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    SEMIKRON SKM 400 GB 128 D

    Igbt Module, 1.2Kv, 565A, Semitrans 3; Continuous Collector Current:520A; Collector Emitter Saturation Voltage:2.35V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM 400 GB 128 D
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    400GB128D Datasheets Context Search

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    400gb128d

    Abstract: skm400gal128d SKM400GAR128D 400g
    Text: SKM 400GB128D.   - ."      ' Absolute Maximum Ratings Symbol Conditions IGBT  /  )- . % /  1-* . %45 1)*  -#- &   2* . 3* & #* & 7 )*  1* ;   )- . =>* &   2* . )#* & #* & /  1-* . )22* &   )- .


    Original     		PDF 400GB128D. 400GB128D 400GAL128D 400GAR128D 400gb128d skm400gal128d SKM400GAR128D 400g

    Untitled

    Abstract: No abstract text available
    Text: SKM 400GB128D. Absolute Maximum Ratings Symbol Conditions IGBT  % %56 7  9" 1 3     - 12*3 .   /  :5&%:; <   SPT IGBT Module Units /)* -#- 14*3 #* 8 )*  4* = > /-* 1/)-3  & &  . 4*  @A* 1)#*3 #* & & )A* & @A* 1)#*3


    Original     		PDF 400GB128D. 400GB128D 400GAL128D 400GAR128D

    SKM400GB128D

    Abstract: IGBT SKM 400GB128D switching diode
    Text: SKM 400GB128D. Absolute Maximum Ratings Symbol Conditions IGBT  % %56 7  9" 1 3     - 12*3 .   /  :5&%:; <   SPT IGBT Module Units /)* -#- 14*3 #* 8 )*  4* = > /-* 1/)-3  & &  . 4*  @A* 1)#*3 #* & & )A* & @A* 1)#*3


    Original     		PDF 400GB128D. 400GB128D 400GAL128D 400GAR128D SKM400GB128D IGBT SKM 400GB128D switching diode

    400GB

    Abstract: No abstract text available
    Text: SKM 400GB128D Absolute Maximum Ratings Symbol Conditions IGBT  % %56 8  :" 1 3   SEMITRANSTM 3 SPT IGBT Module SKM 400GB128D Preliminary Data Features                          


    Original     		PDF 400GB128D 400GB

    SKM400GAL128D

    Abstract: SKM400GAR128D
    Text: SKM 400GB128D.   - ."      ' Absolute Maximum Ratings Symbol Conditions IGBT  /  )- . % /  1-* . %45 1)*  -#- &   2* . 3* & #* & 7 )*  1* ;   )- . =>* &   2* . )#* & #* & /  1-* . )22* &   )- .


    Original     		PDF 400GB128D. 400GB128D 400GAL128D 400GAR128D SKM400GAL128D SKM400GAR128D

    400gb128d

    Abstract: SKM400GB128D
    Text: SKM 400GB128D Absolute Maximum Ratings Symbol Conditions IGBT  % %56 8  :" 1 3   SEMITRANSTM 3 SPT IGBT Module SKM 400GB128D Preliminary Data Features                          


    Original     		PDF 400GB128D 400gb128d SKM400GB128D

    Untitled

    Abstract: No abstract text available
    Text: SKM 400GB128D. Absolute Maximum Ratings Symbol Conditions IGBT  % %56 7  9" 1 3     - 12*3 .   /  :5&%:; <   SPT IGBT Module Units /)* -#- 14*3 #* 8 )*  4* = > /-* 1/)-3  & &  . 4*  @A* 1)#*3 #* & & )A* & @A* 1)#*3


    Original     		PDF 400GB128D. 400GB128D 400GAL128D 400GAR128D

    Untitled

    Abstract: No abstract text available
    Text: SKM 400GB128D.   - ."      ' Absolute Maximum Ratings Symbol Conditions IGBT  /  )- . % /  1-* . %45 1)*  -#- &   2* . 3* & #* & 7 )*  1* ;   )- . =>* &   2* . )#* & #* & /  1-* . )22* &   )- .


    Original     		PDF 400GB128D. 400GB128D 400GAL128D 400GAR128D

    skm400gb128d

    Abstract: No abstract text available
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Symbol Conditions IGBT  % %67 :  <" 2 4   SEMITRANSTM 3 SPT IGBT Module SKM 400GB128D Preliminary Data Features                          


    Original     		PDF 400GB128D skm400gb128d

    Untitled

    Abstract: No abstract text available
    Text: SKM 400 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C


    Original     		PDF

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c

    semikron IGBT

    Abstract: semikron IGBT 100A CALCULATION SemiSel The field stop IGBT FS IGBT 400GB128D cal-hd IGBT inverter calculation igbt high frequency 1200V calculation of switching frequency of igbt inverter IGBT, PASSIVATION
    Text: Modern IGBT-FWD chip sets for 1200V applications J. Li, R. Herzer, R. Annacker, B. Koenig Semikron Elektronik GmbH, Sigmundstr. 200, 90431 Nuremberg, Germany Tel. +49.911.6559.159 Fax: +49.911.6559.293 E-mail: li.yi@semikron.com Topics: Motor drive components


    Original     		PDF 400GB128D 600GB126D semikron IGBT semikron IGBT 100A CALCULATION SemiSel The field stop IGBT FS IGBT 400GB128D cal-hd IGBT inverter calculation igbt high frequency 1200V calculation of switching frequency of igbt inverter IGBT, PASSIVATION