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    3DQ11 Search Results

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    3DQ11 Price and Stock

    Diodes Incorporated AP7343DQ-11FDZW-7

    LDO CMOS LOWCURR W-DFN2020-6 T&R
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    DigiKey AP7343DQ-11FDZW-7 Cut Tape 3,000 1
    • 1 $0.69
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    • 1000 $0.17093
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    AP7343DQ-11FDZW-7 Reel 3,000 3,000
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    AP7343DQ-11FDZW-7 Digi-Reel 3,000 1
    • 1 $0.69
    • 10 $0.412
    • 100 $0.2572
    • 1000 $0.17093
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    Avnet Americas AP7343DQ-11FDZW-7 Reel 8 Weeks 3,000
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    Mouser Electronics AP7343DQ-11FDZW-7 3,000
    • 1 $0.62
    • 10 $0.334
    • 100 $0.192
    • 1000 $0.168
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    Diodes Incorporated AP7343DQ-11W5-7

    IC REG LINEAR 1.1V 300MA SOT25
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    DigiKey AP7343DQ-11W5-7 Digi-Reel 2,438 1
    • 1 $0.52
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    AP7343DQ-11W5-7 Cut Tape 2,438 1
    • 1 $0.52
    • 10 $0.306
    • 100 $0.1884
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    AP7343DQ-11W5-7 Reel 3,000
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    Avnet Americas AP7343DQ-11W5-7 Reel 20 Weeks 3,000
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    Mouser Electronics AP7343DQ-11W5-7 2,576
    • 1 $0.49
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    • 100 $0.138
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    Avnet Silica AP7343DQ-11W5-7 22 Weeks 3,000
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    Siemens 6AG41143DQ110CX1

    SIMATIC IPC847E (RACK PC)
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    DigiKey 6AG41143DQ110CX1 Bulk 1
    • 1 $5389.1
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    RS 6AG41143DQ110CX1 Bulk 12 Weeks 1
    • 1 $5794.25
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    Diodes Incorporated AP7343DQ-11FDUW-7

    LINEAR IC
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    DigiKey AP7343DQ-11FDUW-7 Reel 3,000
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    Mouser Electronics AP7343DQ-11FDUW-7
    • 1 $0.4
    • 10 $0.333
    • 100 $0.227
    • 1000 $0.127
    • 10000 $0.103
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    SiTime Corporation SIT9002AI-233N33DQ116.62500

    MEMS OSC XO 116.6250MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9002AI-233N33DQ116.62500 1
    • 1 $13.66
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    • 1000 $2.70628
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    3DQ11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    U4B R950

    Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
    Text: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original
    MPC8560 MPC8560UG CH370 U4B R950 PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009 PDF

    amd 29F400AB

    Abstract: 29F400AT 29F400AB
    Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


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    Am29F400AT/Am29F400AB S-Bit/262 16-Bit) 44-pin 48-pin Am29F400AT/Am 29F400AB Am29F400T/Am29F400B 18612B. amd 29F400AB 29F400AT 29F400AB PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC59G1631 AFB-80,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 262,144-WORD x 2-BANK x 32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1631AFB is a CMOS synchronous graphics random access m em ory organized as 2 6 2,14 4


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    TC59G1631 AFB-80 144-WORD 32-BIT TC59G1631AFB TQFP100-P-1420-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 2 5 6 K x 16 Bit C M O S Dynamic RA M with Fast Page Mode DESCRIPTION This is a family of 262.144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage -*-5.0V or +3.3V , access time


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    KM416C256D, KM416V256D 256Kx16 DQODQ15 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This


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    KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms PDF

    29053

    Abstract: intel pa28f800
    Text: in t ! PRELIMINARY 8-MBIT 512K X 1 6 ,1024K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation


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    1024K 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B 28F800CE-T/B, 28F008BE-T/B OperatioB-60 AP-611 28F002/200BX-T/B 28F002/200BL-T/B 29053 intel pa28f800 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58F400/401FI/FTI-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x8 BITS/262,144 WORDS x16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized


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    TC58F400/401FI/FTI-90 BITS/262 TC58F400/401 304-bit 44-pin 48-pin FI/FTI-90 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Information S E M I C O N D U C T O R S M U9C8358 Quad 10/1 OOMb Ethernet Filter Interface APPLICATION BENEFITS > > DISTINCTIVE CHARACTERISTICS 10/100Mb Ethernet switching, bridging, and remote access at wire speed Glueless connection to MUSIC LANCAM and


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    U9C8358 10/100Mb 100Mb PDF

    3DQ10

    Abstract: KM416C256B NSC55 a6az 3DQ11 KM416V256B
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    KM416C256B, KM416V256B 256Kx16 DQ8-DQ15 DDED23S 3DQ10 KM416C256B NSC55 a6az 3DQ11 KM416V256B PDF

    Untitled

    Abstract: No abstract text available
    Text: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


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    256Kx16 KM416C254DT 00304flb PDF

    TC59G1631

    Abstract: No abstract text available
    Text: TO SHIBA TC59G1631AFB-80.-10.-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 262,144-WORD x 2-BANK x 32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1631AFB is a CMOS synchronous graphics random access memory organized as 262, 144


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    TC59G1631AFB-80 144-WORD 32-BIT TC59G1631AFB TC59G1631 AFB-80 TQFP100-P-1420-0 PDF

    C1204B

    Abstract: No abstract text available
    Text: KM416C1204BT ELECTRONICS CMOS DRAM 1 M x 1 6 B i t C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mod offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    KM416C1204BT 16Bit 1Mx16 03042b C1204B PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    KM416C256B, KM416V256B 256Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC58F400/401 FI/FTI-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized


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    TC58F400/401 FI/FTI-90 BITS/262 304-bit 44-pin 48-pin PDF

    KM416C60J

    Abstract: KM416C60 km416c60-j JDQ14
    Text: KM416C60 CMOS DRAM 64K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 65,536 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time 55,60 or 70 power consumption (Normal


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    KM416C60 64Kx16 KM416C60J KM416C60 km416c60-j JDQ14 PDF

    V1004C

    Abstract: SA5V 3DQ11
    Text: KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This Is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cyde (1K Ref. or 4K


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    KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C 16Bit 1Mx16 64ms/16ms V1004C SA5V 3DQ11 PDF