Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    3C TRANSISTOR Search Results

    3C TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    3C TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SBOU047 – April 2007 DEM-OPA-SSOP-3C Demonstration Fixture 1 Description The DEM-OPA-SSOP-3C demonstration fixture is a non-inverting configuration, unpopulated printed circuit board PCB for high-speed triple operational amplifiers in SSOP-16 packages with flow-through


    Original     		PDF SBOU047 SSOP-16

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AP3842C/3C/4C/5C General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external


    Original     		PDF AP3842C/3C/4C/5C AP3842C/3C/4C/5C AP3846-21-6485

    2N3054

    Abstract: No abstract text available
    Text: SVNTC Power Transistors 2N3054 Silicon NPN Transistors 1B 2E 3C Features •With TO-66 package ·Designed for general-purpose switching and amplifier applications Absolute Maximum Ratings Tc=25℃ SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER


    Original     		PDF 2N3054 2N3054

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors  BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-363 BC857S OT-363 -10mA -100mA -10mA 100MHz 200Hz

    FMMTA20R

    Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO


    Original     		PDF FMMTA20 FMMTA20R FMMTA70 100mA, 100MHz 140kHz, FMMTA20R FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C

    2SC1030

    Abstract: No abstract text available
    Text: Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage


    Original     		PDF 2SC1030 2SC1030

    sot89 MARKING 3C

    Abstract: transistor KIA431BF GRADE KIA431B sot-89
    Text: SEMICONDUCTOR KIA431BF MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 3C KIA431BF * Grade - - Lot No. 016 1 2 Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week Note * Grade: Transistor only


    Original     		PDF KIA431BF OT-89 sot89 MARKING 3C transistor KIA431BF GRADE KIA431B sot-89

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUW58 Silicon NPN Transistors IB 2E 3C Features With TO-3 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCB Collector to base voltage


    Original     		PDF BUW58 100mA;

    012-J

    Abstract: No abstract text available
    Text: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW CIRCUIT PROTECTORS MULTILAYER METAL OXIDE VARISTOR NV73 W NE STRUCTURE 1 2 3a 3b 3c PRODUCT CODE COATING COLOR NV73 Internal electrode layer Pt Zinc oxide ceramic body (ZnO) Ag layer Diffusion barrier (Ni)


    Original     		PDF

    smd code marking rf ft sot23

    Abstract: TRANSISTOR SMD MARKING CODE JC smd rf transistor marking SMD TRANSISTOR MARKING 3C rf amplifier sot23 5 marking 14 CD jc SMD code sot23 "Marking code" SUs SOT-23 6 pin TRANSISTOR SMD CODE p transistor smd marking NA sot-23 smd marking code transistor rf
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTOR CMBT5179 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =3C Designed for use in Low Noise UHF/VHF Amplifiers


    Original     		PDF ISO/TS16949 CMBT5179 OT-23 15omers C-120 CMBT5179Rev290503E smd code marking rf ft sot23 TRANSISTOR SMD MARKING CODE JC smd rf transistor marking SMD TRANSISTOR MARKING 3C rf amplifier sot23 5 marking 14 CD jc SMD code sot23 "Marking code" SUs SOT-23 6 pin TRANSISTOR SMD CODE p transistor smd marking NA sot-23 smd marking code transistor rf

    NV73A2A

    Abstract: No abstract text available
    Text: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW CIRCUIT PROTECTORS MULTILAYER METAL OXIDE VARISTOR NV73 W NE STRUCTURE 1 2 3a 3b 3c PRODUCT CODE COATING COLOR NV73 Internal electrode layer Pt Zinc oxide ceramic body (ZnO) Ag layer Diffusion barrier (Ni)


    Original     		PDF

    324 3842

    Abstract: 3842 PWM power supply application note ua 3842 TRANSISTOR AZ431 AP384XC PWM IC 8 PIN DIP 3842 ap3842 3C15
    Text: Data Sheet CURRENT MODE PWM CONTROLLER AP384XC General Description Features The AP3842C/3C/4C/5C are high performance fixed frequency current-mode PWM controller series. • · These integrated circuits are optimized for off-line and DC-DC converter applications with minimum external


    Original     		PDF AP384XC AP3842C/3C/4C/5C AP3842C AP3844C 324 3842 3842 PWM power supply application note ua 3842 TRANSISTOR AZ431 AP384XC PWM IC 8 PIN DIP 3842 ap3842 3C15

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 - MARCH 1995_ ' PARTMARKING DETAIL - FMMTA20 - 1C FMMTA20R - 3C COMPLEMENTARY TYPE FMMTA70 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage


    OCR Scan     		PDF FMMTA20 FMMTA20 FMMTA20R FMMTA70 100mA, 100MHz 140kHz, 300us.

    BF195

    Abstract: BF494 BF494 bf199 BF237 BF238 BF496 BF196 BF254-3 BF254-4 C0639
    Text: TP-92 Plastic Package Transistors NPN - - -Max mum latings Type No. ^ce (V) Min BF195 ^CE (V) Min 30 BF196 2C 40 BF197 BF198 5 3C 40 4 25 40 Electrical Characteristics {Ta=25”C, Unless Otherwise Sneciflnrn


    OCR Scan     		PDF BF195 O-92-2 BF196 BF197 BF198 CD9011F CD9011G CD9011H BF494 BF494 bf199 BF237 BF238 BF496 BF254-3 BF254-4 C0639

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA Order this document by MMDF3C03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3C 03H D Medium Power Surface Mount Products Motorola Preferred Device C om plem entary TMOS Field E ffect Transistors COMPLEMENTARY DUAL TMOS POWER FET


    OCR Scan     		PDF MMDF3C03HD/D b3b72S4

    Darlington pair

    Abstract: Darlington pair IC schematic ULN2800A-Series ULN2804A
    Text: ULN2804A DARLINGTON TRANSISTOR ARRAY SLLS311 -J U N E 1998 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY 500-mA-Rated Collector Current Single Output N DUAL-IN-LINE PACKAGE (TOP VIEW ) High-Voltage Outputs . . . 50 V 1C Output Clamp Diodes 2C 3C


    OCR Scan     		PDF ULN2804A SLLS311 500-mA-Rated ULN2800A-Series Darlington pair Darlington pair IC schematic ULN2800A-Series

    "to-98" package

    Abstract: 2N5172
    Text: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a


    OCR Scan     		PDF 2N5172, MPS5172, PN5172, 2N6076 PN5172 obser10V, "to-98" package 2N5172

    Untitled

    Abstract: No abstract text available
    Text: FF 300 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe W erte V ces Maximum rated values 600 V 300 A Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,045 3C/W RthJC DC, pro Zweig / per arm


    OCR Scan     		PDF 3403EcI7

    sot323 marking code VL

    Abstract: PMSS3906 transistor p06
    Text: • b bS 3cì31 0025127 ÒSI « A P X N AMER PHILIPS/DISCRETE b7E Philips S em iconductors P roduct specification PNP general purpose transistor PMSS3906 FEATURES • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, primarily intended for use


    OCR Scan     		PDF PMSS3906 OT323 MAM096 2St131 sot323 marking code VL PMSS3906 transistor p06

    transistor rc4

    Abstract: MMBT5179 MPS5179
    Text: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common


    OCR Scan     		PDF MPS5179 MMBT5179 OT-23 tS0113D transistor rc4 MMBT5179 MPS5179

    RFM18N08

    Abstract: RFM18N10 RFP18N08 RFP18N10
    Text: cil B Ë | 3Û7SD01 001Û177 4 3875081 G E SÖLID STATE 01E 18177 D T~3C ~ 3 Standard Power MOSFETs RFM18N08, RFM18N10, RFP18N08, RFP18N10 File Number 1446 N-Channel Enhancment-Mode Power Field-Effect Transistors 18 A, 80 V — 100 V ros(on): 0.1fi Features:


    OCR Scan     		PDF RFM18N08, RFM18N10, RFP18N08, RFP18N10 RFM18N08 RFM18N10 RFP18N08 RFP18N10*

    FF100R12KF2

    Abstract: No abstract text available
    Text: FF 100 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Therm al properties 0,095 3C/W Rthjc DC, pro Baustein / per module 0,19 DC/W DC, pro Zweig / per arm 0,04 C/W RthCK pro B a u ste in /p e r module


    OCR Scan     		PDF FF100R12KF2

    8C337

    Abstract: 8C327 8C337-16 3C337 3C327A BC337A sc337 BC328 BC337 BC338
    Text: !< - BC337^ BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 variant envelopes, prim arily intended fo r use in driver and o u tp u t stages o f audio amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C 327A and BC328 respectively.


    OCR Scan     		PDF BC337xc. BC337A BC338 8C337, BC337A, BC338 8C327, 3C327A BC328 8C337 8C327 8C337-16 3C337 BC337A sc337 BC337

    bc 303 transistor

    Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
    Text: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in


    OCR Scan     		PDF