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    400V P-CHANNEL IGBT Search Results

    400V P-CHANNEL IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    400V P-CHANNEL IGBT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12N50E

    Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
    Text: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.


    OCR Scan     		0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40 PDF

    20N50E1

    Abstract: 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1
    Text: m U A Q D ie lÜ HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Packages Features H G TH -TY P E S JE D E C TO -218A C • 15A and 20A, 400V and 500V EMrTTER • V CE ON 2 -5 V COLLECTOR • Tp 1jjs, 0.5(is


    OCR Scan     		HGTP15N40C1, HGTH20N40C1, -218A -220A HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40E1, 20N50E1 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1 PDF

    RE26A

    Abstract: No abstract text available
    Text: Data Sheet No. PD-6.086A International I O R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features Floating channel designed for bootstrap VOFFSET 400V max. lo+/- 2A/2A VOUT 1 0 -2 0 V ton/off ty p . 120 & 94 ns Delay Matching 10 ns


    OCR Scan     		2110E4 RE26A PDF

    Diode LT 443

    Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
    Text: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.


    OCR Scan     		HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D TD-220AB TP10N AN7254 AN7260) Diode LT 443 diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D PDF

    Untitled

    Abstract: No abstract text available
    Text: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage


    OCR Scan     		IRGCH50ME 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage


    OCR Scan     		IRGCH40SE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V


    OCR Scan     		IRGCC30UE 250pA, 250pA PDF

    reverse phase control igbt dimmer schematic

    Abstract: SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor
    Text: AN1491 APPLICATION NOTE IGBT BASICS M. Aleo mario.aleo@st.com 1. INTRODUCTION. IGBTs (Insulated Gate Bipolar Transistors) combine the simplicity of drive and the excellent fast switching capability of the MOSFET structure with the ability to handle high current values typical of a


    Original     		AN1491 1980s, 130kHz. reverse phase control igbt dimmer schematic SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor PDF

    g6n50e

    Abstract: HGTD6N50E1S G6N40E G6N50 flange terminal 25C1 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A R R IS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Packages Features HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EM ITTER • T f a l l 1 1 -0 ^3


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1S HGTD6N40E1 O-251AA g6n50e G6N40E G6N50 flange terminal 25C1 HGTD6N40E1S HGTD6N50E1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage


    OCR Scan     		PM1426 IRGCC40UE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier PD-9.1440 IRGCH20SE TARGET IRGCH20SE IGBT Die in Wafer Form 1200 V Size 2 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE (on) Collector-to-Em itter Saturation Voltage


    OCR Scan     		IRGCH20SE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1430 International lö R Rectifier IRGCC30FE TARGET IRGCC30FE IGBT Die in Wafer Form 600 V Size 3 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) V c E (o n ) P a ra m e te r Collector-to-Em itter Saturation Voltage


    OCR Scan     		IRGCC30FE IRGCC30FE PDF

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.


    OCR Scan     		P-942 IRGCH40KE IRGCH40KE 250pA, 250pA PDF

    irgpc50m

    Abstract: No abstract text available
    Text: PD-9.1423 International IQ R Rectifier IRGCC50ME TARGET IRGCC50ME IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5” Wafer Electrical Characteristics Wafer Form Param eter VCE (on) Description Guaranteed (Min/Max) Coliector-to-Emitter Saturation Voltage


    OCR Scan     		PD-9-1423 IRGCC50ME 250pA, irgpc50m PDF

    Untitled

    Abstract: No abstract text available
    Text: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.


    OCR Scan     		P-944 IRGCC50KE IRGCC50KE 250pA, PDF

    Untitled

    Abstract: No abstract text available
    Text: International is s r Rectifier pd-9.«3i IRGCC20UE TARGET IRGCC20UE IGBT Die in Wafer Form 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (M in/M ax) V ce (on) Parameter Collector-to-Emitter Saturation Voltage


    OCR Scan     		IRGCC20UE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter


    OCR Scan     		IRGCH50FE IRGCH50FE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.


    OCR Scan     		IRGCH50SE IRGCH50SE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier pd-9M 25 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Param eter Collector-to-Emitter Saturation Voltage


    OCR Scan     		IRGCC50FE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage


    OCR Scan     		P-947 IRGCC40KE IRGCC40KE 250pA, 250pA PDF

    SKM400GB123D

    Abstract: SKM400GB128D SKM600GB126D igbt based high frequency inverter MOSFET circuit welding INVERTER rectangular RBSOA inverter welder circuit MOSFET welding INVERTER IGBT welder circuit welder inverter mosfet
    Text: Modern IGBT/FWD chip sets for 1200V applications J. Li, R. Herzer, R. Annacker, B. Koenig Semikron Elektronik GmbH, Sigmundstr. 200, 90431 Nuremberg, Germany Tel. +49.911.6559.159 Fax: +49.911.6559.293 E-mail: li.yi@semikron.com Abstract: In this article two IGBT/FWD chip sets for 1200V applications are introduced. A device with


    Original     		PDF

    HIP5500IP

    Abstract: No abstract text available
    Text: HIP5500 33 ADVANCE INFORMATION High Voltage 1C Half Bridge Gate Driver May1992 Features Description • 500V Maximum Rating The HIP5500 is a high voltage integrated circuit HVIC half-bridge gate driver for standard power MOSFETs, IGBTs, and the new Harris Buffered MOSFETs. It can be employed in a wide variety of


    OCR Scan     		y1992 300KHz HIP5500 HIP5500 2000pF 200pF 200pF 100ns, 2000pF, HIP5500IP PDF

    MT29VZZZAD8DQKSM-053 W ES.9D8

    Abstract: No abstract text available
    Text: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.


    OCR Scan     		IRGCH30SE IRGCH30SE 250pA, 250pA MT29VZZZAD8DQKSM-053 W ES.9D8 PDF

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS PDF