ASTM-D-1457
Abstract: ASTMD1457 astm-d1457 ASTM-D-196
Text: DASH NO. M CODE MADE FROM GSD REVISIONS CN 34902 C REDRAWN JCA 10/01/93 o I to CN 38485 E TML 02/22/02 OJ I o CD WAS: JCA4375 LC9306S 4:1 sc a le APPROX SURFACE AREA NOTES: 1. MATERIALS: INSULATORS: TEFLON, ASTM-D-1457 GASKET: SIL. RUB. QQ-R-765 OUTER CONTACT
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JCA4375
LC9306S
ASTM-D-1457
QQ-R-765
ASTM-D-196
ASTM-B16
QQ-S-365
LC--93--06
ASTMD1457
astm-d1457
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Untitled
Abstract: No abstract text available
Text: ROHS COMPLIANT PRODUCT DATA DRAWING REVISION HISTORY DESCRIPTION DATE APPROVED - DCN 38485 08/11 STW A DCN 38589 09/11 STW REV .289 7.34 .287 7.29 .132 3.35 .142 3.61 RP .088 2.24 6X .096 2.44 2X .024 0.61 2X .135 3.43 MATERIAL: INTERFACE BODIES: LEGGED BODY,
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AMS-5640,
S30300,
C17300,
D1710,
MIL-STD-10.
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HL6525MG
Abstract: No abstract text available
Text: HL6525MG Visible High Power Laser Diode for Recordable-DVD ODE-208-1602G Z Rev.7 Mar. 2005 Description The HL6525MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as Recordable-DVD, and
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HL6525MG
ODE-208-1602G
HL6525MG
100ns,
HL6525MG:
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LA4705
Abstract: EN3848D SIP18H SANYO car amplifier ic CATALOG
Text: Ordering number: EN3848D Monolithic Linear IC LA4705 15 W 2-channel BTL AF Power Amplifier for Car Stereos Overview Package Dimensions unit: mm 3109-SIP18H [LA4705] 37.0 4.5 30.0 CC L . . 6.0 . High power: supports total output of 25 W + 25 W = 14.4 V, THD = 30%, R = 4 Ω
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EN3848D
LA4705
3109-SIP18H
LA4705]
pop14
LA4705
EN3848D
SIP18H
SANYO car amplifier ic CATALOG
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HL6714G
Abstract: No abstract text available
Text: HL6714G AlGaInP Laser Diode ODE-208-192C Z Rev.3 Jan. 2003 Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical
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HL6714G
ODE-208-192C
HL6714G
HL6714G:
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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HL6724MG
Abstract: OPNEXT
Text: HL6724MG AlGaInP Laser Diode ODE-208-261E Z Rev.5 Jan. 2003 Description The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser pointers and optical equipments for amusement.
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HL6724MG
ODE-208-261E
HL6724MG
HL6724MG:
OPNEXT
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TR6143
Abstract: advantest TR6143 opnext laser diode HP6655A apc driver for laser diode DESIGN AC VOLTMETER USING TWO DIODE Tektronix TDS 460A manual LDC-3722B infrared laser diode AM503
Text: ODE-608-001B Z Opnext Laser Diodes Surge Damage Prevention Manual Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility
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ODE-608-001B
TR6143
advantest TR6143
opnext laser diode
HP6655A
apc driver for laser diode
DESIGN AC VOLTMETER USING TWO DIODE
Tektronix TDS 460A manual
LDC-3722B
infrared laser diode
AM503
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m15733
Abstract: N5600 N4200 N2200 N4700 N1500 N330 P100 N56002 MIL-C-81
Text: TEMPERATURE COMPENSATING PlOO THRU N750 EXTENDED TEMPERATURE COMPENSATING N1500 THRU N5600 TEM PER A TU R E °C TEM PER A TU R E °C EXPANDED TC LIMITS FOR /nnm/- n LOW CAPACITANCE VALUES ' pp ' ’ T e m p e ra tu re C a p a c it a n c e : C a p a c it a n c e
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N1500
N5600
MIL-C-81
MIL-C-39014
m15733
N5600
N4200
N2200
N4700
N330
P100
N56002
MIL-C-81
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Untitled
Abstract: No abstract text available
Text: HL6347MG/48MG ODE-208-019 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6347MG/48MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
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HL6347MG/48MG
HL6347MG/48MG
ODE-208-019
HL6347MG/48MG:
HL6347MG
HL6348MG
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208017
Abstract: No abstract text available
Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
HL6312G/13G
ODE-208-017
HL6312G/13G:
HL6312G
HL6313G
208017
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Untitled
Abstract: No abstract text available
Text: HL6316G ODE-208-026 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6316G is a 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser pointers and optical equipment. Features •
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HL6316G
HL6316G
ODE-208-026
HL6316G:
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Untitled
Abstract: No abstract text available
Text: HL6360MG/61MG ODE-208-010B Z Rev.2 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6360MG/61MG
HL6360MG/61MG
ODE-208-010B
HL6360MG/61MG:
HL6360MG
HL6361MG
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Untitled
Abstract: No abstract text available
Text: HL6554MG ODE-208-036B Z Rev.2 May 17, 2006 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.
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HL6554MG
HL6554MG
ODE-208-036B
HL6554:
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2e474
Abstract: 2E473M 2E104 2e333 2E223 2E224 2E103 2E-823 2E562 2E563M
Text: FILM CAPACITORS FOR RADIO INTERFERENCE SUPPRESSION • Standard Ratings M etallized Polyester Film C apacito rs FADE-SERIES P a r t No. FADE2E103K FADE2E153K FADE2E223K FADE2E333K FADE2E473K FADE2E683K FADE2E104K FADE2E154K FADE2E224K FADE2E334K FADE2E474K
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250Vac
FADE2E103K
FADE2E153K
FADE2E223K
FADE2E333K
FADE2E473K
FADE2E683K
FADE2E104K
FADE2E154K
FADE2E224K
2e474
2E473M
2E104
2e333
2E223
2E224
2E103
2E-823
2E562
2E563M
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Semicon volume 1
Abstract: AWM 2851 VW-1 AWM 2835 cable
Text: Industrial Cable S ERV IN G IN DU STR I AL , SP ECI ALT Y AN D COMMERCI AL AP P LI CATI O N S APRIL 2015 What’s New? Industrial Serving Industrial, Specialty and Commercial Applications GENFREE II LOW-SMOKE, ZERO-HALOGEN CABLE S This catalog contains indepth information on the
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INS-0043-R0415
Semicon volume 1
AWM 2851 VW-1
AWM 2835 cable
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HL6501MG
Abstract: opto device
Text: HL6501MG Visible High Power Laser Diode ODE-208-515I Z Rev.9 Jan. 2003 Description The HL6501MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-R, and
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HL6501MG
ODE-208-515I
HL6501MG
HL6501MG:
opto device
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HE8807FL
Abstract: HE8807SG
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998A Z Rev.1 Jan. 2003 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width
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HE8807SG/FL
ODE-208-998A
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
HE8807FL
HE8807SG
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HL6722G
Abstract: No abstract text available
Text: HL6722G AlGaInP Laser Diode ODE-208-220D Z Rev.4 Jan. 2003 Description The HL6722G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for bercode scanner, and various other types of optical equipment.
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HL6722G
ODE-208-220D
HL6722G
HL6722G:
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HL6364DG
Abstract: HL6365DG
Text: HL6364DG/65DG ODE-208-060 Z Low Operating Current Visible Laser Diode Preliminary Rev.0 May 17, 2006 Description The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6364DG/65DG
ODE-208-060
HL6364DG/65DG
HL6364DG/65DG:
HL6364DG
HL6365DG
HL6364DG
HL6365DG
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HL6545MG
Abstract: opnext
Text: HL6545MG Visible High Power Laser Diode for Recordable-DVD ODE-208-038C Z Rev.3 Feb. 24, 2006 Description The HL6545MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as H/H type Recordable-DVD, and various
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HL6545MG
ODE-208-038C
HL6545MG
HL6545MG:
opnext
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HL6548FG
Abstract: No abstract text available
Text: HL6548FG ODE-208-015C Z Rev.3 Mar. 13, 2006 Visible High Power Laser Diode Description The HL6548FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment.
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HL6548FG
ODE-208-015C
HL6548FG
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HL6325G
Abstract: HL6326G
Text: HL6325G/26G Low Operating Current Visible Laser Diode ODE-208-781C Z Rev.3 Jan. 2003 Description The HL6325G/26G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
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HL6325G/26G
ODE-208-781C
HL6325G/26G
HL6325G/26G:
HL6325G
HL6325G
HL6326G
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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