BFY90 MOTOROLA
Abstract: BFY89 RF502 bfy90 SILICON DICE motorola DIE npn RF BFYC90
Text: MOTOROLA ! SC i D I O D E S / O P T O } 6367255 MOTOROLA 34 SC DE | t.3b725S □03flDÛE û D IO D E S /O P T O 34C 7 SILICON RF TRANSISTOR DICE (continued) - 3808 2 3 /-(S ' BFYC90 DIE NO. — npn LINE SOURCE — RF502.199 This die provides performance equal to or better than that of
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3b725S
03flD
RF502
BFYC90
BFY89
BFY90
BFY90 MOTOROLA
bfy90
SILICON DICE motorola
DIE npn RF
BFYC90
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon MMBT6428LT1 MMBT6429LT1 C0LLE CT0R 3 EMITTER 1 2 M AXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit C ollector-Em itter Voltage VCEO 50 45 Vdc C ollector-B ase Voltage VCBO 60 55 Vdc
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MMBT6428LT1
MMBT6429LT1
6428LT1
6429LT1
O-236AB)
Ma31SD
BT6428LT1
BT6429LT1
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74HC175
Abstract: No abstract text available
Text: w a w m w i nOTOROLA SC -ELOGIO 05 D I t,3t,7SSB DGflDE?! 3 T MOTOROLA - L i U - ô l - o S SEMICONDUCTOR TECHNICAL DATA MC54/74HC175 Quad D Flip-Flop w ith Com m on Clock and Reset J SUFFIX CERAMIC C A S E 620*09 High-Perform ance Silicon-Gate C M O S The MC54/74HC175 is identical in pinout to the LS175. The device inputs are
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MC54/74HC175
MC54/74HC175
LS175.
b3k72S2
74HC175
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b2045
Abstract: B2045 motorola B2035 2045c Single Schottky diode b2045 2N6277
Text: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2035CT MBR2045CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBR2035CT/D
B2035,
B2045
MBR2035CT
MBR2045CT
MBR2045CT
21A-06
T0-220AB)
3b725S
b2045
B2045 motorola
B2035
2045c
Single Schottky diode b2045
2N6277
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C122B
Abstract: C122 c122D1 C122B1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA C122 1 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
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21A-04
CTO-220AB)
b3b7E55
3b725S
00T0207
C122B
C122
c122D1
C122B1
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2n5169
Abstract: 2N5170
Text: M O T O R O L A SC { D I O D E S / O P T O l ÏÏÏ DeT | L,3ti7aSS □ □ 7 ô £ï û Ll ta T ~ 2N5164 thru 2N5171 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristor . . . designed for industrial and consumer applications such as power supplies,
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2N5164
2N5171
2N5164,
2N5168
2N5165,
2n5169
2N5170
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order th is docum ent by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded
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MTB3N60E1/D
MTB3N60E1
418C-01
3b725S
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO bfiE T> b3ti72SS DDfl7SSa T2T • M0T7 Order this data sheet by M1MA151WKT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual S w itching Diodes M1MA151WKT1 M1MA152WKTI M o to ro la P referre d D evices These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in
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b3ti72SS
M1MA151WKT1/D
M1MA151WKT1
M1MA152WKTI
SC-59
M1MA151/2WKT1
inch/3000
M1MA151/2WKT3to
inch/10
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VQE 24
Abstract: vqe 24 e VQE 23 E vqe 21 f ad vqe 24 d 12v to 220 v ac inverter MHPM7A16A120B IGBT 50 amp 1000 volt VQE 13 vqe 14
Text: MOTOROLA Order this document! by MHPM7A16A120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 3.0 hp Motor Drives MHPM7A16A120B This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A16A120B/D
MHPM7A15S120DC3)
b3b7255
VQE 24
vqe 24 e
VQE 23 E
vqe 21 f ad
vqe 24 d
12v to 220 v ac inverter
MHPM7A16A120B
IGBT 50 amp 1000 volt
VQE 13
vqe 14
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ZPD 5.1 ITT
Abstract: ITT ZPD 7.5 ITT ZPD 3.9 ZPD18 ITT zpd 3.3 itt ZPD ITT zener diode 3 3 ITT ZPD 4.3 ZPD13 ITT Zener diode itt diode zener 182
Text: MOTOROLA SC DIODES/OPTO D • 3b725S 00653^1 bO S ■ Section 4.2.4 Data Sheets Zener Voltage Regulator Diodes Section 4.2.4.1 Axial Leaded SECTION 4.2.4.1.1 500 mW DO-35 GLASS M U L T IP L E P A C K A G E Q U A N T IT Y (M P Q ) R E Q U IR E M E N T S
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DO-35
1N746A
1N759A,
1N957B
1N992B,
1N4370A
1N4372A
1N4678
1N4717
ZPD 5.1 ITT
ITT ZPD 7.5
ITT ZPD 3.9
ZPD18 ITT
zpd 3.3 itt
ZPD ITT zener diode 3 3
ITT ZPD 4.3
ZPD13 ITT
Zener diode itt
diode zener 182
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MC100EL32
Abstract: DL140 MC10EL32
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA -s-2 Divider M C10EL32 M C100EL32 T h e M C 1 0 E L /1 0 0 E L 3 2 is an integrated + 2 divider. T h e differential clock inputs and th e V b b allow a differential, single-ended or A C coupled interface to the device. If used, th e V b b output should be bypassed to
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MC10EL/100EL32
DL140
MC100EL32
DL140
MC10EL32
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ZENER DIODE WITH 5 VOLTS OUTPUT
Abstract: 20M diode zener LK 8CA 8CA LZ DIODE MLL5221A MLL5222A MLL5223A MLL5224A MLL5225A MLL5226A
Text: MOTOROLA SC 1EE D I ti3b7aSS □□7CH 0 0 1 -CDIO DES/O PTOï - 1T -1 MLL5221A thru MLL5270A MOTOROLA SEM ICON DUCTOR TECHNICAL DATA LEADLESS GLASS ZENER D IO D ES 5 0 0 M IL LIW A TT H E R M E T IC A LL Y S EA L E D G L A S S S IL IC O N Z E N E R D IO D E S
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MLL5221A
MLL5270A
MLL5221A
TA-25Â
ZENER DIODE WITH 5 VOLTS OUTPUT
20M diode zener
LK 8CA
8CA LZ DIODE
MLL5222A
MLL5223A
MLL5224A
MLL5225A
MLL5226A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T A m p lifie rs BFR30LT1 BFR31LT1 N-Channel 2 SOURCE 1 2 CASE 3 1 8 -0 8 , STYLE 10 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Value Unit D rain-Source Voltage VdS 25 Vdc G a te -S o u rce Voltage vgs 25 Vdc Symbol
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BFR30LT1
BFR31LT1
-236A
3b725S
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GFM 19 TVS
Abstract: GFM 16A GFM 51A MOTOROLA 727 36A GFM 36A GGG 62A GFM TVS SMC GFK 12A 447 gev GFM 13A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors The SMC series Is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low
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