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    4 WG 130 Price and Stock

    Lattice Semiconductor Corporation LCMXO3LF-1300E-5UWG36ITR

    FPGA - Field Programmable Gate Array 1280 LUTs
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    Mouser Electronics LCMXO3LF-1300E-5UWG36ITR 7,917
    • 1 $4.75
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    Lattice Semiconductor Corporation LCMXO3L-1300E-5UWG36ITR1K

    FPGA - Field Programmable Gate Array MachXO3, 1280 LUTs 1.2V
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    Mouser Electronics LCMXO3L-1300E-5UWG36ITR1K 1,899
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    Lattice Semiconductor Corporation LCMXO3LF-1300E-5UWG36CTR1K

    FPGA - Field Programmable Gate Array 1280 LUTs
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    Mouser Electronics LCMXO3LF-1300E-5UWG36CTR1K 1,091
    • 1 $5.6
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    Lattice Semiconductor Corporation LCMXO3LF-1300E-5UWG36ITR1K

    FPGA - Field Programmable Gate Array 1280 LUTs
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    Mouser Electronics LCMXO3LF-1300E-5UWG36ITR1K 940
    • 1 $5.6
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    Lattice Semiconductor Corporation LCMXO3L-1300E-5UWG36CTR1K

    FPGA - Field Programmable Gate Array MachXO3, 1280 LUTs 1.2V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LCMXO3L-1300E-5UWG36CTR1K 887
    • 1 $4.95
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    4 WG 130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L to Ku Band Low Noise GaAs MESFET

    Abstract: NE71383B NE71383
    Text: L to Ku Band Low Noise NE71383B N-Channel GaAs MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES 2.5 • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: WG = 280 µm


    Original     		PDF NE71383B NE71383B 24-Hour L to Ku Band Low Noise GaAs MESFET NE71383

    C10535E

    Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION


    Original     		PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] C10535E NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B

    0419 11 1301 00 schrack

    Abstract: relay 1201
    Text: General Purpose Relays Rast 5 Power Relay 419 11 EA/. Q 2 pole 16 A Q Safety mains insulation Q Quick connect terminals 6.3 x 0.8 mm Q Contact gap > 3 mm Q 4 kV / 8 mm coil-contact Q Snap or screw mounting Q WG version: Product in accordance to IEC60335-1


    Original     		PDF IEC60335-1 2002/95/EC) F0255-BI of5064 E214024 0419 11 1301 00 schrack relay 1201

    30374

    Abstract: NE76038 NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour 30374 NE76038-T1

    5570

    Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package


    Original     		PDF NE34018 NE34018-T1 NE34018-T2 5570 C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08

    g2ns

    Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
    Text: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold


    Original     		PDF NE72118 NE72118) g2ns C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421

    C10535E

    Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
    Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package


    Original     		PDF NE72218 NE72218-T1 NE72218-T2 C10535E NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58

    ne72218 v58

    Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3
    Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 µm recessed gate • Gate Width : Wg = 400 µm • 4-pin super minimold • Tape & reel packaging only available


    Original     		PDF NE72218 NE72218-T1 NE72218-T2 ne72218 v58 NE72218 NE72218-T1 NE72218-T2 VP15-00-3

    62734

    Abstract: No abstract text available
    Text: DO NOT S C A L E METRIC DI ME NS IO NS IN INCH THIRD ANGLE PROJECTION WIRE RANGE : O, 8—2, 0mm2 0 8-14 A WG INSULATION RANGE : 3,30 - 4 , 4 5 C. 130-. 1752 DIA,_ 4, 07 •- 1 5 8 ^ VIEW A-A 2, 92 C. 7 15; 3,30 . 130)J - 8 , 74C. 344) 1 D 3 .68 a M 5 >


    OCR Scan     		PDF EH-03 H-10024 C-62734 62734

    SIA 6822

    Abstract: No abstract text available
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET FEATURES NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz m 2, < CD HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz GATE WIDTH: Wg = 280


    OCR Scan     		PDF NE71383B NE71383B SIA 6822

    z 0607

    Abstract: No abstract text available
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: Wg = 280 \im


    OCR Scan     		PDF NE71383B NE71383B NE71300L NE71383 24-Hour z 0607

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0014=12^ 604 « S M Ù K PRELIMINARY KM M5322000W/WG DRAM MODULES 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5322000W is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M5322000W/WG KMM5322000W 42-pin 72-pin 22/iF KMM5322000W-7 M5322000W-10 KMM5322000W-8 150ns

    NEC D 809 F

    Abstract: NEC D 809 71383B NEC D 809 k
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm


    OCR Scan     		PDF NE713 NE71300-N NE71300-M NE71300-L NE71383B NE71383B] NE71300] NEC D 809 F NEC D 809 71383B NEC D 809 k

    sg 6822

    Abstract: ne71383B sg 8841 ku-band oscillator D 1307
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ a tf = 12 GHz m • HIGH ASSOCIATED GAIN: < 5 14 dB typ at f = 4 GHz ro • GATE WIDTH: Wg = 280 jim


    OCR Scan     		PDF NE71383B NE71383B NE71300L 24-Hour sg 6822 sg 8841 ku-band oscillator D 1307

    hughes

    Abstract: No abstract text available
    Text: □ WG SIZE B DASH ND -1 -2 -3 -4 -5 ASSEMBLE A CABLE PER ACCOMMODATED DÍM HUGHES 720413-1 CDAX ,142 HUGHES 720412-1 (CDAX) ,110 HUGHES 710923-1 (TRIAX SHEET 3 ,115 M17/113-RG316 (CDAX) ,108 HUGHES 735499-1 (CDAX) .187 DATA CONTAINED IN THIS DOCUMENT IS


    OCR Scan     		PDF M17/113-RG316 750-32UN-2A hughes

    AM/SSC 9500 ic data

    Abstract: No abstract text available
    Text: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •


    OCR Scan     		PDF NE72218 NE72218-T1 NE72218-T2 VP15-00-3 WS60-00-1 P12750EJ2V0D AM/SSC 9500 ic data

    SG 2368

    Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
    Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 • GATE WIDTH: Wg = 330 jim • 4 PINS SUPER MINI MOLD


    OCR Scan     		PDF NE72118 NE72118 24-Hour SG 2368 sg 2534 DELTA 0431 180/TTK SG 2368

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns


    OCR Scan     		PDF KM536512W/WG 512KX36 KMM536512W-6 110ns 130ns KMM536512W-8 150ns KMM536512W KMM536512WG:

    CA51 capacitor

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5321200W/WG Fast Page Mode 1 Mx32 DRAM SIM M , 1K Refresh , 5V Using 1M x16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM 5321200W is a 1M bit x 32 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5321200W/WG 321200W 72-pin KMM5321200W 130ns 150ns 415C1200J CA51 capacitor

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b?E D • 7 ^ 4 1 4 2 0D1521S 021 ■ SFIGK KM M532512W/WG DRAM MODULES 512Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532512W is a 512K bit x 32 Dynam­ ic RAM high density memory module. The Samsung


    OCR Scan     		PDF 0D1521S M532512W/WG 512Kx32 KMM532512W 256KX16 40-pin 72-pin 22/iF 110ns

    D01471

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung


    OCR Scan     		PDF M536256W/WG 256Kx36 KMM536256W M536256W 40-pin 72-pin 22fiF KMM536256W-7 130ns KMM536256W-8 D01471

    NE76038

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND Ga As MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 3.5 21 Ga 18 3 Lg = 0.3 im, Wg = 280 )im


    OCR Scan     		PDF NE76038 NE76038 NE76038-T1 24-Hour

    TUD22

    Abstract: No abstract text available
    Text: 4 THIS DRAWINO IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION flV AMP INCORPORATED. COPYRIGHT 13 , 19 LOC G ALL RIGHTS RESERVED. REVISIONS DIST 14 LTR H DESCRIPTION DATE REV / 0720-0977-96 3JUN96 DWN APVD ME BB D D LR71ââ W IR E BODY ^ L ^ ) RAN G E 2 2 -1 G A WG


    OCR Scan     		PDF 3JUN96 MIL-T-7928 M1L-T-10727 09HAY94 /4MP10398 DWG7732 TUD22

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138