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    RFMA2124-2W

    Abstract: No abstract text available
    Text: RFMA2124-2W-P3 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 01/09/2007 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm


    Original     		PDF RFMA2124-2W-P3 -39dBc 20dBm RFMA2124 RFMA2124-2W

    Untitled

    Abstract: No abstract text available
    Text: RFMA2124-2W 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 10/25/2006 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm


    Original     		PDF RFMA2124-2W -39dBc 20dBm RFMA2124

    RFMA2124-2W

    Abstract: power amplifier mmic
    Text: RFMA2124-2W 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 07/28/2006 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm


    Original     		PDF RFMA2124-2W -39dBc 20dBm RFMA2124 RFMA2124-2W power amplifier mmic

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology


    Original     		PDF SZA-3044 10mil EDS-103989 SZA-3044" SZA3044

    8G436

    Abstract: No abstract text available
    Text: K0!=3DBCAH0 C0=30A30E10G0D10>>C?A8=C K0)8G0)83430)784;38=6 K0)054CH064=2H04AC85820C8>=B K09F,0>A0D9,0!=?DC &60"0*&20& ,&-21020D//+)$"2).-1 *4;42>< 0C02>< 'A>24BB0>=CA>; '.EC-0)4A84B )8=6;400=30D0;0&DC?DC0 EC-090>=E4AC4AB '.EC-040CDA4B00=304=458CB


    Original     		PDF 30A30E10G0D10 054CH0 4AC85820C8> -21020D//+ 24BB0 4A84B 40CDA4B00 458CB 40CDA4B 8G436

    8C430

    Abstract: 8G435 CD50B
    Text: K0 =3DBCAH0 C0=30A30CM0G0CM00>>C?A8=C K08E,0>A0C8,0 =?DC K0'8=030)DA50240$>D=C0$>34;B K0558284=2H0D?0C>02 K08G430BF8C278=60A4@D4=2H "10,&".0"$ ").-010A+'% .%*)*4;42><A0C2>< 'A>24BB0>=CA>; -8A4;4BB0%4CF>A: $40BDA4<4=C030*4BC '.C0)4A84B


    Original     		PDF 30A30CM0G0CM00 DA50240$ 8G430BF8C278 -010A+ 24BB0 4A84B 40CDA4B00 458CB 40CDA4B DA50240< 8C430 8G435 CD50B

    Untitled

    Abstract: No abstract text available
    Text: RFPA1002 RFPA1002 9.8GHz to 13.5GHz High Linearity 9.8GHz TO 13.5GHz HIGH LINEARITY POWER AMPLIFIER Package: Ceramic QFN, 40-pin, 6mm x 6mm x 0.95mm 40 Features 39 38 37 36 Vd1 35 Vg2 34 33 Vd2a 32 31 1 30 2 GND 29 3 28 RFin  Frequency Range: 9.8GHz to


    Original     		PDF RFPA1002 40-pin, 17dBm 50dBc 22dBm 39dBc 25dBm 32dBc

    Untitled

    Abstract: No abstract text available
    Text: AIM & THURLBY THANDAR INSTRUMENTS TGR6000 6GHz RF signal generator - CW with sweep 10MHz to 6,000MHz at -110Bm to +7dBm High purity output with low phase noise Custom level trim of up to 100 points Fast full-range sweep using step or list modes Remote control via RS232, USB, GPIB and LAN interfaces


    Original     		PDF TGR6000 10MHz 000MHz -110Bm RS232, TGR6000

    transistor 10mhz 60w

    Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf

    Cree Microwave

    Abstract: UGF21060 UGF21060F UGF21060P
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		PDF UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P

    Untitled

    Abstract: No abstract text available
    Text: 8885D:8C3:7;0<13082><93C< B6 C D K0A&  0=30  ><?;80=C0#>34;B K0,8340'0=6400 =?DC K0#43820;04AC85820C8>=B ':0#3,'50' .'/54010E11-+%#5+0/4 #43820;60 =3DBCA80;0><?DC8=66 "8540(284=24B090"01>A0C>AH )#F70(4A84B EA,0C>0F,0#43820;0070GC4A=0;0&>F4A0(D?;84B


    Original     		PDF 8885D 4AC85820C8> /54010E11-+ 3DBCA80 24B090 4A84B 40CDA4B00 458CB 40CDA4B

    RF FET transistor

    Abstract: fet transistor rf
    Text: MAPL-000822-002PP LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V Discontinued For Reference Only Product Image Designed for broadband commercial applications up to 2.2GHz • • • High gain, high efficiency and high linearity Ease of design for gain and insertion phase flatness


    Original     		PDF MAPL-000822-002PP 17GHz, 28Vdc 28dBm -39dBc 11GHz 960MHz, 26Vdc, 960MHz QFN-16 RF FET transistor fet transistor rf

    RF7321

    Abstract: band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE
    Text: RF7321 3V LTE Band 11, 21 Linear PA Module Package Style: Module, 10-Pin, 3mm x 3mm x 0.8mm Features            Fully Compliant to LTE Modulation LTE Bands 11, 21 Best-in-Class Efficiency 47%, +28.5dBm Rel 99 output power High Power Gain : 28dB


    Original     		PDF RF7321 10-Pin, -38dBc -39dBc RF7321 203mm 330mm 025mm DS120906 band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE

    transistor z9

    Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
    Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package


    Original     		PDF RT240PD 40dBm 14GHz 900MHz IMT-2000 RT240PD IMT-2000, 14iminary transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF

    Untitled

    Abstract: No abstract text available
    Text: 19-4588; Rev 0; 4/09 KIT ATION EVALU E L B AVAILA 2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver The MAX2839AS direct conversion, zero-IF, RF transceiver is designed specifically for 2.3GHz to 2.7GHz 802.16e MIMO mobile WiMAX systems. The device incorporates one transmitter and two receivers, with > 40dB isolation between each receiver. The MAX2839AS


    Original     		PDF MAX2839AS MAX2839AS W733A5

    MAX2838

    Abstract: mobile jammer mobile signal jammer rf traNsmitter receiver 40mhz antenna wimax 3800 jammer circuit diagram mobile jammer circuit RF Transceiver mimo wimax spectrum mask 2048-FFT
    Text: 19-1049; Rev 1; 8/08 3.3GHz to 3.9GHz Wireless Broadband RF Transceiver Features The MAX2838 direct-conversion, zero-IF, RF transceiver is designed specifically for 3.3GHz to 3.9GHz wireless broadband systems. The MAX2838 completely integrates all circuitry required to implement the RF


    Original     		PDF MAX2838 mobile jammer mobile signal jammer rf traNsmitter receiver 40mhz antenna wimax 3800 jammer circuit diagram mobile jammer circuit RF Transceiver mimo wimax spectrum mask 2048-FFT

    BLC5G22LS-100

    Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180
    Text: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA amplifier efficiency For RF power amplifiers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for


    Original     		PDF

    AN1997

    Abstract: APP1997 MAX2510
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Apr 28, 2003 Keywords: rf, phs, transceiver, wireless, rfic, spectrum APPLICATION NOTE 1997 500mW PHS Transmitter Meets Transient Spectrum Requirements with Edge Control Abstract: If the control signal's transition time is not controlled, the output spectrum of a 500mW PHS base


    Original     		PDF 500mW MAX2510, MAX2510 200mW com/an1997 MAX2510: AN1997, APP1997, AN1997 APP1997

    cdma power meter block diagram

    Abstract: D-Sub 9-pin female connector RoHS E4418B E4440A IFR3414 agilent E4440A
    Text: Power Amplifier RFP-0881-45-48GD Product Features Application • GaN on SiC + Doherty Technology • High Efficiency • Solid-state Linear Design • Suitable for CDMA / LTE • 50 Ohm Input/Output Impedance • High Reliability and Ruggedness • Built in Output Isolator


    Original     		PDF RFP-0881-45-48GD 894MHz 25MHz IS-95A, IS-95A cdma power meter block diagram D-Sub 9-pin female connector RoHS E4418B E4440A IFR3414 agilent E4440A

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    Untitled

    Abstract: No abstract text available
    Text: K0=3DBCAH0 C0=30A30CE0&8=08?0&02:064 K08E40(83430(784;38=6 K0,8340'0=640EB0=?DC K0D8D60F60BC60BF0+>;C0%DC?DCB K0&8=020(DA50240#>D=C0#>34;B *;0&4.*60 *,0*16503033/-(&6-215 4;42>< 0C02>< 02C>AH0DC><0C8>=020&A>24BB0>=CA>; &-AF0(4A84B (8=6;400=30D0;0%DC?DC0F,0


    Original     		PDF 30A30CE0 K0D8D60F60BC60BF0+ DA50240# 24BB0 4A84B 40CDA4B00 458CB 40CDA4B 8340A0

    Untitled

    Abstract: No abstract text available
    Text: 8885D:8C3:7;0<13082><93C< B6 C D K0A&  0=30  ><?;80=C0#>34;B K0,8340'0=6400 =?DC K0#43820;04AC85820C8>=B ':0#3,'50' .'/54010E11-+%#5+0/4 #43820;60 =3DBCA80;0><?DC8=66 "8540(284=24B090"01>A0C>AH )#BBA70(4A84B A,0C>0BBA,0#43820;0070GC4A=0;0&>F4A0(D?;84B


    Original     		PDF 8885D 4AC85820C8> /54010E11-+ 3DBCA80 24B090 4A84B 40CDA4B00 458CB 40CDA4B

    RF Transceiver mimo

    Abstract: max2839 MAX2839AS mobile jammer mobile signal jammer WiMAX RF Transceiver mimo rf bpf s band 2.65 ghz to 2.70 ghz 23GHz filter MOBILE jammer circuit diagram MOTOROLA 7839
    Text: 19-4588; Rev 1; 5/10 KIT ATION EVALU E L B AVAILA 2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver The MAX2839AS direct conversion, zero-IF, RF transceiver is designed specifically for 2.3GHz to 2.7GHz 802.16e MIMO mobile WiMAX systems. The device incorporates one transmitter and two receivers, with > 40dB isolation between each receiver. The MAX2839AS


    Original     		PDF MAX2839AS MAX2839AS RF Transceiver mimo max2839 mobile jammer mobile signal jammer WiMAX RF Transceiver mimo rf bpf s band 2.65 ghz to 2.70 ghz 23GHz filter MOBILE jammer circuit diagram MOTOROLA 7839