Untitled
Abstract: No abstract text available
Text: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM SST34HF162x / SST34HF164x SST31VF201 / 401 / 8012Mb/4Mb/8Mb Flash x16 + 1MbSRAM (x16) ComboMemories Preliminary Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent
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SST34HF162x
SST34HF164x
SST31VF201
8012Mb/4Mb/8Mb
SST34HF16x1:
12Mbit
SST34HF16x2:
48ba-LFBGA-L3K-6x8-450mic-ILL
MO-210,
48-BALL
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Untitled
Abstract: No abstract text available
Text: TGF2040 400um Discrete GaAs pHEMT Applications • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 20 GHz
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TGF2040
400um
TGF2040
400-Micron
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L850-40T52 Φ5 STEM TYPE LED LAMP L850-40T52 stem type LED L850-40T52 is AlGaAs LED mounted on TO-18 stem and hermetically sealed with flat glass can. On forward bias it emits a spectral band of radiation, which peaks at 850nm.
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L850-40T52
L850-40T52
850nm.
400micron
850nm
J-6512.
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ATF-58143
Abstract: GRH708 GRM40 LL2012-F ATF10236
Text: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Agilent Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the
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ATF-58143
5988-9119EN
GRH708
GRM40
LL2012-F
ATF10236
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Untitled
Abstract: No abstract text available
Text: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM SST34HF162x / SST34HF164x SST31VF201 / 401 / 8012Mb/4Mb/8Mb Flash x16 + 1MbSRAM (x16) ComboMemories Preliminary Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent
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Original
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PDF
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SST34HF162x
SST34HF164x
SST31VF201
8012Mb/4Mb/8Mb
SST34HF16x1:
12Mbit
SST34HF16x2:
48ba-LFBGA-L3K-6x8-450mic-ILL
MO-210,
48-BALL
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ATF-58143
Abstract: GRH708 ATF58143 LL2012-F
Text: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Avago Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the UHF through
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ATF-58143
ATF-10236
5988-9119EN
GRH708
ATF58143
LL2012-F
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L940-40D52 Φ5 STEM TYPE LED LAMP L940-40D52 Stem type LED L940-40D52 is GaAs LED mounted on TO-18 stem and hermetically sealed with flat glass lens. On forward bias it emits a spectral band of radiation, which peaks at 940nm.
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L940-40D52
L940-40D52
940nm.
400micron
940nm
J-6512.
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L870-40T52 Φ5 STEM TYPE LED LAMP L870-40T52 stem type LED L870-40T52 is AlGaAs LED mounted on TO-18 stem and hermetically sealed with flat glass can. On forward bias it emits a spectral band of radiation, which peaks at 870nm.
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L870-40T52
L870-40T52
870nm.
400micron
870nm
J-6512.
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agilent pHEMT transistor
Abstract: Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-55143 ATF-551M4 advanced design system
Text: Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used
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ATF-55143
ATF-55143
5988-9555EN
agilent pHEMT transistor
Curtice
transistor ajw
agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
ATF-54143
AN-1222
ATF55143
ATF-551M4
advanced design system
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Untitled
Abstract: No abstract text available
Text: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 SST34HF1621/ 164116 Mb CSF x16 + 2/4 Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation
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SST34HF1621
SST34HF1641
SST34HF1621/
56-BALL
S71172-05-000
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L-07C1N8ST
Abstract: atf55143 fet curtice nonlinear model ATF-55143 sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
Text: ATF-55143 Low Noise 2300 MHz Amplifier Application Note 5294 Introduction Description A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure
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ATF-55143
ATF-55143
AV01-0376EN
L-07C1N8ST
atf55143
fet curtice nonlinear model
sdars
AN-1222
ATF-551M4
ATF pHEMT
250R07C8R2FV4T
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Untitled
Abstract: No abstract text available
Text: TGF2040 400um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz
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TGF2040
400um
TGF2040
400-Micron
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L940-40T52 Φ5 STEM TYPE LED LAMP L940-40T52 stem type LED L940-40T52 is AlGaAs LED mounted on TO-18 stem and hermetically sealed with flat glass can. On forward bias it emits a spectral band of radiation, which peaks at 940nm.
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Original
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PDF
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L940-40T52
L940-40T52
940nm.
400micron
940nm
J-6512.
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L940-40D42
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE LED LAMP L940-40D42 PRELIMINARY L940-40D42 Stem type LED L940-40D42 is GaAs LED mounted on TO-18 stem and hermetically sealed with unspherical glass lens. On forward bias it emits a spectral band of radiation, which peaks at 940nm.
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L940-40D42
L940-40D42
940nm.
400micron
940nm
J-6512.
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SST34HF1621
Abstract: SST34HF1641
Text: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 SST34HF1621/ 164116 Mb CSF x16 + 2/4 Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation
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SST34HF1621
SST34HF1641
SST34HF1621/
56-BALL
S71172-05-000
SST34HF1641
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ATF54143
Abstract: ATF-10236 ATF-54143 ATF-55143 ATF10236 ATF-641 Using the ATF-10236 in Low noise
Text: A Low Noise High Intercept Point Amplifier for 900 MHz Applications using ATF-54143 PHEMT Application Note 1299 1. Introduction The Avago Technologies ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through
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ATF-54143
ATF-10236
5988-6670EN
ATF54143
ATF-55143
ATF10236
ATF-641
Using the ATF-10236 in Low noise
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transistor ajw
Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143
Text: ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high
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ATF-55143
ATF-55143
AN-1281:
ATF-54143
5988-9555EN
transistor ajw
ATF55143
Curtice
AN-1222
ATF-551M4
ATF-5X143
55143
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SST34HF1621
Abstract: SST34HF1641
Text: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 SST3 4HF16 21/ 164 116 Mb CSF x1 6 + 2Mb / 4Mb SRAM (x8/x16 ) MCP Co mboMe morie s Data Sheet FEATURES: • Block-Erase Capability – Uniform 32 KWord blocks • Read Access Time
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SST34HF1621
SST34HF1641
4HF16
x8/x16
56-lfbga-L1P-8x10-450mic-3
MO-210,
SST34HF1641
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Untitled
Abstract: No abstract text available
Text: TGF2040 400um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz
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TGF2040
400um
TGF2040
400-Micron
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