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    3MM PHOTO TRANSISTOR Search Results

    3MM PHOTO TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    3MM PHOTO TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor


    Original     		PDF KDT3002A KDT3002A

    Untitled

    Abstract: No abstract text available
    Text: AU K CORP. Photo Transistor KDT3001A Description The KDT3001A is a high-sensitivity NPN silicon phototransistor mounted in 3mm T-1 all plastic mold type. Pin Connection 1. Emitter 2. Collector Features 3mm(T-1) all plastic mold type Colorless transparency lens


    Original     		PDF KDT3001A KDT3001A 000lux,

    mouse Phototransistor

    Abstract: visible phototransistor kst-312
    Text: AUK CORP. Photo Transistor KST-312 Description The KST-312 is a high-sensitivity silicon phototransistor with two-phaseoutput. this phototransistor is compact, and the best for the mouse. Features Thickness : 3mm Visible light cut-off type Bult-in 2ch phototransistor


    Original     		PDF KST-312 KST-312 100uA mouse Phototransistor visible phototransistor

    nj TRANSISTOR

    Abstract: 450KW
    Text: 3mm Silicon PNP Photo Transistor Dialight 551-7610 1.57 [.062] 4.32 [.170] 7.11 .280 Features 6.35 [.250] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability 3.00 [.118] DIA. 5.08 [.200]


    Original     		PDF MIL-STD-202E, nj TRANSISTOR 450KW

    IS654A

    Abstract: IS655A
    Text: IS654A IS655A 3mm DIA. MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 4.0 DESCRIPTION The IS654A Gallium Arsenide Emitting Diode and the IS655A ( NPN Silicon Photo Transistor ) are a mechanically and spectrally matched emitter detector end looking pair.


    Original     		PDF IS654A IS655A DB92102-AAS/A2 IS654A IS655A

    nj TRANSISTOR

    Abstract: No abstract text available
    Text: NEW 3mm Infrared Discrete LED Silicon PNP Photo Transistor Dialight 521-9740 Features 5.18 [.204] 4.09 [.161] .79 [.031] .61 [.024] SQ. .71 [.028] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability


    Original     		PDF MIL-STD-202E, nj TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: AU K CORP. Photo Transistor KST-312 Description The KST-312 is a high-sensitivity silicon phototransistor with two-phaseoutput. this phototransistor is compact, and the best for the mouse. Features Thickness : 3mm Visible light cut-off type Bult-in 2ch phototransistor


    Original     		PDF KST-312 KST-312 100uA

    Untitled

    Abstract: No abstract text available
    Text: AUK CORP. Photo Transistor KDT3001A Description The KDT3001A is a high-sensitivity NPN silicon phototransistor mounted in Φ 3mm T-1 all plastic mold type. Pin Connection 1. Emitter 2. Collector Features Φ3mm(T-1) all plastic mold type Colorless transparency lens


    Original     		PDF KDT3001A KDT3001A 000lux,

    3MM LED

    Abstract: IR detector transistor 551 IR LED array nj TRANSISTOR green LED 3mm low 3mm "ir led" diode led ir 3mm photo diode LED 3mm 2ma
    Text: Selector Guide: 3mm IR and L E D Products DESCRIPTION DATA SHEET PAGE s 3mm IR Detector Infra Red Emitter 551-7110 4-7 3mm IR Detector Photo Transistor 551-7610 4-8 3mm IR Detector Photo Diode 551-7710 4-9 551-XX01 4-10 & 4-11 551-XX02 4-12 3mm LED CBI (DIN 41494 compatible)


    OCR Scan     		PDF 551-XX01 551-XX02 551-xx03 3MM LED IR detector transistor 551 IR LED array nj TRANSISTOR green LED 3mm low 3mm "ir led" diode led ir 3mm photo diode LED 3mm 2ma

    transistor 551

    Abstract: 3MM LED
    Text: Selector Guide: 3mm IR and LED Products DESCRIPTION DATA SH EET PAGE s 551-7110 4-10 551-7610 4-11 551-7710 4-12 551-xx01 4-13 & 4-14 551-xx02 4-15 3mm Infrared Emitter Em itter .200 from P C B H ousing M ounts on .175 pitch 3mm Silicon PNP Photo Transistor


    OCR Scan     		PDF 551-xx01 551-xx02 3TF-9484 transistor 551 3MM LED

    transistor 0117

    Abstract: MDL82
    Text: MDL82 NPN SILICON PHOTO DARLINGTON TRANSISTOR DESCRIPTION « .9 7 • 0.117 MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. It features ultra high illumination


    OCR Scan     		PDF MDL82 100jtiA 100ohm 6S477 transistor 0117

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION CRO MEL85 NPN SILICON PHOTO TRANSISTOR MEL85 is NPN silicon planar photo­ transistor. It is encapsulated in a 3mm diameter, low profile and flat top type water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time.


    OCR Scan     		PDF MEL85 MEL85 May-99

    h004

    Abstract: MEL708
    Text: CRO MEL708 iNPN SILICON PHOTO TRANSÌSTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.


    OCR Scan     		PDF MEL708 H0-04) MEL708 MEL708-A 1000Q Nov-99 h004

    MEL708

    Abstract: No abstract text available
    Text: CKO / u o NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.


    OCR Scan     		PDF MEL708 100mA 200mW MEL708

    MEL82

    Abstract: MI38T
    Text: CRO MEL82 N PN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 MEL82 is NPN silicon planar photo­ transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / 4*.1 • (0.16) 0.75(0.03)_ max. It features ultra high illumination


    OCR Scan     		PDF MEL82 MI38T 20mW/cm3 100ohm

    MEL708-S

    Abstract: No abstract text available
    Text: CRO DESCRIPTION MEL708-S NPN SILICON PHOTO TRANSISTOR -2.9 0.11 MEL708-S is NPN silicon photo­ transistor with external base connection and built in a standard T-l (3mm) water clear package. T .3(0.16) p —0.5(0.019) —3.1(0.12) 1.0(0.039) A 3 .25 /0 .12)


    OCR Scan     		PDF MEL708-S MEL708-S Jun-1999

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA T P S 6 12 TOSHIBA PHOTO TRANSISTOR • ■ SILICON NPN EPITAXIAL PLANAR MF FOR PHOTO SENSOR U n it in mm $ 3 .0 ± 0.3 PHOTOELECTRIC COUNTER FLOPPY DISK DRIVE POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT 2 - 0 .6 MAX 9}3mm resin package black


    OCR Scan     		PDF TLN113

    Untitled

    Abstract: No abstract text available
    Text: TPS612 T O SH IB A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 2 FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER j2?3-Q £ 0 . 3 FLOPPY DISK DRIVE POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPMENT 2 - 0-6 MAX • • • • ^3mm resin package black


    OCR Scan     		PDF TPS612 TPS61 TLN113 TLN113

    MEL78D

    Abstract: No abstract text available
    Text: MEL78D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL78D is NPN silicon planar phototransistor with 3mm dimeter light 0.124 rejective filter epoxy package. It features ultra high, illumination sensitivity and fast response time. 5*3 (0.21) » . 1.0(0.04)-!


    OCR Scan     		PDF MEL78D CHARACTER260Â 100/xA 100/iA of2354Â

    Untitled

    Abstract: No abstract text available
    Text: CRO MEL78D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL78D transistor rejective features sensitivity «>3 . 15< 0. 12-4> is NPN silicon planar photowith 3mm dimeter light filter epoxy package. It ultra high. illumination and fast response time. 1.0 0.04 >


    OCR Scan     		PDF MEL78D MEL78D 100/xA 100/i

    Untitled

    Abstract: No abstract text available
    Text: mN£EhLEl1C '°LTt SSE1 " "b7aisi 0002021 Db0"IIST 7“^//~ 6 3 PHOTODARLINGTON TRANSISTOR PD306 • FEATURES • • Package Dimensions HIGH DIRECTIVITY LENS 3mm DIA. MOLDED EPOXY TYPE ■ APPLICATION • • PHOTOSENSOR PHOTO SWITCH Absolute Maximum Ratings


    OCR Scan     		PDF PD306

    Untitled

    Abstract: No abstract text available
    Text: CRO MEL708 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon phototransistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.


    OCR Scan     		PDF MEL708 MEL708 100mA 200mW 100/i 2854C

    Untitled

    Abstract: No abstract text available
    Text: IUI I • I U ■ I D ■ I DARLINGTON TRANSISTOR I DESCRIPTION S>2.97<0.117> MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / N \ 4. <0.16 T


    OCR Scan     		PDF MDL82 MEL82) 100ohm MDL82

    MEL78D

    Abstract: No abstract text available
    Text: DESCRIPTION M E L 78D transistor rejective features sensitivity CRO is NPN silicon planar photowith 3mm dim eter light filter epoxy package. It ultra high. illum ination and fast response time. <°-124> n 5.3 • • NPN SILICON PHOTO TRANSISTOR A,ì dimension in mm incb


    OCR Scan     		PDF MEL78D 100itA 100/iA of2354Â