor 2N3055 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 • TO-3 TO-204AA Package Maximum Ratings Ratings Symbol Value Units 70 Vdc Collector - Base Voltage VCEO VCBO 100 Vdc Emitter - Base Voltage VEBO


    Original     		PDF 2N3055 MIL-PRF-19500/407 O-204AA) TRANSISTOR 2n3055 2N3055 JAN

    transistor Bu 208

    Abstract: BU407 transistors bu 407
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BU 407 BU407 NPN PLASTIC POWER TRANSISTOR High Voltage, High Speed Transistors for Horizontal Deflection


    Original     		PDF O-220 BU407 C-120 transistor Bu 208 BU407 transistors bu 407

    MRF752

    Abstract: No abstract text available
    Text: MRF752 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE .280" 4L PILL The ASI MRF752 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 1 FEATURES INCLUDE: • High Power Gain • Infinite VSWR 3 4 MAXIMUM RATINGS


    Original     		PDF MRF752 MRF752

    STM820

    Abstract: STM-430 STM-741 STM-820 STM422 stm360 STM322 STM3600 STM431 STM-841
    Text: SEMICONDUCTOR TECHNOLOGY OSE T> SEMICONDUCTOR TECHNOLOGY, INC. fll3bM50 D00D231 1 T- 3^-01 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 HIGH VOLTAGE MOS POWER FIELD EFFECT TRANSISTORS (N-CHANNEL) STI Type


    OCR Scan     		PDF STM-321 IRF321 STM-322 IRF322 STM-323 IRF323 O-220 STM-830 IRF830 STM820 STM-430 STM-741 STM-820 STM422 stm360 STM322 STM3600 STM431 STM-841

    Untitled

    Abstract: No abstract text available
    Text: SSW-407 Product Description Stanford M icrodevices’ SSW -407 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Power GaAs MMIC SPDT Switch


    OCR Scan     		PDF SSW-407

    NT 407 F transistor

    Abstract: nt 407 f eltec NT 407 DS407 To5 transistor
    Text: Model 407 EU TEC Thermally Compensateci Pyroelectric IR Detector Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 407 consists of two lithium tantalate sensing elements,


    OCR Scan     		PDF 32T4GM1 DS407 NT 407 F transistor nt 407 f eltec NT 407 DS407 To5 transistor

    SLN-407

    Abstract: No abstract text available
    Text: 1Stanford Microdevices SLN-407 Product Description Stanford M icrodevices’ SLN-407 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount MSOP8 plastic package. H eterojunc­ tion technology is utilized for ultra-linear performance to 2.5


    OCR Scan     		PDF SLN-407

    2N6522

    Abstract: ir6062 IR5064 IR6060 MM6427 D45E11 IR6002 2N999 IR5000 IR5253
    Text: SE MIC OND UC TO R TECHNOL OGY GSE D | fll3b4Sfl Ü0DD23S T r_ T4 7 / SEMICONDUCTOR TECHNOLOGY, INC. 3131 S.t. Jay^treet ¿7 stuarti F |0rida 34997 7" - 33 3 / 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 ' NPN & PNP' SILICON DARLINGTON TRANSISTORS


    OCR Scan     		PDF 0DD23S 2N997 2N998 2N999 2N2723 2N2785 2N99B 2N6522 ir6062 IR5064 IR6060 MM6427 D45E11 IR6002 IR5000 IR5253

    Untitled

    Abstract: No abstract text available
    Text: r a â Sîmifiml Mlcrode¥Ìces SSW-407 Product Description Stanford M icrodevices’ SSW -407 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Power


    OCR Scan     		PDF 55dBm

    NT 407 F transistor

    Abstract: NT 407 F power transistor SLN-407
    Text: H Siali ford Microdevices SLN-407 Product Description Stanford M icrodevices’ SLN-407 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface m ount MSOP8 plastic package. H eterojunc­ tion technology is utilized for ultra-linear performance to 2.5


    OCR Scan     		PDF SLN-407 SLN-407 NT 407 F transistor NT 407 F power transistor

    ST-13002

    Abstract: mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009
    Text: SEMICONDUCTOR T EC H N O LO G Y , INC. SE MIC OND UC TO R TECHNOL OGY DSE D I fll3b45fl □ □ □ □ 2 3 3 5 I - 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS


    OCR Scan     		PDF GDDD533 ST44TE5 D44TE5 O-220 ST-12007 MJE-12007 ST-13002 MJE-13002 mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009

    MD14

    Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
    Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p


    OCR Scan     		PDF 34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990

    2N3916

    Abstract: 2N2196 2N2197 2N3444 2N3053 NPN transistor 2N491B 2N1445 2N1480 2N1700 2N1715
    Text: 1 OSE D • fll3b4Sfl □QGQSM7 5 SEMICONDUCTOR TEC H N O LO G Y , INC. 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 _ FAX 407-P8fi-8914 T -o Z q -O I SILICON TRANSISTORS r M E D I U M A M D H IG H P O W E R _


    OCR Scan     		PDF 0000S47 2N497A 2N498A 2N656 2N656A 2N657A 2N1445 2N1480 2N1700 2N1715 2N3916 2N2196 2N2197 2N3444 2N3053 NPN transistor 2N491B

    2N3902

    Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
    Text: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS


    OCR Scan     		PDF A13L45B o413LS^ 2N3902 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511

    Motorola transistors MRF646

    Abstract: Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF754 MRF846 MRF839 MRF515 MRF644
    Text: RF PRODUCTS — BIPOLAR POWER TRANSISTORS continued <C^, TO-22Q 333-03 UHF Applications (continued) 317-01 407-512 MHz, UHF FM Transistors Higher power output devices in this UHF power transistor series feature internally input-matched construction, are designed


    OCR Scan     		PDF MRF750 05A-0Ã MRF752 MRF754 MRF627 MRF559 MRF581 MRF515 Motorola transistors MRF646 Mrf648 Motorola transistors MRF648 MRF646 MRF648 applications MRF846 MRF839 MRF644

    K 2545 transistor

    Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S


    OCR Scan     		PDF BF421S BF420S BF423S 150K/W T0126 15A3DIN K 2545 transistor 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423