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    1MBH60 Search Results

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    1MBH60 Price and Stock

    Fuji Electric Co Ltd 1MBH60-100

    INSULATED GATE BIPOLAR TRANSISTOR, 60A I(C), 1000V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1MBH60-100 9
    • 1 $20
    • 10 $15
    • 100 $15
    • 1000 $15
    • 10000 $15
    		Buy Now

    1MBH60 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1MBH60-090 Fuji Electric IGBT mold type Scan PDF
    1MBH60-100 Fuji Electric INSULATED GATE BIPOLAR TRANSISTOR Scan PDF
    1MBH60-100 Fuji Electric IGBT Chip Scan PDF
    1MBH60-100 Fuji Electric IGBT mold type Scan PDF
    1MBH60D-090A Fuji Electric (1MBH65D-090A / 1MBH60D-090A) IGBT (Insulated-Gate Bipolar Transistor) Original PDF
    1MBH60D-090A Fuji Electric TRANS IGBT MODULE N-CH 900V 60A Scan PDF
    1MBH60D-090A Fuji Electric Insulated Gate Bipolar Transistor Scan PDF

    1MBH60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    igbt 200v 20a

    Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900


    Original     		1MBH60D-090A 1MBH65D-090A ERW01-060 ERW02-060 ERW03-060 ERW04-060 ERW05-060 ERW06-060 ERW07-120 O-220AB igbt 200v 20a tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060 PDF

    1mbh60-100

    Abstract: No abstract text available
    Text: 1MBH60-100 Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1k V(BR)GES (V)20 I(C) Max. (A)60 Absolute Max. Power Diss. (W)260 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case


    Original     		1MBH60-100 PDF

    tc122 25

    Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060


    Original     		1MBG05D-060 1MBC05-060 1MBC05D-060 1MBH05D-060 1MBG10D-060 1MBC10-060 1MBC10D-060 1MBH10D-060 1MBC15-060 1MB15D-060 tc122 25 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060 PDF

    MBH60D-090A

    Abstract: 1MBH60D 1MBH60D-090A 30S3 H150 aft7
    Text: 1MBH60D-090A g ilG B T IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTO R ^ Features • i H i g h Speed Switching • fëtâifllïJiE Low Saturation Voltage • hÎ SÎ ÆÎ MOSV— Hi gh Impedance Gate »/j\ggy{.y^ - _ S m a l l Package : Applications


    OCR Scan     		1MBH60D-090A 50//s) I95t/R89) MBH60D-090A 1MBH60D 1MBH60D-090A 30S3 H150 aft7 PDF

    IGBT 1MBH60-100

    Abstract: J9100
    Text: 1MBH60-100 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR • : Outline Drawings bkü : Features •H i â X ' • i& ü ü in liS • Hi gh Speed Switching Low Saturation Voltage Hfti/tCMOS-ir— MUie • :y High Impedance Gate Small Package 0. 6 * ■ ffliÊ : Applications


    OCR Scan     		1MBH60-100 l95t/RB9 IGBT 1MBH60-100 J9100 PDF

    1mbh60d-090a

    Abstract: No abstract text available
    Text: 1MBH60D-090A IGBT I : Outline Drawings in s u l a t e d g a t e b ip o l a r t r a n s is t o r Features • High Speed Switching • flfcliiSWE Low Saturation Voltage • M itt M O s y —HUifc High Impedance Gate • ' j ' S S ' S m a l l Package • £ )& : Applications


    OCR Scan     		1MBH60D-090A Rb-100 1mbh60d-090a PDF

    1MBH60D-090A

    Abstract: 1MBH60D transistor z5t 150-TC1
    Text: 1MBH60D-090A IGBT I : Outline Drawings in s u l a t e d g a t e b ip o l a r t r a n s is t o r Features • High Speed Switching • flfcliiSWE Low Saturation Voltage • M itt M O s y —HUifc High Impedance Gate • ' j ' S S ' S m a l l Package • £ )& : Applications


    OCR Scan     		1MBH60D-090A 50/fS} 1MBH60D-090A 1MBH60D transistor z5t 150-TC1 PDF

    1MBH60D-090A

    Abstract: IGBT 900v 60a 1mbh60d090a 30S3 T151 T460 T930 MBH60D-090A
    Text: 1MBH60D-090A I 'i l G B T IG B T INSULATED GATE BIPOLAR TRANSISTOR : Features •i H i g • h Speed Switching Low Saturation Voltage • ¡ iïA^' Îr—hÎSÎÆ MOS>r— •/ j S m a l l High Impedance Gate Package : Applications • ll/iE & S IS ilti


    OCR Scan     		1MBH60D-090A 50//s) I95t/R89) Shl50 1MBH60D-090A IGBT 900v 60a 1mbh60d090a 30S3 T151 T460 T930 MBH60D-090A PDF

    1MBH60-090

    Abstract: P460 T151 T760 T810 T930 induction heater 090 H60-090 z-W99
    Text: 1M BH60-090 ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR : Outline Drawings 5*0.3 • Features • i • • H i g h Speed Switching Low Saturation Voltage M O S^—MUia High Impedance Gate a Gate Ac+o? ©Collector «Emitter Small Package ¿î03 : Applications


    OCR Scan     		1MBH60-090 50/iS) E3Tl30Â 1995-9095t/R89 1MBH60-090 P460 T151 T760 T810 T930 induction heater 090 H60-090 z-W99 PDF

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050 PDF

    IGBT 1MBH60-100

    Abstract: 1MBH60-100 t930 T151 T460
    Text: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS


    OCR Scan     		1MBH60-100 I95t/R89) IGBT 1MBH60-100 1MBH60-100 t930 T151 T460 PDF

    IGBT 1MBH60-100

    Abstract: 1MBH60-100 TRANSISTOR 1mbh60-100 IGBT 900v 60a s4502 IC60 1mbh60
    Text: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS


    OCR Scan     		1MBH60-100 IGBT 1MBH60-100 1MBH60-100 TRANSISTOR 1mbh60-100 IGBT 900v 60a s4502 IC60 1mbh60 PDF

    1MBC15-060

    Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
    Text: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V


    OCR Scan     		1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 O-220 1MBC05D-060 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 M B 6 H D - 9 ^ ± IG B T A IG B T IN SU LA T ED GATE BIPO LA R TR A N SIST O R •iNNt: : Features •S i H i g • i£ S S in E h Speed Switching Low Saturation Voltage • lA A - y - h ft £ t t M O S V — High Impedance Gate Small Package : Applications


    OCR Scan     		195t/R89 PDF

    1mbh60-100

    Abstract: Ir 900v 60a 000M4S3 QQD4451 MIM 205 S2371 MA 75816
    Text: r 1. Absolute maximum ratings Tc=25*C I terns . Symbols Collector-Emitter Voltage Gate-Emitter Voltage Co11ec tor Curren t , Continuos Ratings Units Vces 1000 V Vg e s ±20 V 60 A 180 A Ic Pulse-50^s Ic pulse Max.Power Dissipation Pc 260 Operating Temperature


    OCR Scan     		Pulse-50 -t-15V. 1mbh60-100 Ir 900v 60a 000M4S3 QQD4451 MIM 205 S2371 MA 75816 PDF

    imbi300

    Abstract: No abstract text available
    Text: [ÜT| IGBT mold types • • • • High speed sw itch in g • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w e r drive Su ited fo r high fre q u en cy p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.


    OCR Scan     		1MBH60-090 1MBH60-10Q T03PL 1MBH65-090 1MBH65 1MBI600LP-060 1MBI600LN-060 imbi300 PDF

    IGBT 1MBH60-100

    Abstract: 1mbh 1MBH60100 1MBH60-100 bhoo imbh60 FUJI IGBT
    Text: Ratings and ch aracteristics of Fuji IGBT 1 M B H 6 1. Absolute maximum ratings 0 — 1 O O Tc=25*C I terns Symbols Ratings Units Col lector-Em itter Voltage Vces 1000 V Gate-Emitter Voltage Vces ±20 V 60 A 180 A 260 W + 150 *C Continuos Ic C ollector Current


    OCR Scan     		Pulse-50Â Tji125Â 044SC) IGBT 1MBH60-100 1mbh 1MBH60100 1MBH60-100 bhoo imbh60 FUJI IGBT PDF

    1mbh

    Abstract: No abstract text available
    Text: D IG B T m old types 1High speed sw itching • Lo w saturation voltage Voltage drive m ethod perm its low pow er drive Su ited for high freq uency po w er supplies, such as m icro w a ve ovens 1W h e n using these IG BT s, F U JI'S fast recovery diode ERD60-100 is required.


    OCR Scan     		ERD60-100 1MBH60-090 1MBH60-100 1MBH65-090 1MBH65-100 ERD65-090 1mbh PDF

    1mbh

    Abstract: igbt 200v 30a
    Text: /\°7 —x / W 7s • 1G B T^-«M /K £ < 7 S i U > v ffl i / Power Devices M olded Package Type IGBTs ; 1/K -f 7° / * ¥ H IS]11^ ffl i ^ K ^ < 7° Molded package types, such as microwave ovens / Horizontal deflection circuit V géS fc PC rt,>r-y Volts Volte


    OCR Scan     		1MBH60D-090A 1MBH65D-090A O-220AB 1mbh igbt 200v 30a PDF

    1MBH65-090

    Abstract: 1mbh60-090 2MBI50N-120 6MBI50FA-060 6MBI50L-120 2MBI75F-060 6MBI10L-060 1mbh 2mbi200f 2mbi25f
    Text: IGBT MODULES Ratings and Specifications Alphanumerical index Type Page G roi No. ER ERD60-100 ERD65-090 40 40 Page G rou p No. 1 1 2M 2MBI25F-120 2MBI25L-120 43 41 8 4 2MBI50F-060 2MBI50F-120 2MBI50L-060 2MBI50L-120 2MBI50N-060 2MBI50N-120 42 43 40 41 44 44


    OCR Scan     		ERD60-100 ERD65-090 2MBI25F-120 2MBI25L-120 2MBI50F-060 2MBI50F-120 2MBI50L-060 2MBI50L-120 2MBI50N-060 2MBI50N-120 1MBH65-090 1mbh60-090 6MBI50FA-060 6MBI50L-120 2MBI75F-060 6MBI10L-060 1mbh 2mbi200f 2mbi25f PDF

    1mb12-140

    Abstract: 1MBI30L-060 2MBI100L-060 1mb12 IGBT 1MBH60-100 1MBI30L060 m-219 2MBI100F-060 1mbh collmer igbt
    Text: IGBT DISCRETE T0-3PL, T0-3PF & BBT PACKAGE Device V ces V ce sat V qe=15V Pkg. Switching time (Max.) lc PC cont. Par IGBT Max. lc ton V ges type toff tf Volts Volts Amps. Watts Volts Amps. H sec. 1MB12-140 1400 ±20 12 100 6.0 12 - 1.2 1.0 T03P F - sec.


    OCR Scan     		1MB12-140 1MBH60-100 1MBI30L-060 1MBI50L-060 1MBI75L-060 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI100L-060 1mb12 IGBT 1MBH60-100 1MBI30L060 m-219 1mbh collmer igbt PDF