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Catalog Datasheet	MFG & Type	PDF	Document Tags
GSM9004 Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99 Text: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module	Original	PDF	RMPA1955-99 RMPA1955-99 GSM9004 gsm module micro DCS1800 GSM900

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GSM9004

Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99
Text: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

Original

PDF

RMPA1955-99 RMPA1955-99 GSM9004 gsm module micro DCS1800 GSM900