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    2SK3560 Search Results

    2SK3560 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3560 Kexin N-Channel Power MOSFET Original PDF
    2SK3560 Panasonic Silicon N-channel power MOSFET For PDP/For high-speed switching Original PDF

    2SK3560 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3560

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon N-channel power MOSFET 2SK3560 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching


    Original
    PDF 2SK3560 O-263 2SK3560

    2sk3560

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm • Absolute Maximum Ratings TC = 25°C VDSS 230 V Gate-source surrender voltage VGSS ±30 V Drain current ID 30 A Peak drain current


    Original
    PDF 2002/95/EC) 2SK3560 O-220C-G1 2sk3560

    A819

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm 3.0±0.5 0 to 0.5 • Low on-resistance, low Qg • High avalanche resistance 0.6±0.1 • Features 1.4±0.1 2.5±0.2 0.8±0.1 M Di ain


    Original
    PDF 2002/95/EC) 2SK3560 A819

    2SK3560

    Abstract: No abstract text available
    Text: Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm • Absolute Maximum Ratings TC = 25°C VDSS 230 V Gate-source surrender voltage VGSS ±30 V Drain current ID 30 A Peak drain current IDP 120 A PD 50 W Ta = 25°C 0 to 0.3 10.2 (8.9) Unit Drain-source surrender voltage


    Original
    PDF 2SK3560 O-220C-G1 2SK3560

    2SK3560

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3560 Silicon N-channel power MOSFET Unit: mm • Absolute Maximum Ratings TC = 25°C Rating 0.6±0.1 1.5±0.3 0 to 0.3 (10.2) (8.9) Unit Drain-source surrender voltage VDSS 230


    Original
    PDF 2002/95/EC) 2SK3560 2SK3560

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928