MTP8P20
Abstract: T-39-ZZ
Text: MOTOROLA S C {XSTRS/R F> 5bE D L.3b75S4 QOTllOM 1 Order this data sheet by MTP8P20/D MOTOROLA c Designer's Data Sheet ea SEM IC O N D U C T O R tmti&a mitÉkm t - 3 ° i 'Z 3 TECHNICAL DATA MTP8P20 P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode
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3b75S4
MTP8P20/D
MTP8P20
MTP8P20
T-39-ZZ
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC X ST RS /R F ShE D • L,3b75S4 O Q T G S H T 1 ■ MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 uifm PRELIMINARY DATA MRH1240NHXV, MRH1240NHS PR O C ESSED TO MIL-S-19500 Discrete Military Operation RADIATION TOLERANT TRANSISTOR 40 VOLT, 10 AM PERE
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3b75S4
MRH1240NHXV,
MRH1240NHS
MIL-S-19500
b3b7254
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Untitled
Abstract: No abstract text available
Text: M O T OR OL A SC -CXSTRS/R F> MOTOROLA SC XSTRS/R F Tb D Ë J fc.3b75S4 ODf lSMT O y 6 3 6 7 2 54 96D 8 2 4 9 0 D _T ' 4 3 ' a S MHQ4013 MHQ4014 M A XIM U M RATINGS Rating Symbol MHQ4013 MHQ4014 Unit Collector-Emitter Voltage VCEO 40 45 Collector-Emitter Voltage
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3b75S4
MHQ4013
MHQ4014
MHQ4014
O-116
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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DK101/D.
O-22QI
0020-H
MFE9200
BUZ84A
BUZ90 equivalent
IRF150 MOSFET AMP circuit
BUZ35S
MTP40N06M
IRFZ22 mosfet
1RF620
MTM12N10L
MTP25N10E
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VK211-073B
Abstract: PT8852 PT8852A CASE211-07
Text: 12E D I MOTOROLA b3t.72S4 0DÛÛ133 4 | MOTORCLA SC X S T R S /R -f-5 3 -jJ F SE M IC O N D U C T O R TECHNICAL DATA PT8852 PT8852A The RF Line V H F P o w e r T r a n s isto rs . .de signed for 12.5 Volt low band VH F large-signal power amplifier applications in
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b3ti72S4
-p-33
PT8852,
PT8852A
b3ti75S4
VK211-073B
9500-D0
PT8852
PT8852A
CASE211-07
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MJ75BX100
Abstract: No abstract text available
Text: 6 3 6 7 2 54 MOTOROLA MOTOROL A ^ SC X STRS/R F D F|b3b7ES4 D T # -3 5 9 6D 8 1 4 8 7 Order this data sheet by MJ75BX100/D 0DÖ14Ö7 4 f SEMICONDUCTOR TECHNICAL DATA MJ75 B X 100 NPN Silico n Pow er Transisto r Module Energy M anagement S eries DUAL TRI-STAGE
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MJ75BX100/D
MK145BP,
MJ75BX100
BS-3766
MJ75BX100
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md918
Abstract: MD918A
Text: M O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA ^ SC »F|t.3b7ESM 96D 82 4 2 2 C X S T R S / R F _ T Sym bol Value Unit Coliector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage V CES 30 Vdc Emitter-Base Voltage Ve b o 3.0 Vdc 'c 50 mAdc Collector Current — Continuous
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MD918
MD918AF
D918AB
D918AF
MD918A
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2N4351 MOTOROLA
Abstract: mosfet equivalent mosfet 2n4351 2N4351
Text: M O T O RO LA SC XSTRS/R F 1HE D | b3b?a51 GOflkbSS 4 | 2N4351 CASE 20-03, STYLE 2 TO-72 TO-206AF Drain MAXIMUM RATINGS Symbol Value Unît Drain-Source Voltage Vos 25 Vdc Draln-Gate Voltage Vd G 30 Vdc Gate-Source Voltage* Rating \ fj n Gate \ 4 J Cas«
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2N4351
O-206AF)
2N4351 MOTOROLA
mosfet equivalent
mosfet 2n4351
2N4351
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mbd5300
Abstract: mbd-5300 ADC 0408 DV2 15E mjf102
Text: MOTOROLA SC X S T R S /R F 12E 0 I b 3 t.7 2 S 4 GOäSMSb T - 3 5 | 3 - 3 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Full Pak MJF102 Com plem entary Pow er Darlingtons MJF107 PIMP For Isolated Package Applications COMPLEMENTARY SILICON POWER DARLINGTONS 8 AMPERES
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MJF102
MJF107
b3b7254
MJF102,
MJF102
mbd5300
mbd-5300
ADC 0408
DV2 15E
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Untitled
Abstract: No abstract text available
Text: M M O T O R O L A Advance Information Sin gle IG B T Gate Driver The MC33153 is specifcally designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc m otor con trol and uninterruptable power supplies. Although designed for driving dis
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MC33153
b3b725M
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2N2897
Abstract: 2N2895 2N2896
Text: MOTOROLA SC XSTRS/R 12E F D I b3fc>7BS4 Q QÖt . 27 3 T | 2N2895'r’ 27''3 thru 2N2897 MAXIMUM RATINGS Rating Symbol 2N2895 2N2896 2N2897 U nit VCEO 65 90 45 Vdc Coltector-Emitter Voltage Collector-Emitter Voltage VCER 80 140 60 Vdc Collector-Base Voltage
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2N2895
2N2896
2N2897
2N2897
2N2896,
2N2895,
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arco 402
Abstract: JMC2951 SK1381 001H MFE140 SK138 185 6-140
Text: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOT OROLA SC CXSTRS/R D E ~ | h B b 7 a S 4 OOflEbh? □ "J- F 96D 82667 D - r - 3 /- ajr MFE140 CASE 20-03, STYLE 9 TO-72 TQ-206AF) M A X IM U M R A T IN G S Symbol Value Unit Drain-Source Voltage Rating
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MFE140
O-206AF)
10/iAdc,
3b75s4
gdflet71
arco 402
JMC2951
SK1381
001H
MFE140
SK138
185 6-140
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MJ50AC100
Abstract: mj50ac DS3720
Text: 63672S4 MOTOROLA SC XSTR S/R MOTOROLA e h S E M I C O N flD D U C T O R m F 80C 76856 » T - - 3 1 - 3 S v r u e r itu a u a i a » É |b 3b 7S S 4 DD7bñSt, sheet by MJ50AC100/D ¡JS*1.""!»- *^1 Íaihá¿éflü& iir'i rV id it rV ' ’i » l i f c i ì ft
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63672S4
MJ50AC100/D
MK145BP,
MJ50AC100
MJ50AC100
mj50ac
DS3720
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2N5086
Abstract: No abstract text available
Text: 2N5086 2N5087* M A XIM U M RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage v EBO 3.0 Vdc Collector Current — Continuous 'c 50 mAdc Total Device Dissipation @ T ^ = 25X Derate above 25°C
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2N5086
2N5087*
T0-92
O-226AA)
MPS3905
01Q3342
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