Module
Abstract: FM400HB1D5C
Text: SEMICONDUCTOR FM400HB1D5C TECHNICAL DATA 150V / 400A 2 - PACK MOSFET MODULE Half - Bridge FEATURES ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Motor control ・Battery management system OUTLINE DRAWING
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FM400HB1D5C
Module
FM400HB1D5C
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Module
Abstract: 2-PACK FM400CD1D5C
Text: SEMICONDUCTOR FM400CD1D5C TECHNICAL DATA 150V / 400A 2-PACK MOSFET MODULE Common-Drain FEATURES ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Battery Management System ・Electric Vehicle, Automotive etc.
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FM400CD1D5C
Module
2-PACK
FM400CD1D5C
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2-PACK
Abstract: FMMT312
Text: SEMICONDUCTOR FMMT312 TECHNICAL DATA 150V/400A 2-PACK MOSFET MODULE Half - Bridge ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Motor Control ・Electric Vehicle, Automotive etc. INTERNAL CIRCUIT OUTLINE
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FMMT312
50V/400A
100us
2-PACK
FMMT312
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Untitled
Abstract: No abstract text available
Text: 70-W206NBA400SA-M786L flowBOOST 4w 600V/400A Features FlowSCREW 4w ● Symmetrical Booster ● Integrated DC-capacitor ● Low DC Inductance <5nH ● Transient Interface for optional regeneration of switching losses ● Temperature Sensor Target Applications
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70-W206NBA400SA-M786L
00V/400A
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DCM flyback transfer function
Abstract: "Application Note" and FAN400A sot-26 pwm controller Green-Mode PWM Controller sot-26 AN-400A FAN400A PWM controller sot-26 totempole driver SOT26 PWM pwm drive optocoupler high side MOSFET Gate Drive
Text: www.fairchildsemi.com AN-400A Low-Power Green-Mode PWM Flyback Power Controller without Secondary Feedback Abstract This highly integrated PWM controller, FAN400A, offers several features to enhance the performance of a flyback converter for low-power applications. Using the controller
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AN-400A
FAN400A,
200mW
OT-26
DCM flyback transfer function
"Application Note" and FAN400A
sot-26 pwm controller
Green-Mode PWM Controller sot-26
AN-400A
FAN400A
PWM controller sot-26
totempole driver
SOT26 PWM
pwm drive optocoupler high side MOSFET Gate Drive
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Untitled
Abstract: No abstract text available
Text: 70-W624N3A320SH-M400F preliminary datasheet NPC Application flowNPC 4w 2400V/400A General conditions VGEon BUCK = 15 V VGEoff Rgon Rgoff = = = -15 V 1Ω 1Ω Vout= 288 VAC Figure 1. BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 1Ω 1Ω Figure 2. Buck MOSFET
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70-W624N3A320SH-M400F
400V/400A
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IXGQ150N33TC
Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
Text: IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30
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IXGA150N33TC
IXGQ150N33TC
IXGQ150N33TCD1
150N33TC
150N33TCD1
O-263
150N33TC
9-04-08-B
IXGQ150N33TC
IXGQ150N33TCD1
siemens igbt 75a
IXGA150N33TC
g150n
IXGA150
IXGQ150
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT MMIX1G320N60B3 Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1G320N60B3
IC110
320N60B3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1G320N60B3
IC110
320N60B3
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Untitled
Abstract: No abstract text available
Text: BUK454-400A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)30 I(D) Max. (A)4.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)
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BUK454-400A
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Untitled
Abstract: No abstract text available
Text: GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300
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IXGK400N30A3
IXGX400N30A3
10kHz
O-264
IC110
400N30A3
1-18-08-A
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Untitled
Abstract: No abstract text available
Text: GenX3TM 300V IGBTs VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-Low Vsat PT IGBTs for up to 10kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGK400N30A3
IXGX400N30A3
10kHz
O-264
IC110
400N30A3
1-18-08-A
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IXGN400N30A3
Abstract: Aluminium nitride
Text: IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching VCES = 300V IC25 = 400A VCE sat ≤ 1.15V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN400N30A3
10kHz
OT-227B,
E153432
IC110
400N30A3
1-18-08-A
IXGN400N30A3
Aluminium nitride
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IXGN400N60A3
Abstract: No abstract text available
Text: IXGN400N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN400N60A3
OT-227B,
E153432
IC110
400N60A3
7-10-08-C
IXGN400N60A3
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Untitled
Abstract: No abstract text available
Text: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN400N30A3
10kHz
OT-227B,
E153432
IC110
400N30A3
1-18-08-A
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IXGX400N30A3
Abstract: IXGK400N30A3 PLUS247 ixgx400
Text: IXGK400N30A3 IXGX400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300
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IXGK400N30A3
IXGX400N30A3
10kHz
O-264
IC110
400N30A3
1-18-08-A
IXGX400N30A3
IXGK400N30A3
PLUS247
ixgx400
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MMIX1G320N60B3
Abstract: 320N60B3 siemens ic igbt 300V 400A
Text: Advance Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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MMIX1G320N60B3
IC110
320N60B3
MMIX1G320N60B3
siemens ic
igbt 300V 400A
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IXGN400N60A3
Abstract: No abstract text available
Text: GenX3TM 600V IGBT IXGN400N60A3 VCES = 600V IC25 = 400A VCE sat ≤ 1.25V Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous
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IXGN400N60A3
OT-227B,
E153432
IC110
400N60A3
7-10-08-C
IXGN400N60A3
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IXGN400N60A3
Abstract: 400N30A3 IXGN400N30A3
Text: IXGN400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra Low Vsat PT IGBT for up to 10kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN400N30A3
10kHz
OT-227B,
E153432
IC110
400N30A3
1-18-08-A
IXGN400N60A3
IXGN400N30A3
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Untitled
Abstract: No abstract text available
Text: VCES = 600V IC25 = 400A VCE sat ≤ 1.25V IXGN400N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGN400N60A3
OT-227B,
E153432
IC110
400N60A3
7-10-08-C
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IRGDDN400M06
Abstract: c454 INTAPAK package mosfet 400a
Text: International ^Rectifier Provisional Data Sheet PD-9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 400A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses
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IRGDDN400M06
IRGRDN400M06
Outline13
C-454
GG2Q244
c454
INTAPAK package
mosfet 400a
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IRGDDN400K06
Abstract: power diode 400A VQE 11 400A mosfet vqe 13
Text: Provisional Data Sheet PD-9.1196 bitemational ïôHRectifier IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE= 600V lc = 400A •Rugged Design •Sim ple gate-drive .Switching-Loss Rating includes all ‘tail" losses
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IRGDDN400K06
IRGRDN400K06
power diode 400A
VQE 11
400A mosfet
vqe 13
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mosfet ir 840
Abstract: irgddn400k06 OF IGBT 300A 500V 400A mosfet
Text: International g ! Rectifier Provisional Data Sheet PD-9.1196 IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE = 600V lc = 400A • Rugged Design .Simple gate-drive •Switching-Loss Rating includes all "tail" losses
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IRGDDN400K06
IRGRDN400K06
C-1014
mosfet ir 840
OF IGBT 300A 500V
400A mosfet
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IRGDDN400M12
Abstract: BVOE 18 mosfet 400a 400A mosfet C-561
Text: Provisional Data Sheet PD-9.1204 In ternational ï « r ]R e c tifie r IRGDDN400M12 IRGRDN400M12 "SINGLE SWITCH“ IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 400A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"
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IRGDDN400M12
irgrdn400M12
C-562
55M52
BVOE 18
mosfet 400a
400A mosfet
C-561
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