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    362-0 TRANSISTOR Search Results

    362-0 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    362-0 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PZ Microcontroller identical to LM4F132H5QC D ATA SHE E T D S -T M 4C 1237 H6 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 362 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright


    Original     		PDF TM4C1237H6PZ LM4F132H5QC)

    RAYTHEON

    Abstract: Raytheon Company RMPA61810 2 watt rf transistor
    Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize


    Original     		PDF RMPA61810 RMPA61810 RAYTHEON Raytheon Company 2 watt rf transistor

    Q62702-F395

    Abstract: bf363 Q62702-F396 BF 362 BF362
    Text: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 for UHF TV tuners BF 362 and BF 363 are NPN silicon planar RF transistors in a plastic package similarto T 0 119 (50 B3 DIN 41867 . BF 362 is particularly suitable for gain-controlled input stages, and


    OCR Scan     		PDF Q0QHM77 T0119 Q62702-F395 Q62702-F396 fl23SbQS -BF363 bf363 Q62702-F396 BF 362 BF362

    SD1229-1

    Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2 watt carbon resistor THOMSON-CSF, RF TRANSISTOR
    Text: S G S-THOMSON G4C 0 I 7=12=1237 0 0 0 0 0 4 1 T 1~ ' D T ^S3 - / / SOLID STATE MICRUWAVE SD1229-1 THOMSON-CSF COMPONENTS CORPORATION î Montgorrieryville, P A 18936 * Ï215 362-8500 • TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR .230 .320 DESCRIPTION


    OCR Scan     		PDF SD1229-1 SD1229-1 D0D0Q42 electrolytic35 J25/16" VK2K/07-3B RF NPN POWER TRANSISTOR 1000 WATT 2 watt carbon resistor THOMSON-CSF, RF TRANSISTOR

    SD1303

    Abstract: thomson microwave transistor THOMSON-CSF MICROWAVE TRANSISTORS SD-1303
    Text: S G S —THOMSON _ _ _ Q l,C _ D • 0 0 0 0 3 .3 0 ^ J P T '" 5 t '" / S ' SOLID STATE MICROWAVE ^ SD1303 THOMSON-CSF COMPONENTS CORPORATION ^^ontgomwyvUle, PAJ8936 » 2 Î5 362-8500 ■ TWX 510-661-7299 , ' , - /, f .; 'j VHF/UHF COMMUNICATIONS TRANSISTOR


    OCR Scan     		PDF PAJ8936 SD1303 SD1303 thomson microwave transistor THOMSON-CSF MICROWAVE TRANSISTORS SD-1303

    2N5591

    Abstract: 2N5590 2N5589 transistor 2N5589 2n5591_
    Text: S G S-"THOMSON Q5C Q | ?cia clS 3 7 T-JS'-u 0 0 0 0 jb fl2 SOLID STATE MICROWAVE 2N 5589 2N 5590 2N5591 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, PA 18936 • 215 362-8500 ■ T W X 510-661-7299 3 W /1 0 W /2 4 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION:


    OCR Scan     		PDF PA18936 2N5589 2N5590 2N5591 MT-71 N5590 transistor 2N5589 2n5591_

    Untitled

    Abstract: No abstract text available
    Text: 2SA1362 T O SH IB A 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • + 0 .5 2 . 5 - 0 .3 High DC Current Gain : hpE —120~400 Low Saturation Voltage


    OCR Scan     		PDF 2SA1362 400mA,

    SD1451

    Abstract: transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave
    Text: S G S— THOMSON ' ” 0 MC~D ?*=1ETE37 aoaaQ7fl 0 SOLID STATE MICROWAVE SD1451 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvifle, PA 18936• (215? 362-8500« TWX 510-661-7299 2-30 MHz, 12.5 V SSB POWER TRANSISTOR DESCRIPTION The SD1451 is a 12.5 volt epitaxial silicon NPN planar transistor


    OCR Scan     		PDF TWX510-661-7299 SD1451 SD1451 transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave

    transistor j304

    Abstract: thomson microwave transistor
    Text: S G S— THOMSON OSC D | 7 = ^ 2 3 ? OüGQlt.0 7 | ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION


    OCR Scan     		PDF SD1012-3 SD1012-3 18awg. /07-3B transistor j304 thomson microwave transistor

    TACAN transistor

    Abstract: transistor Common Base amplifier
    Text: S G S-THOMSON _ T 'Ji d 04C D | T'ìETEB? 0 0 0 0 1 3 3 M -o r SOLID STATE MICROWAVE SD1524 . THOMSON-CSF COMPONENTS CORPORATION | Montgomeryville, PA 18936 • 215 362-8500 » TWX 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1524 is a gold metalized, silicon NPN power transistor. The


    OCR Scan     		PDF SD1524 SD1524 IFF/28 DME/28 TACAN/28 TACAN transistor transistor Common Base amplifier

    SD1408

    Abstract: Arco 403 vk 200 Solid State Microwave 71-SE THOMSON-CSF, RF TRANSISTOR 50 50 mfd CAPACITOR
    Text: S G S-TH O M S O N Q5C D | 7 1 S e1 2 3 7 0 a Q 0 3 .?M 7 | D T - i ^ - / J _ SOLID STATE MICROWAVE SD1408 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville", PA 18936 • 215 362-8500 ■ TWX 510-661-7299 45 W, 1 2 . 5 V UHF POWER TRANSISTOR DESCRIPTION


    OCR Scan     		PDF SD1408 00QQ175 Arco 403 vk 200 Solid State Microwave 71-SE THOMSON-CSF, RF TRANSISTOR 50 50 mfd CAPACITOR

    sd1272

    Abstract: No abstract text available
    Text: 04C 0 | _ 7 * ^ 2 3 7 ^ GOQOOMB 3 | S G S-THOMSON SOLID STATE MICRUWAVE SD1272 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936» 215 362-8500 • TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1272 is a 12.5 volt epitaxial silicon NPN planar


    OCR Scan     		PDF SD1272 SD1272 Hz/12

    2N6080

    Abstract: 2N6081 2N6084 2N6083
    Text: S G S-THOM SON _ _ DMC I 7 ^ 5 3 ? Q 0 Q D DT 7 SOLID STATE MICROWAVE 4 | _ D _7% ’ ?5l7 2N6080 2N6081 2N6082 2N6083 2N6084 : THOMSON-CSF COMPONENTS CORPORATION : MontgomeryviUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR


    OCR Scan     		PDF 2N6080 2N6081 2N6082 2N6083 2N6084 2N6084

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber:EN 572D SA\YO No.572D 2SA1016,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t


    OCR Scan     		PDF 2SA1016 1016K/2SC2362 2362K

    transistor 2N5

    Abstract: 2N5641 2000C 2N5642 2N5643 MT-72 2n56
    Text: s G S-THOMSQN ~ OSC D | 7151537 □□□Ol'lfl T J ~ 0 ^ SOLID STATE MICROWAVE 2N5641 2N 5642 THOMSON-CSF COMPONENTS CORPORATION « N5643 Montgomeryville, RA 18936 • 215 362-8500 ■ TW X 510-661-7299 ° 7 W /20 W /40 W, 28 V, VHF POWER TRANSISTOR DESCRIPTION:


    OCR Scan     		PDF 2N5641 2N5642 2N5643 transistor 2N5 2000C 2N5642 2N5643 MT-72 2n56

    VK200 inductance

    Abstract: vk200 vk200 rfc with 6 turns SD1136 inductor vk200 VK200 4B inductor Voltronics Corp. ATC100B uhf transistor amplifier MATERIAL-3M-K-6098
    Text: S G □ 5C d | S —THOMSON 7^237 0GQD17Q T .0 T~ 1? -// SOLID STATE MICROWAVE SD1136 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvilie; PA 18936 * (215 362-8500 • TW X 510-661-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1136 is a 12.5 volt epitaxial silicon NPN planar


    OCR Scan     		PDF SD1136 ATC100B, VK200/19-4B 3M-K-6098 CC-12 VK200 inductance vk200 vk200 rfc with 6 turns inductor vk200 VK200 4B inductor Voltronics Corp. ATC100B uhf transistor amplifier MATERIAL-3M-K-6098

    BF363

    Abstract: No abstract text available
    Text: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 fo r U H F T V tuners BF 3 6 2 and BF 3 6 3 are NPN silicon planar RF transistors in a plastic package similarto T 0 119


    OCR Scan     		PDF BF363 BF363

    2N3553

    Abstract: 2N3375 2N3733 2N 3375
    Text: s 'G S-THOMSON ÜSC D | 7T2TE37 GOQanQ 5 Ì o T ~ ? $ r ? SOLID STATE MICROWAVE 2N 3375 2N 3632 THOMSON-CSF COMPONENTS CORPORATION 2N3553 2N 3733 ‘Montgomeryville, PA 1893Ç • 215 362-8500 ■ TWX 510-661-7299 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V, DESCRIPTIO N:


    OCR Scan     		PDF 7T2TE37 2N3553 2N3733 2N3375 2N3733 2N 3375

    thomson rf transistor

    Abstract: thomson microwave transistor sd1013
    Text: 1 S G S-¡-THOMSON DSC D | TTETEB? Q O D Q ltiE r T- 5 ? ' 0 . 7 SOLID STATE MICROWAVE SD1013 THOMSON-CSF COMPONENTS CORPORATION Montgomery ville, PA 18936 • 215 362-8500 ■ TW X 510-661-7299 10 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD1013 is an epitaxial silicon NPN-planar transistor


    OCR Scan     		PDF SD1013 SD1013 thomson rf transistor thomson microwave transistor

    SD1438

    Abstract: thomson microwave transistor
    Text: S G S -TH O M SO N □ SC 0 I 7T5TE37 G O O Q lâM T | ° SOLID STATE MICROWAVE SD1438-2 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, P A 18936 • 215 362-8500 ■ TWX 510-661-7299 100 W, 28 V VHF POWER TRANSISTOR DESCRIPTION ■230 SSM device type SD1438-2 is a 28 volt epitaxial silicon NPN planar


    OCR Scan     		PDF 7T5TE37 SD1438-2 SD1438-2 SD1438 thomson microwave transistor

    ferroxcube ferrite beads

    Abstract: N15W N25W thomson microwave transistor 2N5946 N5946 TWX510 THOMSON-CSF electrolytic vk 200 N30W
    Text: □4C D I 7 ^ 5 3 7 ' S G S-THOMSON T- ss - t t 00000^5 0 l > SSM S O L ID ST A T E M IC R O W A V E 2 N 5 9 4 6 ; !r THQMSON-CSF COMPONENTS CORPORATION I;Montgomeryvilie, PA 18936• 215 362-8500■ TWX510-661-7299 UHF C O M M U N IC A T IO N S T RA N SISTO R


    OCR Scan     		PDF N5946 TWX510 2N5946 56-590-65/3B 200/19-4B ferroxcube ferrite beads N15W N25W thomson microwave transistor THOMSON-CSF electrolytic vk 200 N30W

    Untitled

    Abstract: No abstract text available
    Text: S G S— THOMSON OMC 0 | 715^237 aGGGÜS3 b j S O L ID ST A T E M IC R O W A V E S D 1 410 :THOMSON-CSF COMPONENTS CORPORATION L Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 800 M H z C O M M U N IC A T IO N S T R A N S IS T O R DESCRIPTION


    OCR Scan     		PDF SD1410 -K-6098 K-6098

    BF362

    Abstract: TFK S 741 gain bandwidth product TFK 03 BF363
    Text: BF 362 * BF 363 Silízium-NPN-HF-Planar-Transistoren Silicon NPN RF Planar Transistors Anwendungen: BF 362: Regelbare UHF/VHF-Eingangsstufen BF 363: Selbstschw ingende M ischerstufen Applications: BF 362: Gain co ntrolled UHF/VHF input stages BF 363: S elf oscillating m ixer stages


    OCR Scan     		PDF

    smd transistor 2f

    Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
    Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.


    OCR Scan     		PDF Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z