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    3DQ11 Price and Stock

    Diodes Incorporated AP7343DQ-11FDZW-7

    LDO CMOS LOWCURR W-DFN2020-6 T&R
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    DigiKey AP7343DQ-11FDZW-7 Reel 3,000 3,000
    • 1 -
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    • 10000 $0.17574
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    AP7343DQ-11FDZW-7 Digi-Reel 1
    • 1 $0.53
    • 10 $0.454
    • 100 $0.3394
    • 1000 $0.20604
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    AP7343DQ-11FDZW-7 Cut Tape 1
    • 1 $0.53
    • 10 $0.454
    • 100 $0.3394
    • 1000 $0.20604
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    Avnet Americas AP7343DQ-11FDZW-7 Reel 8 Weeks 3,000
    • 1 -
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    • 10000 $0.11766
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    Mouser Electronics AP7343DQ-11FDZW-7 3,000
    • 1 $0.52
    • 10 $0.453
    • 100 $0.339
    • 1000 $0.206
    • 10000 $0.163
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    Diodes Incorporated AP7343DQ-11W5-7

    IC REG LINEAR 1.1V 300MA SOT25
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    DigiKey AP7343DQ-11W5-7 Cut Tape 2,438 1
    • 1 $0.42
    • 10 $0.356
    • 100 $0.2658
    • 1000 $0.1614
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    AP7343DQ-11W5-7 Reel 3,000
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    • 10000 $0.14273
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    AP7343DQ-11W5-7 Digi-Reel 1
    • 1 $0.42
    • 10 $0.356
    • 100 $0.2658
    • 1000 $0.1614
    • 10000 $0.1614
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    Avnet Americas AP7343DQ-11W5-7 Reel 8 Weeks 3,000
    • 1 -
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    • 10000 $0.0767
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    Mouser Electronics AP7343DQ-11W5-7 2,637
    • 1 $0.42
    • 10 $0.333
    • 100 $0.247
    • 1000 $0.165
    • 10000 $0.134
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    Avnet Silica AP7343DQ-11W5-7 10 Weeks 3,000
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    Siemens 6AG41143DQ110CX1

    SIMATIC IPC847E (RACK PC)
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    DigiKey 6AG41143DQ110CX1 Bulk 1
    • 1 $5389.1
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    RS 6AG41143DQ110CX1 Bulk 12 Weeks 1
    • 1 $5794.25
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    Diodes Incorporated AP7343DQ-11FDUW-7

    LINEAR IC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AP7343DQ-11FDUW-7 Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.1155
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    Mouser Electronics AP7343DQ-11FDUW-7
    • 1 $0.4
    • 10 $0.333
    • 100 $0.227
    • 1000 $0.127
    • 10000 $0.103
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    SiTime Corporation SIT9002AI-233N33DQ116.62500

    MEMS OSC XO 116.6250MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9002AI-233N33DQ116.62500 1
    • 1 $13.66
    • 10 $13.66
    • 100 $13.66
    • 1000 $2.70628
    • 10000 $2.51298
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    3DQ11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U4B R950

    Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
    Text: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original     		PDF MPC8560 MPC8560UG CH370 U4B R950 PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009

    amd 29F400AB

    Abstract: 29F400AT 29F400AB
    Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		PDF Am29F400AT/Am29F400AB S-Bit/262 16-Bit) 44-pin 48-pin Am29F400AT/Am 29F400AB Am29F400T/Am29F400B 18612B. amd 29F400AB 29F400AT 29F400AB

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC59G1631 AFB-80,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 262,144-WORD x 2-BANK x 32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1631AFB is a CMOS synchronous graphics random access m em ory organized as 2 6 2,14 4


    OCR Scan     		PDF TC59G1631 AFB-80 144-WORD 32-BIT TC59G1631AFB TQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 2 5 6 K x 16 Bit C M O S Dynamic RA M with Fast Page Mode DESCRIPTION This is a family of 262.144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage -*-5.0V or +3.3V , access time


    OCR Scan     		PDF KM416C256D, KM416V256D 256Kx16 DQODQ15

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms

    29053

    Abstract: intel pa28f800
    Text: in t ! PRELIMINARY 8-MBIT 512K X 1 6 ,1024K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation


    OCR Scan     		PDF 1024K 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B OperatioB-60 AP-611 28F002/200BX-T/B 28F002/200BL-T/B 29053 intel pa28f800

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58F400/401FI/FTI-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x8 BITS/262,144 WORDS x16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized


    OCR Scan     		PDF TC58F400/401FI/FTI-90 BITS/262 TC58F400/401 304-bit 44-pin 48-pin FI/FTI-90

    Untitled

    Abstract: No abstract text available
    Text: Advance Information S E M I C O N D U C T O R S M U9C8358 Quad 10/1 OOMb Ethernet Filter Interface APPLICATION BENEFITS > > DISTINCTIVE CHARACTERISTICS 10/100Mb Ethernet switching, bridging, and remote access at wire speed Glueless connection to MUSIC LANCAM and


    OCR Scan     		PDF U9C8358 10/100Mb 100Mb

    3DQ10

    Abstract: KM416C256B NSC55 a6az 3DQ11 KM416V256B
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM416C256B, KM416V256B 256Kx16 DQ8-DQ15 DDED23S 3DQ10 KM416C256B NSC55 a6az 3DQ11 KM416V256B

    Untitled

    Abstract: No abstract text available
    Text: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		PDF 256Kx16 KM416C254DT 00304flb

    TC59G1631

    Abstract: No abstract text available
    Text: TO SHIBA TC59G1631AFB-80.-10.-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 262,144-WORD x 2-BANK x 32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1631AFB is a CMOS synchronous graphics random access memory organized as 262, 144


    OCR Scan     		PDF TC59G1631AFB-80 144-WORD 32-BIT TC59G1631AFB TC59G1631 AFB-80 TQFP100-P-1420-0

    C1204B

    Abstract: No abstract text available
    Text: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1204BT 16Bit 1Mx16 03042b C1204B

    Untitled

    Abstract: No abstract text available
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM416C256B, KM416V256B 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC58F400/401 FI/FTI-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized


    OCR Scan     		PDF TC58F400/401 FI/FTI-90 BITS/262 304-bit 44-pin 48-pin

    KM416C60J

    Abstract: KM416C60 km416c60-j JDQ14
    Text: KM416C60 CMOS DRAM 64K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 65,536 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time 55,60 or 70 power consumption (Normal


    OCR Scan     		PDF KM416C60 64Kx16 KM416C60J KM416C60 km416c60-j JDQ14

    V1004C

    Abstract: SA5V 3DQ11
    Text: KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This Is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cyde (1K Ref. or 4K


    OCR Scan     		PDF KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C 16Bit 1Mx16 64ms/16ms V1004C SA5V 3DQ11