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    3FT TRANSISTOR Search Results

    3FT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3FT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


    Original     		PDF 2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23

    transistor 3bt

    Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW
    Text: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,


    Original     		PDF BC856W BC857W OT-323 100MHz 200Hz BC856BW BC857BW BC856AW transistor 3bt marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor

    transistor 3bt

    Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
    Text: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface


    Original     		PDF BC856W BC857W OT-323 BC857W 200Hz BC856AW BC857AW BC856BW transistor 3bt marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor

    transistor 2sc5386

    Abstract: 2sc5386
    Text: TOSHIBA 2SC5386 TOSHIBA TRANSISTOR i <;r * 3ft & SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV .15.5 + 0.5 HIGH SPEED SWITCHING APPLICATIONS & O VCB0 = 1500V High Voltage Low Saturation Voltage VCE sat = 3V (Max.)


    OCR Scan     		PDF 2SC5386 transistor 2sc5386 2sc5386

    1256C

    Abstract: VN1706B VN1706D VN1706
    Text: • LAE D SILICONIX INC S254735 0014012 A ■ VN1706B, VN1706D G T 'S S ilic ilicoont . ix_ ¡i c o rp o ra te d in N-Channel Enhancement-Mode MOS Transistors T-3ft-os PRODUCT SUMMARY PART NUMBER TO-2Q5AD TO-39 V(BR)DSS ros (ON) (n ) (V) Id (A) PACKAGE


    OCR Scan     		PDF VN1706B O-205AD VN1706D O-220 VNDB24 VN1706B, VN1706D 1256C VN1706

    Untitled

    Abstract: No abstract text available
    Text: 2SJ105 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE i <; 1 1 n s Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS High Breakdown Voltage : VQ£ g = 50V T njroo oo = 1-n ^ A Ì M a v ì' f' V- un oci = 3ft


    OCR Scan     		PDF 2SJ105 2SK330 13RAIN

    BUZ11

    Abstract: BUZ11s2
    Text: SILICÓNIX INC 1ÖE D XKS3& • Ö25M73S 0014505 =1 ■ BUZ11, BUZ11S2 T-3ft -11 N-Channel Enhancement Mode Transistors TQ-220AB TO P VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS BUZ11 BUZ11S2 O •d "■ sr (A 50 0.040 30 60 0.040 30 1 GATE 2 DRAIN (Connected to TAB)


    OCR Scan     		PDF 25M73S BUZ11, BUZ11S2 TQ-220AB BUZ11 2S4735 BUZ11S2

    Transistor BFT 10

    Abstract: transistor 3Ft bux c 651 emetteur 3ft73
    Text: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature


    OCR Scan     		PDF 74sont Transistor BFT 10 transistor 3Ft bux c 651 emetteur 3ft73

    LA4630

    Abstract: la4630n 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 40W stereo amplifier capacitor RG 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC
    Text: Ordering num ber:EN 3227A Monolithic Linear 1C I N0.3227A LA4630N SAXYO 9V/12V 3-Dimension Power IC for Radio Cassette Recorders I Features • Stereo section 9V/3ft 3WX2, 12V/3fl 5WX2: noise filter capacitorless power • Super bus section 9V/3H 6W, 12V/3H 10W: output capacitor, B-S capacitorless power


    OCR Scan     		PDF EN3227A LA4630N V/12V LA4630 la4630n 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12v 40W stereo amplifier capacitor RG 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


    OCR Scan     		PDF 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F

    aeir

    Abstract: 1DI75H-120 M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor
    Text: 1DI75H-120 75a : Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • ¡Ü IÎŒ High Voltage Including Free Wheeling Diode • A SO A '“j2 ;i' Excellent Safe Operating Area Insulated Type IffiiÉ • A p p lic a tio n s • Chopper Controls • D C t-* # ]«


    OCR Scan     		PDF 1DI75H-120 aeir M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor

    transistor b228

    Abstract: transistor Sh 550 2DI240A-055 35-40kgf-cm B-228 LC240A BA rx transistor
    Text: 2Dl24OA-O55 240A >£ • Outline POWER TRANSISTOR MODULE _ a»o : Features • Drawings M) 180 . " "] æ a ' t -a n ¿1 - - H igh V o lta g e In c lu d in g Free W h e e lin g D io d e • ASO E xcellent Safe O p e ra tin g Area • TibiyjM Insu lated Type


    OCR Scan     		PDF 2DI24OA-O55 E82988 transistor b228 transistor Sh 550 2DI240A-055 35-40kgf-cm B-228 LC240A BA rx transistor

    B-457

    Abstract: b457 2DI100Z-140 30S3 T151 T810 SM470 B-459
    Text: 2DI100Z-140 iooa Outline Drawings POWER TRANSISTOR MODULE ’ Features • BüfÆ High Voltage • 7 lJ— 's W tâ —Ki^930c Including Free Wheeling Diode • A SO ^ / av,' Excellent Safe Operating Area Insulated Type • A pplications » Power Switching


    OCR Scan     		PDF 2DI100Z-140 I95t/R89) Shl50 B-457 b457 30S3 T151 T810 SM470 B-459

    zener diode mv 5T

    Abstract: J32C j32-C E82988 sf p151 1DI400MN-120 M118 P151
    Text: 1 D I 4 0 0 M N - 1 2 0 4 0 0 A /< > 7 _ f- v X ^ i : Outline Draw ings a . — JU POWER TRANSISTOR MODULE : j V i ‘T ” .v F e a tu re s • hFE*'”^ ' High DC Current Gain 'i'. ¡5. • ffla fs /,M* : A p p lic a tio n s • tfL R 'f > '< — ? General Purpose Inverter


    OCR Scan     		PDF 1DI400MN-120 E82988 I95t/R89) zener diode mv 5T J32C j32-C sf p151 M118 P151

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency VCEO=300V Cob = 5.0pF Typ. fT =100MHz (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5360 100MHz

    KF 35 transistor

    Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
    Text: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications


    OCR Scan     		PDF D11500-050 E82988 50A///S KF 35 transistor power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500

    power bjt transistor 600v

    Abstract: 6DI20C-050 bjt transistor 600v transistor 104 VCBo-600V fuji bjt fuji bjt 6-pack
    Text: FU JI 6-Pack BJT 600 V 20 A 6DI20C-050 MUM STOSOÊ : Outline Drawings POWER TRANSISTOR MODULE : Features y > 9 ¥ 4 1 — Ff tM • 7 U— • h F E ^ 'iiji' • Including Free Wheeling Diode High DC Current Gain Insulated Type ' A pplica tio ns • DC * —9 U'M


    OCR Scan     		PDF 6DI20C-050 E82988 50//s power bjt transistor 600v 6DI20C-050 bjt transistor 600v transistor 104 VCBo-600V fuji bjt fuji bjt 6-pack

    6DI30A-120

    Abstract: transistor 3Ft transistor and schematic symbols M606 fuji bjt
    Text: 6DI30A-120 FUJI BTD8DE 6-Pack BJT 1200 V 30 A • Outline Drawings POWER TRANSISTOR MODULE I «.I « ^ Features • SW /± EU 0V EV BWEW fïi * EX High Voltage • 7»j — y Krt / f t A C Motor Controls . Air Conditionens t #*14 • Maximum Ratings and Characteristics


    OCR Scan     		PDF 6DI30A-120 6DI30A-120 transistor 3Ft transistor and schematic symbols M606 fuji bjt

    IGBT 1MBH60-100

    Abstract: 1MBH60-100 TRANSISTOR 1mbh60-100 IGBT 900v 60a s4502 IC60 1mbh60
    Text: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS


    OCR Scan     		PDF 1MBH60-100 IGBT 1MBH60-100 1MBH60-100 TRANSISTOR 1mbh60-100 IGBT 900v 60a s4502 IC60 1mbh60

    200Z-100

    Abstract: No abstract text available
    Text: mi F U JI [IT L M g ü M lE 1-iooovJ T 200 a 2 0 U0 7^ - 1I 0U 0 U • L r» ^ U l £ /< 7 — POWER TRANSISTOR MODULE f 13 ■ 21 Outline Drawings 29 : F e a tu re s • ¡SIiJ± High Voltage V • 7 'J — 4 • ASO M S i ' KF*9j& Including Free W heeling Diode


    OCR Scan     		PDF 200Z-100 20pA/jws 200Z-100

    transistor 131-6

    Abstract: JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm
    Text: FUJI [l'iUM ËïrDSOË 1 D 3 I l- ; - Z 1 2 1-Pack BJT 1200 V 300 A I Outline Drawings u POWER TRANSISTOR MODULE • & f t : Features • ¡SM JÏ High Voltage U ¥4 = t“ KF*9/8c Including Free Wheeling Diode • ASO ^ 7 £ i n Excellent Safe Operating Area


    OCR Scan     		PDF 300Z-120 E82988 Tj-125Â transistor 131-6 JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm

    YTFP450

    Abstract: SC651
    Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :


    OCR Scan     		PDF YTFP450 VDS-10V, 00A/ps YTFP450 SC651

    1jx130

    Abstract: SD1272 VI-211-17 M135 TRANSISTOR 1300 3B
    Text: •1 a t m RF P ro du cts M ic m m s e m i 140 Com merce Drive Montgomery ville, PA 18936-1013 Tel: 215 631-9840 SD1272 RF & MICROWAVE TRANSISTORS 130i. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 175MHz VOLTAGE 12.5V POWER OUT 25W POWER GAIN 9.2dB


    OCR Scan     		PDF 230MHz 175MHz SD1272 SD1272 211/D7-3B 18AWG, S88SU1272-08 24-200pf. 150pt, 1jx130 VI-211-17 M135 TRANSISTOR 1300 3B

    fmw5

    Abstract: No abstract text available
    Text: 'S'/7s $ / T r a n s i s t o r s h 7 UMW5N FMW5 UMW 5N/FMW 5 Kh Dual Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor —jfö'hitt-§-JtlISffl/General Small Signal Amp. • IM • ^W ^äsEI/Dim ensions Unit: mm 1) * - / \ " - 5. - i - J U 21B<7>


    OCR Scan     		PDF