ISO 8015
Abstract: No abstract text available
Text: September 2008 HY[B/I]39S512400A[E/T] HY[B/I]39S512800A[E/T] HY[B/I]39S512160A[E/T] 512-Mbit Synchronous DRAM SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.53 Internet Data Sheet HY[I/B]39S512[40/80/16]0A[E/T] 512-Mbit Synchronous DRAM HY[B/I]39S512400A[E/T], HY[B/I]39S512800A[E/T], HY[B/I]39S512160A[E/T]
|
Original
|
PDF
|
39S512400A
39S512800A
39S512160A
512-Mbit
39S512
ISO 8015
|
hyb39s512400ae-7.5
Abstract: PC133-333 39S512 HYB39S512800AT-7.5 Qimonda AG HYB39S512400AT-7
Text: June 2007 HY[B/I]39S512400A[E/T] HY[B/I]39S512800A[E/T] HY[B/I]39S512160A[E/T] 512-Mbit Synchronous DRAM SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.52 Internet Data Sheet HY[I/B]39S512[40/80/16]0A[E/T] 512-Mbit Synchronous DRAM HY[B/I]39S512400A[E/T], HY[B/I]39S512800A[E/T], HY[B/I]39S512160A[E/T]
|
Original
|
PDF
|
39S512400A
39S512800A
39S512160A
512-Mbit
39S512
hyb39s512400ae-7.5
PC133-333
HYB39S512800AT-7.5
Qimonda AG
HYB39S512400AT-7
|
P-TSOPII-54
Abstract: PC133 registered reference design
Text: HYB39S512400/800/160AT L 512MBit Synchronous DRAM 512 MBit Synchronous DRAM Preliminary Datasheet April ’01 • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns
|
Original
|
PDF
|
HYB39S512400/800/160AT
512MBit
P-TSOPII-54
400mil
PC166
PC133
PC133 registered reference design
|
Untitled
Abstract: No abstract text available
Text: Data Sheet, Rev. 1.4, Jan. 2006 39S512400AT L HYB39S512800AT(L) HYB39S512160AT(L) 512-Mbit Synchronous DRAM SDRAM Memory Products Edition 2006-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2006.
|
Original
|
PDF
|
HYB39S512400AT
HYB39S512800AT
HYB39S512160AT
512-Mbit
P-TSOPII-54-1
10082003-L1GD-PVI5
|
MARKING BA SMD IC CODE 8-pin
Abstract: No abstract text available
Text: D a t a S he et , Rev. 1.22, N o v . 2 00 3 39S512400AT L HYB39S512800AT(L) HYB39S512160AT(L) 512Mbit Synchronous DRAM SDR SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2003-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
|
Original
|
PDF
|
HYB39S512400AT
HYB39S512800AT
HYB39S512160AT
512Mbit
P-TSOPII-54
GPX09039
MARKING BA SMD IC CODE 8-pin
|
SMD MARKING CODE A12
Abstract: P-TSOPII-54 10082003-L1GD-PVI5
Text: D a t a S h e e t , R e v. 1 . 3 , M ar c h 2 00 3 H Y B 39 S 5 1 2 4 0 0 A T L H Y B 39 S 5 1 2 8 0 0 A T ( L ) H Y B 39 S 5 1 2 1 6 0 A T ( L ) 512- Mbi t Synchr onous DRAM SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-03
|
Original
|
PDF
|
P-TSOPII-54
GPX09039
10082003-L1GD-PVI5
SMD MARKING CODE A12
P-TSOPII-54
10082003-L1GD-PVI5
|