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    HY5DU283222Q

    Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
    Text: HY5DU283222Q 128M 4Mx32 GDDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02


    Original     		PDF HY5DU283222Q 4Mx32) 222MHz 200/183MHz 166MHz 250MHz 100pin HY5DU283222Q HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55

    DA65

    Abstract: K4D263238M-QC40 K4D263238 K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
    Text: Target 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 0.3 June 2000 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238M 128Mbit 32Bit 250MHz DA65 K4D263238M-QC40 K4D263238 K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60

    K4D263238M-QC40

    Abstract: K4D263238
    Text: Preliminary 128M DDR SDRAM K4D263238M 222 / 250 MHz 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.1 March 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238M 128Mbit 32Bit K4D263238M-QC40 K4D263238M-QC45 K4D263238M-QC50 25tCK K4D263BAa K4D263238

    K4D623238B-QC50

    Abstract: No abstract text available
    Text: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.0 June 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D623238B-QC 64Mbit 32Bit 100-Pin K4D623238B-QC60 K4D623238B-QC50

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) 256Mb

    Untitled

    Abstract: No abstract text available
    Text: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02


    Original     		PDF HY5DU283222Q 4Mx32) 222MHz 200/183MHz 166MHz 250MHz 100pin

    K4D623238B-GC45

    Abstract: No abstract text available
    Text: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D623238B-GC 64Mbit 32Bit 144-Ball K4D623238B-GL* 100MHz K4D623238B-GC45/-50/-55/-60 K4D623238B-GC33 K4D623238B-GC45

    Untitled

    Abstract: No abstract text available
    Text: HY5DU663222Q 64M 2Mx32 DDR SDRAM HY5DU663222Q Revision 0.8 March 2001 Rev. 0.8 / Mar. 2001 This document is a general product description and is subject to change without notice. 64Mb (2Mx32) Double Data Rate SDRAM HY5DU663222Q CONTENTS 1. 2Mx32 DDR SDRAM Brief Information - 3


    Original     		PDF HY5DU663222Q 2Mx32) 2Mx32

    Untitled

    Abstract: No abstract text available
    Text: HY5DV641622AT 64M 4Mx16 DDR SDRAM HY5DV641622AT Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3


    Original     		PDF HY5DV641622AT 4Mx16) 4Mx16

    Untitled

    Abstract: No abstract text available
    Text: HY5DU641622AT 64M 4Mx16 DDR SDRAM HY5DU641622AT Revision 0.6 April 2001 Rev. 0.6 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DU641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3


    Original     		PDF HY5DU641622AT 4Mx16) 4Mx16

    Untitled

    Abstract: No abstract text available
    Text: HY5DU643222AQ 64M 2Mx32 DDR SDRAM HY5DU643222AQ Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (2Mx32) Double Data Rate SDRAM HY5DU643222AQ CONTENTS 1. 2Mx32 DDR SDRAM Brief Information - 3


    Original     		PDF HY5DU643222AQ 2Mx32) 2Mx32

    K4D62323HA

    Abstract: k4d62323ha-qc60 samsung ddr-3
    Text: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.1 February 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D62323HA 64Mbit 32Bit K4D62323HA-QC50 K4D62323HA-* conditions10) 4Mx32 2Mx32 K4D62323HA k4d62323ha-qc60 samsung ddr-3

    HY5DU283222Q

    Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
    Text: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02


    Original     		PDF HY5DU283222Q 4Mx32) 200MHz 250/222MHz 300mA 370mA 200/183MHz HY5DU283222Q HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55

    K4D623238B-QC50

    Abstract: No abstract text available
    Text: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D623238B-QC 64Mbit 32Bit 100-Pin K4D623238B-QL* 100MHz K4D623238B-QC60 K4D623238B-QC50

    hy5du663222

    Abstract: HY5DU663222Q-6
    Text: HY5DU663222Q 64M 2Mx32 DDR SDRAM HY5DU663222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.9/ Dec. 01


    Original     		PDF HY5DU663222Q 2Mx32) HY5DU663222 864-bit 2Mx32 100pin HY5DU663222Q-6

    Untitled

    Abstract: No abstract text available
    Text: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.6 January 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D623238B-GC 64Mbit 32Bit 144-Ball K4D623238B-GC40

    Untitled

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D263238A-G 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.4 November 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238A-G 128Mbit 32Bit 144-Ball K4D26323RA-GC36 K4D263238A-GC2A K4D26323RA-GC2A K4D26323AA-GL*

    K4D263238

    Abstract: K4D263238M-QC40
    Text: 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 1.0 December 2000 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D263238M 128Mbit 32Bit K4D263238M-QC60 2Mx32 4Mx32 K4D263238 K4D263238M-QC40

    K4D623238B-QC50

    Abstract: K4D623238B-QC55
    Text: 64M DDR SDRAM K4D623238B-QC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100-Pin TQFP Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D623238B-QC 64Mbit 32Bit 100-Pin K4D623238B-QL* 100MHz K4D623238B-QC60 K4D623238B-QC50 K4D623238B-QC55

    HY5DV641622AT

    Abstract: No abstract text available
    Text: HY5DV641622AT 64M 4Mx16 DDR SDRAM HY5DV641622AT Revision 0.3 April 2001 Rev. 0.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 64Mb (4Mx16) Double Data Rate SDRAM HY5DV641622AT CONTENTS 1. 4Mx16 DDR SDRAM Brief Information - 3


    Original     		PDF HY5DV641622AT 4Mx16) 4Mx16 HY5DV641622AT

    K4C560838C-TCD3

    Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.4 - 1 - REV. 0.4 May. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) K4C560838C-TCD3 K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA

    K4D623238B-GC45

    Abstract: K4D623238B-GC K4D623238B-GC33 K4D623238B-GC40 K4D623238B-GC50 K4D623238B-GC55 K4D623238B-GC60
    Text: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.4 September 2002 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D623238B-GC 64Mbit 32Bit 144-Ball K4D623238B-GC40 K4D623238B-GL* 100MHz K4D623238B-GC45 K4D623238B-GC K4D623238B-GC33 K4D623238B-GC50 K4D623238B-GC55 K4D623238B-GC60

    HY5DU283222Q

    Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
    Text: HY5DU283222Q 128M 4Mx32 DDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.9/ Nov. 01


    Original     		PDF HY5DU283222Q 4Mx32) 200MHz 370mA 300mA 183/200MHz 200/183Mhz HY5DU283222Q HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55

    Untitled

    Abstract: No abstract text available
    Text: 64M 4Mx16 DDR SDRAM H Y 5 D V 6 4 1 6 2 2 A T Revision 0.3 April 2001 T his docum ent is a general product description and is subject to change w ithout notice. 85 HY5DV641622AT 64Mb(4Mx16) Double Data Rate SDRAM PRELIMINARY D ESC R IPTIO N The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the


    OCR Scan     		PDF 4Mx16) HY5DV641622AT HY5DV641622 864-bit 4Mx16