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    3FL75D Search Results

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    DF378F

    Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E
    Text: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum


    OCR Scan     		PDF PCF35N08 source-10-mil Number-09288 PCF35N08- RFK35N08 RFK35N10 NR231A DF103B DF378F NRJ31A DF378F df103b FT03E I36S PCF35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E

    DG212CJ

    Abstract: DG211CJ
    Text: E SOLID STATE DI G 3875081 G E SOLID D E | 3fl75Dfll DDlDflOfl b STATE 01E 10808 D DG211/DG212 DG211/DG212 SPST 4-Channel Analog Switch GENERAL DESCRIPTION FEATURES The DG211 and DG212 are low cost, C M O S monolithic, Q U A D S P S T analog switches. These can be used In gener­


    OCR Scan     		PDF 3fl75Dfll DG211/DG212 DG211 DG212 16-pin DG212CJ DG211CJ

    transistor 2n4871

    Abstract: 2N4871 2N4870 GET4871 SCR firing unijunction transistor 2n4870 2n4871 transistor unijunction bi14 GET4870
    Text: G E SOLID STATE 3875081 □Ï G E SOLID ]>E~ 3fl75Dfll □□IfiQOM (a STATE U n i j u n c t i o n T r a n s is t o r s a n r l S w it c h e s 01E 18004 D - T 31-21 2N4870,2N4871, GET4870, GET4871 Silicon Unijunction Transistors TO-92 TO-18 The GE/RC A 2 N 4 8 7 0,2N 4 8 71 , and GET4870, GET4871 are


    OCR Scan     		PDF 2N4870, 2N4871, GET4870, GET4871 2N4870 GET4871 GET4870 transistor 2n4871 2N4871 SCR firing unijunction transistor 2n4870 2n4871 transistor unijunction bi14

    MPS-A65

    Abstract: No abstract text available
    Text: G E SOLI» STATE Öl 3875081 G E SOLID » F | 3fl75Dfll 0G17TTE S STATE 01E 1 79 92 D T ' I I - Z l Signal Transistors- MPS-A65 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 6 5 is a p lan ar epitaxial passivated P N P


    OCR Scan     		PDF T-11-11 MPS-A65 MPS-A65

    53-06A

    Abstract: 2n5306 2N5305
    Text: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are


    OCR Scan     		PDF 3fl75Dfll OG17c 2N5305, GES5305, S-42S27 10--Typical 53-06A 2n5306 2N5305

    LM114

    Abstract: LM114A LM114AH LM114H AH TRANSISTOR
    Text: E SOLID STATE □1 DE|3fl75Dfll □ □ 11 □ 4Ì LM114/H, LM 114A/AH Monolithic Dual NPN General Purpose Amplifier T-si^ 'sn GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This


    OCR Scan     		PDF LM114/H, LM114A/AH 300MHz LM114 LM114A, LM114A LM114AH LM114H AH TRANSISTOR

    2N5301

    Abstract: 2N5302 2N5303 RCA-2N5301
    Text: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


    OCR Scan     		PDF 2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301

    PCF35N08

    Abstract: RFK35N08 RFK35N10
    Text: 3875081 G E SOLID STATE -01 DE 1 • 3fl75Dfll GDiaSDa ¡i I T-ZI'OI Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum


    OCR Scan     		PDF PCF35N08 source-10-mil Number-09288 PCF35N08- RFK35N08 RFK35N10 PCF35N08 RFK35N10

    RCA-40346

    Abstract: rca 40412 40412 rca 40346 40412 rca+40412 RCA 40346
    Text: E SOLID STATE : Öl Ì>F| 3fl75Dai GUITSG'I & |~ Q r ~ y j o $ Hfgh-Voltage Power Transistors File Num ber 2 1 1 40 34 6, 40412 Medium-Power Silicon N-P-N Planar Transistors For H ig h -V o lta g e S w itchin g and L in e a r-A m p lifie r A p plicatio ns


    OCR Scan     		PDF RCA-40346, 92CS-I26IS RCA-40346 rca 40412 40412 rca 40346 40412 rca+40412 RCA 40346

    Untitled

    Abstract: No abstract text available
    Text: □1 SOLID STATE DE I 3fl75DBl g O l l O ^ 3 01E 11043 3875081 6 E SOLID STATE D J111-J113 N-Channel JFET Switch T -3 S T -M I S ­ FEATURES APPLICATIONS • • • • • Analog Switches • Choppers • Commutators Low Cost Automated Insertion Package


    OCR Scan     		PDF 3fl75DBl J111-J113 300ps;

    Untitled

    Abstract: No abstract text available
    Text: Ïïï 3875081 G E SOLID D eT| 3fl75Dûl □01733M □ STATE D -r'-JS-H *01E ’1 7 3 3 4 ' D a rlin g to n P o w e r T r a n s is to rs — - — -=-


    OCR Scan     		PDF 3fl75D 01733M IP115, TIP116, TIP117 TIP110, TIP111

    transistor BC 339

    Abstract: 2 ampere pnp darlington array CA3725 T1P112 t1p115 TLP117 TIP110 TIP111 TIP112 TIP116
    Text: Ïïï 3875081 G E SOLID D eT| 3fl75Dûl □01733M □ STATE *01E ’1 7 3 3 4 ' D -r'-JS-H D a rlin g to n P o w e r T ra n s is to rs — - — - =-


    OCR Scan     		PDF D01733M IP115, TIP116, TIP117 TIP110, TIP111 TIP112 TQ-220AB 92CS-399S9 RCA-TIP115, transistor BC 339 2 ampere pnp darlington array CA3725 T1P112 t1p115 TLP117 TIP110 TIP112 TIP116

    tl 0741

    Abstract: 2N6422 HGP-I004 2N6421 30342 30343 s43a 92CS-30341 2N6420 2N6423
    Text: 3875081 G E S O L ID CTATI_— Dï STATE | 3fl75Dôl □017115 1 I 7=53 ' - m g n -vo iiag e Power Transistors File Num ber 1100 2N6420, 2N6421, 2N6422, 2N6423


    OCR Scan     		PDF 2N6420, 2N6421, 2N6422, 2N6423 2N6420) 2N6421) 2N6422) 2N6423) 2N6420 tl 0741 2N6422 HGP-I004 2N6421 30342 30343 s43a 92CS-30341 2N6423

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE □1 DE | 3fl75Dfll DDllOMM S | 3875081 G E SOLID STATE 01E 11044 T - 3 D 7 ~ 2- 5“ n J174-J177 7 P-Channel JFET Switch «• APPLICATIONS Ê FEATURES • Analog Switches • Choppers • Commutators • Low Insertion Loss • No Offset or Error Generated By Closed Switch


    OCR Scan     		PDF 3fl75Dfll J174-J177 -300/ts;

    T2302

    Abstract: RCA-T2300 T2300B lt 302d T2302B T2300D T2301A T2301 T2301 Series T2300A
    Text: G "□ì E SOLI» STATE ÌMf| 3fl7S0fil □Q177cil b 3875081 G E SOLID STATE 0 1E 17791 D T ria c s _ T2300, T2301, T2302 Series File Number 911 2.5-A Sensitive-Gate Silicon Triacs M odified T O -2 0 5 Package for A C Pow er Sw itching


    OCR Scan     		PDF 77cil T2300, T2301, T2302 O-205 RCA-T2300, T2302, RCA-T2300 T2300B lt 302d T2302B T2300D T2301A T2301 T2301 Series T2300A

    GE SC160B triac

    Abstract: Y4W diode y4w transistor H11AG3 y4w surface transistor H11AG2 H11AG1 DIODE Y4W SC160B y4w 7
    Text: G E S O L I» 01 STATE DE § 3 075D Û 1 D 0 M 7 0 5 optoelectronic specifications. T - H l - Z 3 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 G a A1 A s In fra re d E m ittin g D io d e & N P N S ilicon P h o to -T ra n s isto r The G E Solid State H IIA G series consists o f a gallium arsenide infrared


    OCR Scan     		PDF 3fl750fll T-w-83 H11AG1, H11AG2, H11AG3 1N4148 H11AG1 GE SC160B triac Y4W diode y4w transistor H11AG3 y4w surface transistor H11AG2 DIODE Y4W SC160B y4w 7

    3146E

    Abstract: ca3183ae 3183a 3183e 3118A 3118T
    Text: G E S O L I D S T A T E Dl D E | 3ä75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 T “'H 3 * 2 .5 High-Voltage Transistor Arrays Features • M atched general-purpose transistors ■ V g £ m atched + 5 m V max. ■ Operation from D C to 120 M H z C A 3 1 1 8 A T , T ; C A 3 1 4 6 A E , E


    OCR Scan     		PDF 75Clfll G014b3fc> CA3118, CA3146, CA3183 3146E ca3183ae 3183a 3183e 3118A 3118T

    74HC125

    Abstract: 92CS-3 74HCT125 4HC125
    Text: G E SOLI» STATE 01 D E I 3Û7S0Û1 001154a D | 1 -V 3 -2 I _ Technical Data File Num ber CD54/74HC125 CD54/74HCT125 1771 High-Speed CMOS Logic Quad Buffer; 3-State Type Features: • Separate o u tp u t enable in p u ts ■ 3 -state o u tp u ts The R C A -C D 54/7 4H C 125 and C D 54/74H C T125 contain 4


    OCR Scan     		PDF 001154a CD54/74HC125 CD54/74HCT125 54/74H 14-lead 92CS-39SOS 74HC125 92CS-3 74HCT125 4HC125

    cd4009 hex inverter ic

    Abstract: AN-6539 6C04069
    Text: G E SOLID STATE Dl D E | 3fl7S0fll DOlBa^a 1 j : 01E 13292_ D -, 3875081 G E SOLID STATE CD4069UB Types CMOS Hex Inverter Features: High-Voltage Types 20-Volt Rating The RCA-CD4069UB types consist of six CMOS Inverter circuits. These devices are intended fo r all general-purpose Inverter


    OCR Scan     		PDF CD4069UB 20-Volt RCA-CD4069UB 92C5-24440RI cd4009 hex inverter ic AN-6539 6C04069

    SC3000

    Abstract: ua 8560 0NPA
    Text: G E SOLID STATE 17E D 3ñ7S0fll QOaSlflT 2 High-Reliability ASICs - SC3000 Family These data sheets are provided for technical guidance only. The final device performance may vary depending upon the final device design and configuration. CMOS Standard Cells


    OCR Scan     		PDF SC3000 ua 8560 0NPA

    2N5416 RCA

    Abstract: 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA
    Text: E SOLID STATE qi DE 1 3 fl7SDfll QQ171ba ‘i W^T- 3 1 ~ 1 High-Voltage Power Transistors- 5 !-• _ 2N5415, 2N5416 File Number Silicon P-N-P High-Voltage Planar Transistors


    OCR Scan     		PDF 2N5415, 2N5416 T-37W7 2N5415: 2N344CT 2NS416: 2N3439" O-205AD 2NS416) 2N5416) 2N5416 RCA 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA

    MJ2955

    Abstract: MJ2955 300 watts amplifier BDX18 bdx18 me distan U007 L100 J BDX18 33z3
    Text: G E SOLID STATE 3875081 G E SOL ID S TATE Pro Electron Power Transistors _ 01 ]>F| 3fl7S0fll 0017557 T 01Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 Silicon P-N-P Epitaxial-Base High-Power Transistors File Number 994 TERMINAL DESIGNATIONS Rugged, Broadly A pplicable Devices


    OCR Scan     		PDF BDX18, MJ2955 O-220AB RCA-BDX18 MJ2955 BDX18 MJ295S. 92CS-2 001LECTOR-TO-EMITTER 290Q7 MJ2955 300 watts amplifier bdx18 me distan U007 L100 J BDX18 33z3

    Faa23

    Abstract: No abstract text available
    Text: ~G E SOLID STATE 01 De | 3fl7S0fll QD13L73 Q 01E 13672 ' 3875081 G E SOLID STATE CA3300 Types D “p CMOS Video Speed 6-Bit Flash Analog-to-Digital Converter For Use in Low-Power Consumption, High-Sp Digitization Applications ;u 18-Lead Dual-ln-Llne kPlastic Package


    OCR Scan     		PDF QD13L73 CA3300 18-Lead 15-MHz 66-ns 30-MHz 92CM-33324 CA3300H. Faa23

    BU323

    Abstract: BU323A M094 34053 HA 17304 92CM-34053 TF13W
    Text: G E SOLI» STATE 3875081 ÏÏÏ G E~ S O L I D S T AT E D if | 3 fl7 S G û l 01E 17301 0 D 1 7 3 G1 D Darlington Power Transistors File N u m b e r 1312 BU323, BU323A 10-Ampere N-P-N Monolithic


    OCR Scan     		PDF D017301 TF13W BU323, BU323A 10-Ampere O-204AA BU323 BU323A VI6U323A) M094U M094 34053 HA 17304 92CM-34053 TF13W