Untitled
Abstract: No abstract text available
Text: DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCED INFORMATION NEW PRODUCT 30V Features RDS(on) ID • 100% Unclamped Inductive Switch (UIS) Test In Production TA = +25°C • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
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DMN3016LK3
DS37206
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Untitled
Abstract: No abstract text available
Text: DMT5015LFDF 50V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 50V 15mΩ @ VGS = 10V 23mΩ @ VGS = 4.5V • • • • • • ID max TA = +25°C 9.1A 7.4A 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage
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DMT5015LFDF
DS37202
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MOSFET 9027
Abstract: No abstract text available
Text: DMT5015LFDF 50V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 50V 15mΩ @ VGS = 10V 23mΩ @ VGS = 4.5V • • • • • • ID max TA = +25°C 9.1A 7.4A 0.6mm profile – ideal for low profile applications PCB footprint of 4mm2 Low Gate Threshold Voltage
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DMT5015LFDF
DS37202
MOSFET 9027
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Untitled
Abstract: No abstract text available
Text: DMT6016LFDF 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 16mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID max TA = +25°C 8.9A 6.8A Description • 100% Unclamped Inductive Switch (UIS) test in production
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DMT6016LFDF
DS37203
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MJ50AC100
Abstract: mj50ac DS3720
Text: 63672S4 MOTOROLA SC XSTR S/R MOTOROLA e h S E M I C O N flD D U C T O R m F 80C 76856 » T - - 3 1 - 3 S v r u e r itu a u a i a » É |b 3b 7S S 4 DD7bñSt, sheet by MJ50AC100/D ¡JS*1.""!»- *^1 Íaihá¿éflü& iir'i rV id it rV ' ’i » l i f c i ì ft
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63672S4
MJ50AC100/D
MK145BP,
MJ50AC100
MJ50AC100
mj50ac
DS3720
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