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    362-6 TRANSISTOR Search Results

    362-6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    362-6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PZ Microcontroller identical to LM4F132H5QC D ATA SHE E T D S -T M 4C 1237 H6 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 362 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright


    Original     		PDF TM4C1237H6PZ LM4F132H5QC)

    RAYTHEON

    Abstract: Raytheon Company RMPA61810 2 watt rf transistor
    Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize


    Original     		PDF RMPA61810 RMPA61810 RAYTHEON Raytheon Company 2 watt rf transistor

    25 uF capacitor

    Abstract: RAYTHEON RMPA61800
    Text: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT


    Original     		PDF RMPA61800 RMPA61800 25 uF capacitor RAYTHEON

    RAYTHEON

    Abstract: RMPA1955-99 GPRS Diagram
    Text: RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Tri-band GSM/GPRS Power Amplifier PA Module which uses Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip


    Original     		PDF RMPA1955-99 RMPA1955-99 RAYTHEON GPRS Diagram

    GSM9004

    Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99
    Text: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module


    Original     		PDF RMPA1955-99 RMPA1955-99 GSM9004 gsm module micro DCS1800 GSM900

    gsm signal amplifier circuit diagram

    Abstract: GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 RMPA1955-99 BW-100
    Text:  Raytheon Commercial Electronics RMPA1955-99 3V Dual-Band GSM Power Amplifier Module Description The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module


    Original     		PDF RMPA1955-99 RMPA1955-99 gsm signal amplifier circuit diagram GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 BW-100

    RF TRANSISTOR 1.5 GHZ dual gate

    Abstract: RMPA61800 CuMoCu
    Text: RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT


    Original     		PDF RMPA61800 RMPA61800 RF TRANSISTOR 1.5 GHZ dual gate CuMoCu

    RAYTHEON

    Abstract: RMPA61810 25 uF capacitor
    Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize


    Original     		PDF RMPA61810 RMPA61810 600mA RAYTHEON 25 uF capacitor

    9452

    Abstract: RAYTHEON RMPA61800 amplifier TRANSISTOR 12 GHZ
    Text: RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier The Raytheon RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to


    Original     		PDF RMPA61800 RMPA61800 600mA 9452 RAYTHEON amplifier TRANSISTOR 12 GHZ

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE ZTX790A PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT790A ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX.


    Original     		PDF ZTX790A FXT790A -50mA, 50MHz -500mA, -50mA -10mA*

    FXT790A

    Abstract: TO-1 amps pnp transistor
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT790A ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V


    Original     		PDF FXT790A -50mA, 50MHz -500mA, -50mA -10mA* -50mA* FXT790A TO-1 amps pnp transistor

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZTX790A PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT790A ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance Switching Times


    Original     		PDF ZTX790A FXT790A

    Q62702-F395

    Abstract: bf363 Q62702-F396 BF 362 BF362
    Text: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 for UHF TV tuners BF 362 and BF 363 are NPN silicon planar RF transistors in a plastic package similarto T 0 119 (50 B3 DIN 41867 . BF 362 is particularly suitable for gain-controlled input stages, and


    OCR Scan     		PDF Q0QHM77 T0119 Q62702-F395 Q62702-F396 fl23SbQS -BF363 bf363 Q62702-F396 BF 362 BF362

    2n6080

    Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF
    Text: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily


    OCR Scan     		PDF 2N6080 2N6081 N6082 2N6083 N6084 250mA 100mA 200mHz 175mHz, 2N6084 2N6082 Thomson-CSF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:EN 572D SA\YO No.572D 2SA1016,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t


    OCR Scan     		PDF 2SA1016 1016K/2SC2362 2362K

    118-136 mhz

    Abstract: sd1222-6 transistor rf vhf
    Text: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor


    OCR Scan     		PDF SD1222-6 aaGG173 10/if 118-136 mhz transistor rf vhf

    transistor j304

    Abstract: thomson microwave transistor
    Text: S G S— THOMSON OSC D | 7 = ^ 2 3 ? OüGQlt.0 7 | ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION


    OCR Scan     		PDF SD1012-3 SD1012-3 18awg. /07-3B transistor j304 thomson microwave transistor

    THOMSON-CSF, RF TRANSISTOR

    Abstract: Thomson-CSF SD1479 Thomson-CSF amplifier Solid State Microwave thomson-csf vhf
    Text: S G S—THOMSON Q4C D " | _ 7 T a T a 3 7 GGaOGfll Q SOLID STATE MICROWAVE 7 7 -// C e SD1479 THOMSON-CSF COMPONENTS CORPORATION Montgomery vil le, PA 18936 • 215 362-8500 ■ TWX 510-6 61-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1479 is a 12.5 volt epitaxial silicon NPN planar


    OCR Scan     		PDF 71-/J SD1479 Hz/12 THOMSON-CSF, RF TRANSISTOR Thomson-CSF Thomson-CSF amplifier Solid State Microwave thomson-csf vhf

    transistor a102

    Abstract: A102 TRANSISTOR a102 npn A102 SD1418 Solid State Microwave Thomson-CSF 001MF60MILSQ
    Text: S-T H O M SO N ~DMC D t 7=12=123 7 OOaOOt.3 T J ~ D 6 3 SOLID STATE MICROWAVE WM - 7^ D ?.?-/ / -^ ' SD 1418 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryville, PA 18936 • {215} 362-8500 * TWX 510-661-7299 800 MHz C O M M U N IC A T IO N S T RA N SIST O R


    OCR Scan     		PDF iacig37^ 0000fc SD1418 SD1418 E5851 001MF60MILSQ transistor a102 A102 TRANSISTOR a102 npn A102 Solid State Microwave Thomson-CSF

    ferroxcube ferrite beads

    Abstract: N15W N25W thomson microwave transistor 2N5946 N5946 TWX510 THOMSON-CSF electrolytic vk 200 N30W
    Text: □4C D I 7 ^ 5 3 7 ' S G S-THOMSON T- ss - t t 00000^5 0 l > SSM S O L ID ST A T E M IC R O W A V E 2 N 5 9 4 6 ; !r THQMSON-CSF COMPONENTS CORPORATION I;Montgomeryvilie, PA 18936• 215 362-8500■ TWX510-661-7299 UHF C O M M U N IC A T IO N S T RA N SISTO R


    OCR Scan     		PDF N5946 TWX510 2N5946 56-590-65/3B 200/19-4B ferroxcube ferrite beads N15W N25W thomson microwave transistor THOMSON-CSF electrolytic vk 200 N30W

    SD1080-2

    Abstract: No abstract text available
    Text: s G S-THOMSON S O L I D QMC D | ?^2ci23? OQaDDlfl 4 I ” ' T ~ ? 3 ~ 6 i i r~ S T A T E M I C R O W A V E ^ 7 " ^ SD 1080-2 ! THOMSON-CSF COMPONENTS CORPORATION ; MontgomeryviHe, PA.18936» {215 362-8500" TWX 510-661-7299 : \ , '• v- 7.5 VOLT VHF C O M M U N IC A T IO N S T RA N SIST O R


    OCR Scan     		PDF SD1080-2 33-G5- 10/iF VK200

    SOT 363 marking code 62 low noise

    Abstract: bf362 bc238c
    Text: ,TELEFUNKEN ELECTRONIC file D fiRBOO^b Q00S201 2 • ALÛÛ ■ r - s t - z . } BF 362 • BF 363 TTEHLtHFODKlGStiMelectronic Creative Technologies Silicon NPN RF Planar Transistors Applications: BF 362: Gain controlled UHF/VHF Input stages 8F 363: Self oscillating mixer stages


    OCR Scan     		PDF Q00S201 569-GS SOT 363 marking code 62 low noise bf362 bc238c

    smd transistor 2f

    Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
    Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.


    OCR Scan     		PDF Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z

    NEC D 553 C

    Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.


    OCR Scan     		PDF 2SC4957 2SC4957-T1 2SC4957-T2 Ple-107 NEC D 553 C TRANSISTOR MAC 223 NEC IC D 553 C