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    3AS TRANSISTOR Search Results

    3AS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3AS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3BS transistor

    Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
    Text: BC856T PNP Silicon AF Transistor Preliminary data 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75


    Original     		PDF BC856T BC856AT BC856BT VPS05996 EHP00381 EHP00380 Jan-08-2002 EHP00382 EHP00379 3BS transistor transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data

    3BS transistor

    Abstract: No abstract text available
    Text: BC856T PNP Silicon AF Transistor Preliminary data 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75


    Original     		PDF BC856T VPS05996 BC856AT BC856BT 3BS transistor

    3BS transistor

    Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.


    Original     		PDF BC856W/BC857W/BC858W 200mW) OT-323 BC856W BC857W BC858W 3BS transistor marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W

    C2335

    Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
    Text: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN


    Original     		PDF Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 C2335 Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw

    C1507

    Abstract: BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887
    Text: PNP Silicon AF Transistors BC 856 . BC 860 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 NPN


    Original     		PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 C1507 BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887

    BC850

    Abstract: BC856 BC856A BC856B BC857A BC860 BC846 BC847 BC848 BC849
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


    Original     		PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC850 BC856 BC856A BC856B BC857A BC860 BC846 BC847 BC848 BC849

    H12E

    Abstract: VSO05561 marking 3GS 858W
    Text: BC 856W . BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2


    Original     		PDF VSO05561 856AW OT-323 856BW 857AW 857BW 857CW H12E VSO05561 marking 3GS 858W

    BC sot23

    Abstract: sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23
    Text: BC 856 . BC 860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846, BC 847, BC 848 2 BC 849, BC 850 NPN


    Original     		PDF OT-23 Sep-28-1999 120Hz BC sot23 sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23

    BC846

    Abstract: BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


    Original     		PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC846 BC847 BC848 BC849 BC850 BC856 BC856A BC856B BC857A BC860

    BC846W

    Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW OT323 BC846W BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W

    BC856B E6327

    Abstract: BC846 Infineon BC856-BC860 BC857 st DIN 6784 power 22E BC856B BC857A BC860 BC846
    Text: BC856.BC860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN


    Original     		PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC856B E6327 BC846 Infineon BC856-BC860 BC857 st DIN 6784 power 22E BC856B BC857A BC860 BC846

    H12E

    Abstract: 4Gs SOT23 3JS 1.5-R bc857b infineon 3ls sot23
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


    Original     		PDF BC856. BC860 BC846, BC847, BC848 BC849, BC850 VPS05161 BC856A BC856B H12E 4Gs SOT23 3JS 1.5-R bc857b infineon 3ls sot23

    Untitled

    Abstract: No abstract text available
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW BC856BW

    TO205AD

    Abstract: 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866 2N4428
    Text: IF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE 145A-09 (.300” Stud) CASE 215-02 CASE 244-04 (.280" Stud) CASE 79-03 (TO-205 Type) CASE 305-01 (.204" Stud) CASE 305A-01 (.204” Pill) 3ASÊ 316-01 For UHF Applications


    OCR Scan     		PDF O-205AD O-205 05A-01 MRF313, 2N6439 T0-205 MRF525* 2N4428 2N5160f TO205AD 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866

    KRC102M transistor

    Abstract: Transistor KRC102M KRC104M KRC102M 106M KRC105M KRC106M KRC101M KRC103M
    Text: KRC101MSEMICONDUCTOR KRC106M EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC101M-KRC106M KRC101M KRC102M KRC103M KRC104M KRC105M KRC106M T0-92M KRC104M KRC105M KRC102M transistor Transistor KRC102M 106M

    Untitled

    Abstract: No abstract text available
    Text: TT T O S H I B A -CDISC R E T E / O P T 01 ßFliaTTaSQ 9097250 TOSHIBA <DISCRETE/OPTO> 99D 16804 TOSHIBA F IE L D SEMICONDUCTOR QQltäQ4 DT-39-\3 E FFE C T TRANSISTOR Y T F 2 5 0 SILIC O N N CHANNEL MOS TYPE TECHNICAL DATA 71 -MOS I HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF DT-39-\3 -100nA 250uA 02LOHAX -200V 00A/us

    BC 511

    Abstract: Q62702-C2295 MARKING 3FS
    Text: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,


    OCR Scan     		PDF Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 BC 511 MARKING 3FS

    bc856

    Abstract: bc 856
    Text: SIEM ENS PNP Silicon AF Transistors BC 856 . BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,


    OCR Scan     		PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 bc856 bc 856

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,


    OCR Scan     		PDF Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300

    bc847bc

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors BC 856. BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,


    OCR Scan     		PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 bc847bc

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 856 . BC 860 PNP Silicon AF Transistors F eatures • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: B C 846, BC 847,


    OCR Scan     		PDF Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 62702-C1698 Q62702-C1507 62702-C1887 62702-C1774

    2N4347

    Abstract: 3632N w15c
    Text: 2N 4347 NPN SILICON TRANSISTOR, HOMOBASE TRANSISTOR NPN SILICIUM , HOMOBASE LF large signal power amplification Amplification de puissance de grands signaux BF Thermal fatigue inspection Contrôle en fatigue thermique v CEO 120 V 5 A *tot 100 W Rth j-c


    OCR Scan     		PDF CB-19 2N4347 2N4347 3632N w15c

    bc 212 equivalent

    Abstract: MARKING CODE 21E SOT323
    Text: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,


    OCR Scan     		PDF Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 bc 212 equivalent MARKING CODE 21E SOT323

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA íDISCRETE/OPTO} _ ^ 9 0 97 25 0 TOSH IB A ¿/oSuhu ooibafl4 i DISCRETE/OPTO 90D 16284 DT-33-3S TOSHIBA OTR MODULE M G 2 0 0 H 2 C K 1 SEMICONDUCTOR SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF DT-33-3S fi200H2CKl