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    3N165 Search Results

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    3N165 Price and Stock

    Vishay Sfernice RSK33N165KF165KD

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    DigiKey RSK33N165KF165KD Tray 100
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    SiTime Corporation SIT1408BC-13-33N-16.500000E

    OSCILLATOR, SIT1408, -20 to 70C, 2520, 50ppm, 3.3V, 16.5MHz, OE, 1k pcs T&R 8 mm - Tape and Reel (Alt: SIT1408BC-13-33N-1)
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    Avnet Americas SIT1408BC-13-33N-16.500000E Reel 12 Weeks 1,000
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    SiTime Corporation SIT1408BC-13-33N-16.500000G

    OSCILLATOR, SIT1408, -20 to 70C, 2520, 50ppm, 3.3V, 16.5MHz, OE, 250 pcs T&R 8 mm - Tape and Reel (Alt: SIT1408BC-13-33N-1)
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    Avnet Americas SIT1408BC-13-33N-16.500000G Reel 12 Weeks 250
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    SiTime Corporation SIT1408BI-23-33N-16.588800G

    OSCILLATOR, SIT1408, -40 to 85C, 3225, 50ppm, 3.3V, 16.5888MHz, OE, Default - Tape and Reel (Alt: SIT1408BI-23-33N-1)
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    Avnet Americas SIT1408BI-23-33N-16.588800G Reel 12 Weeks 250
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    Vishay Intertechnologies RSK33N165KF165KD

    Voltage Divider, 165 kOhm, 165 kOhm, 1:1, ± 25 ppm/°C, 3-Pin, Surface Mount - Waffle Pack (Alt: RSK33N165KF165KD)
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    Avnet Americas RSK33N165KF165KD Waffle Pack 23 Weeks 100
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    • 1000 $5.12709
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    3N165 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    3N165 Calogic Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Original PDF
    3N165 Linear Integrated Systems MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    3N165 Calogic Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Scan PDF
    3N165 General Instrument Short Form Data 1976 Short Form PDF
    3N165 Intersil Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. Scan PDF
    3N165 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N165 Intersil Data Book 1981 Scan PDF
    3N165 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N165 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N165 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N165 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N165 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N165-6 Linear Integrated Systems MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    3N165 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE 3N165, LS3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)


    Original     		PDF LS/3N165, LS/3N166 LS3N165, LS3N166 3N165, 3N166 3N165 25-year-old, 3N165

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		PDF 3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor

    3N165

    Abstract: 3N166
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		PDF 3N165, 3N166 3N165 300ms. 3N165 3N166

    3N165

    Abstract: 3N166 3N170 X3N165-66
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)


    Original     		PDF 3N165 3N166 3N165. 3N166. 100MHz 3N165 -55oC 3N170 300ms. DS018 3N166 X3N165-66

    Untitled

    Abstract: No abstract text available
    Text: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE 3N165, LS3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)


    Original     		PDF LS/3N165, LS/3N166 LS3N165, LS3N166 3N165, 3N166 3N165 25-year-old, 3N165

    Untitled

    Abstract: No abstract text available
    Text: 3N165 P-CHANNEL MOSFET The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C unless otherwise noted Maximum Temperatures The hermetically sealed TO-78 package is well suited


    Original     		PDF 3N165 3N165 300mW

    M116 CALOGIC

    Abstract: No abstract text available
    Text: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs t h r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300


    Original     		PDF 3N163 3N164 3N165 3N166 3N170 3N171 3N172 3N173 3N190 3N191 M116 CALOGIC

    3N166

    Abstract: 3N165 3N170 73Package
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)


    Original     		PDF 3N165 3N166 3N165. 3N166. -10mA, 100MHz 3N165 -55oC 3N170 3N166 73Package

    2N4250

    Abstract: 2N3565 IC LM331 2n3565 equivalent transistor CURRENT-TO-FREQUENCY 2N3565 pin pico amp meter lm331 IC LM331 cost of the ic 1N484
    Text: Does an analog-to-digital converter cost you a lot if you need many bits of accuracy and dynamic range? Absolute accuracy better than 0.1% is likely to be expensive. But a capability for wide dynamic range can be quite inexpensive. Voltage-to-frequency V-to-F converters are becoming


    Original     		PDF an005622 2N4250 2N3565 IC LM331 2n3565 equivalent transistor CURRENT-TO-FREQUENCY 2N3565 pin pico amp meter lm331 IC LM331 cost of the ic 1N484

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


    Original     		PDF IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement"

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		PDF LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Text: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		PDF LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A

    "DUAL N-Channel JFET"

    Abstract: ultra low igss pA J176 equivalent
    Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF U/SST440 U/SST440 U/SST441 500mW "DUAL N-Channel JFET" ultra low igss pA J176 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 3N165. 3N166 LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA- 25°C unless otherwise noted)


    OCR Scan     		PDF 3N165 3N166 3N165. 3N166 300ms.

    Untitled

    Abstract: No abstract text available
    Text: _| _ CQIOQIv Monolithic Dual P-Channel Enhancement Mode MOSFET M . General Purpose Amplifier ^ CORPORATION \ j 3N165/3N166 FEATURES A B S O L U T E M A X IM U M R A T IN G S Note 1 (Ta = 25°C unless otherwise specified) • V ery H igh Im pedan ce • H igh G ate B re ak d o w n


    OCR Scan     		PDF 3N165/3N166 3N165 3N166 -10mA, 100MHz -500fiA 3N170 300ms.

    3N166

    Abstract: 3N165 3N170
    Text: 3N165, 3N166 Dual P-Channel Enhancem ent Mode _ MOS FET FEATURES • V ery High In put Impedance • High Gate Breakdown • Low Capacitance MAXIMUM RATINGS @ V gss Vqss (1 V qss V Gos Vqq Vq lD PD Tj T jtg Tl PIN CONFIGURATION 2 5 “C am bient unless noted)


    OCR Scan     		PDF 3N170 -10mA, 100MHz 3N165 -1500mA, -500/jA -500mA 3N166 3N165

    3N165

    Abstract: 3N166
    Text: G E SOLI» STATE □1 D E|3 fl7 S D fll T - GDI I d 17 3N165, 3N166 3N165, 3N166 Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Impedance • High Gate Breakdown Drain-Source or Drain-Gate Voltage Note 2


    OCR Scan     		PDF 3N165, 3N166 307SDÃ 3N165 -500HA 3N170 300ms. 3N165 3N166

    Untitled

    Abstract: No abstract text available
    Text: 3N165. 3N166. LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (Ta= 25°C unless otherwise noted)


    OCR Scan     		PDF 3N165 3N166 3N165. 3N166. 300ms.

    Untitled

    Abstract: No abstract text available
    Text: 3N165. 3N166 LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IM PEDANCE HIGH GATE BREAKDOW N ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM R ATING S NQTÇ 1 (Ta= 25°C unless otherwise noted)


    OCR Scan     		PDF 3N165 3N166 3N165. 3N166 300ms.

    Untitled

    Abstract: No abstract text available
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET _ , _ _ . General Purpose Amplifier — C Q I O Q I C CORPORATION 3N165/3N166 A B S O L U T E M A X IM U M R A T IN G S N o t e l (T a = 2 5 °C unless otherwise specified) F E A TU R E S • V ery H ig h Im p e d a n c e


    OCR Scan     		PDF 3N165/3N166 -10mA, 100MHz 3N165 -500nA, 3N170 300ms. 0000T4G

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    3N165

    Abstract: 3N166
    Text: ^Ælitron [F>ßä E m J T r ©MMMi P -C H A N N E L E N H A N C E M E N T DUAL M O S FET Devices. Inc. CHIP IMUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .035" 0.889mm) It is advisable that:


    OCR Scan     		PDF 889mm) 0254mm) -10mA, --10V 10niA 3N165 3N166