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    MTB3N60E1 Search Results

    MTB3N60E1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTB3N60E1 On Semiconductor TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate D2PAK-SL Straight-Leaded Th Original PDF

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    TMOS E-FET

    Abstract: 418C MTB3N60E1
    Text: MOTOROLA Order this document by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK–SL Straight–Leaded


    Original     		PDF MTB3N60E1/D MTB3N60E1 TMOS E-FET 418C MTB3N60E1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order th is docum ent by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded


    OCR Scan     		PDF MTB3N60E1/D MTB3N60E1 418C-01 3b725S

    transistor d 965 al

    Abstract: No abstract text available
    Text: iNàiiììian MOTOROLA Order this document by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TM OS E-FET High Energy Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded


    OCR Scan     		PDF MTB3N60E1/D 1-800-W1-2447 transistor d 965 al