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    37 SMD TRANSISTOR Search Results

    37 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    37 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C945 p 331

    Abstract: B1-C90/20 TRANSISTOR K1006 siemens MKL T60405-R6131-X037 t60405-s4615-x027 c945 p 331 transistor transistor C5478 siemens PTC C860 T60405-A4220-X060
    Text: Ordering Information Subject Index 5 11 A Chokes and Transformers SMD Transformers Ferrites and Accessories 15 29 37 B Thick-Film Chip Resistors NTC Thermistors PTC Thermistors Varistors Surge Arresters 121 127 143 155 167 C Ceramic Capacitors Film Capacitors


    Original     		PDF A0297 C945 p 331 B1-C90/20 TRANSISTOR K1006 siemens MKL T60405-R6131-X037 t60405-s4615-x027 c945 p 331 transistor transistor C5478 siemens PTC C860 T60405-A4220-X060

    ic smd 851

    Abstract: KPA1890 transistor P 24 smd
    Text: IC IC SMD Type MOS Field Effect Transistor KPA1890 TSSOP-8 Features Unit: mm Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS on 1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 m


    Original     		PDF KPA1890 ic smd 851 KPA1890 transistor P 24 smd

    transformer egston

    Abstract: 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical
    Text: AN2844 Application note 15 W wide range SMPS for metering based on ESBT STC03DE220HV and L6565 PWM controller 1 Introduction This document describes a 15-W flyback switched mode power supply SMPS application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and


    Original     		PDF AN2844 STC03DE220HV L6565 STC03DE220HV) STEVAL-ISA057V1 transformer egston 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical

    COIL metal detector schematic

    Abstract: SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04
    Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V


    Original     		PDF STEVAL-IFS004V1 TDE0160 TDE0160, COIL metal detector schematic SMD HF transistor transistor smd CF rs smd transistor NF NV SMD TRANSISTOR B82462-4683K TDE0160 TDE0160FP electronic schematic SMD TRANSISTOR ALL 04

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-IFS004V1 Metal body proximity detector based on the TDE0160 Data Brief Features • Supply voltage: +4 V to +36 V ■ Supply current: <1.2 mA ■ Loss resistance: 5 kΩ to 50 kΩ ■ Oscillator frequency: <1 MHz ■ Output transistor: IC= 20 mA, VCE sat < 1.1 V


    Original     		PDF STEVAL-IFS004V1 TDE0160 TDE0160,

    transistor 2N3906 smd 2A SOT23

    Abstract: BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23
    Text: Contents Chips/Dice Package Outline Drawings Page # Axial Glass/Plastic Packages Package Outline Drawings Page # … Leaded Plastic Packages Chips/Dice for Diodes 2 DO-35 50 KBPC 60 Chips/Dice for Transistors 2 DO-41 50 KBPC-6 60 Products for CFL/TL Ballasts


    Original     		PDF DO-35 DO-41 DO-15 DO-201AD DO-41P 200mW OD-80C LL-34 transistor 2N3906 smd 2A SOT23 BC327-40 SMD pin configuration transistor BC547 smd packaging DIAC DB2 BC547 smd packaging bd469 W04M pin configuration A1941 C5198 application notes D1 DB2 Diac w33 SMD sot 23

    pin configuration transistor BC547 smd packaging

    Abstract: BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe
    Text: Quick Reference Data Chip/Dice – Diffused Silicon Wafers Surface Mount Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors


    Original     		PDF DO-35 DO-41 C-120 0406-3K pin configuration transistor BC547 smd packaging BC547 smd packaging BD469 C2N3904 c5198 CMJE2955T transistor mcr100-8 BC337 TO-92 Generic DIAC DB2 BC337 hie hre hfe

    2SA1369

    Abstract: G marking smd transistor 1A 9 g400h smd transistor 2sc3439 transistor smd marking H 2SC3439 SMD BR BR SMD IC 2SC3439 1a
    Text: Transistors SMD Type Plunger Drive Applications 2SA1369 Features High Collector Current ICM = -3A, IC = -1.5A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SA1369 500mW 2SC3439 Cut--20 -500mA -20mA 2SA1369 G marking smd transistor 1A 9 g400h smd transistor 2sc3439 transistor smd marking H 2SC3439 SMD BR BR SMD IC 2SC3439 1a

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification KDB6030L TO-263 1 .2 7 -0+ 0.1.1 Features +0.2 4.57-0.2 Low Crss typical 175 pF . 5 .2 8 -0+ 0.2.2 Fast switching speed. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2


    Original     		PDF KDB6030L O-263

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type N-Channel Logic Level Enhancement Mode Field Effect Transistor KDB6030L TO-263 1 .2 7 -0+ 0.1.1 Features +0.2 4.57-0.2 Low Crss typical 175 pF . 5 .2 8 -0+ 0.2.2 Fast switching speed. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2


    Original     		PDF KDB6030L O-263

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    C5750X7R1H106M

    Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
    Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table

    transistor SMD t4

    Abstract: PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143X PDTC143XT PDTC143XE transistor SMD t4 PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X

    5n20v

    Abstract: No abstract text available
    Text: Transistors SMD Type Dual N-Channel Enhancement Mode MOSFET 5N20V TSSOP-8 • Features Unit: mm ● RDS ON ≤40mΩ @VGS=4.5V ● RDS(ON)≤45mΩ @VGS=2.7V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2


    Original     		PDF 5N20V 5n20v

    Untitled

    Abstract: No abstract text available
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08

    4P04L08

    Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08

    smd 1C

    Abstract: 1c smd transistor 1b smd transistor SMD Transistor nc KDS8928A SMD Transistor 1c 1130 pch Dual N & P-Channel MOSFET
    Text: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS ON = 0.030 RDS(ON) = 0.038 @ VGS = 4.5V @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V


    Original     		PDF KDS8928A smd 1C 1c smd transistor 1b smd transistor SMD Transistor nc KDS8928A SMD Transistor 1c 1130 pch Dual N & P-Channel MOSFET

    4P0409

    Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
    Text: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3

    IPP120P04P4-04

    Abstract: 340ua IPI120P04P4-04 4P04
    Text: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4-04 IPP120P04P4-04 340ua 4P04

    2SK3560

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel power MOSFET 2SK3560 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching


    Original     		PDF 2SK3560 O-263 2SK3560

    Untitled

    Abstract: No abstract text available
    Text: mm/ Features 1. î M M t t Q M D i m m M & r J W X 37ï?o tä^cDämmm 2. ^ y y v o y ^ - i ^ ^ y i j y 3. J 7 D - [ i ^ m hs 1. Developed as a chip-type SMD Photo-transistor 2. Automatic mounting by chip mounter available 3. Reflow soldering available o


    OCR Scan     		PDF

    bc327 smd

    Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
    Text: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A


    OCR Scan     		PDF BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C bc327 smd bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd

    smd transistor 43t

    Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
    Text: Infineon , m proved technologies BUZ102S ' SIPMOS Power Transistor Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance ñ D S o n • Avalanche rated Continuous drain current b CO Features 55 V 0.018


    OCR Scan     		PDF BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor smd code book transistor 43t SMD G1333

    SMD TRANSISTOR MARKING 76

    Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
    Text: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.


    OCR Scan     		PDF