BYT30-400
Abstract: BYX65-400 BYT30PI200 sfc3303 UFR3004 BYT30PI400 S03502DF NSR8141 do-11 PF340R
Text: HIGH-SPEED DIODES Item Number Part Number Manufacturer •F IR Test 25 °C A (A) >o Max VRRM Vr Max (A) 00 (8) (A) (A) (V) 300n 300n 300n 350n 350n 350n 350n 600n 700n 35n 35n 35n 35n 50n 50n 35n 35n 35n 35n 35n 35n 35n 50n 50n 50n 50n 60n 60n 200n 35n 35n
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ERE75-01
ERG24-01
ERG74-01
S03501DF
1N3915
SM01PCN013
SM01PCN026
12R5/3
BYT30-400
BYX65-400
BYT30PI200
sfc3303
UFR3004
BYT30PI400
S03502DF
NSR8141
do-11
PF340R
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band pass filter mcl pbp 30
Abstract: ISO 8734 filter mcl 0 f6 diode PBP-35N MCL 03 mcl pbp 140
Text: Plug-In Band Pass Filter 50Ω, PBP-35N+ PBP-35N 30 to 40 MHz Maximum Ratings Features Operating Temperature Storage Temperature RF Power Input • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.77" X 0.40" X 0.40" -40oC to 85oC -55oC to 100oC
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PBP-35N+
PBP-35N
-40oC
-55oC
100oC
2002/95/EC)
M98898
EDR-7457U
band pass filter mcl pbp 30
ISO 8734
filter mcl 0
f6 diode
PBP-35N
MCL 03
mcl pbp 140
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"Silicon Controlled Rectifier"
Abstract: cs220 CS220-35M CS220-35N
Text: Central CS220-35M CS220-35N TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 35 AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS220-35M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications
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CS220-35M
CS220-35N
O-220
CS220
O-220
"Silicon Controlled Rectifier"
cs220
CS220-35M
CS220-35N
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0485400000
Abstract: bsk 45 BSK 20 030352 42 AP 0380760000 0130120000 bsm5 SAK35N hp 530
Text: SAK 10 SAK 16 SAK 35N SAK 35 SAK 70 SAK 95N Single Level Single Level Single Level Single Level Single Level Single Level 0110060000* 0443760000* 0271060000* 0380660000* 0550660000 0110080000* 0443780000* 0271080000* 0380680000* 0550620000 0110020000 0110070000
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D-32457
Abstract: No abstract text available
Text: Technical Data Metal Switches Series D D-U1 PW Description Article number 6041113006 Operating symbol 23 – 24 11 – 12 Operating diagram 0mm 17N 2 8mm ON 35N OFF Tolerances Operating point: ± 0.25mm; Actuating force: ± 10% Electrical data Rated insulation voltage
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AC-15,
40V/3A
D-32457
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Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Constituent Brazil plug + H03VVH2-F0.75*2C + 2 pole connector Power Cable assembly Brazil plug Series 02 Pin Brazil plug to 2 pole connector Mechanical Mating Force: 35N max. Unmating Force: 10N min. Electrical Withstand Voltage: 2500V AC/1 Sec
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H03VVH2-F0
/500V
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H03VVH2-F
Abstract: No abstract text available
Text: SPECIFICATIONS Constituent Argentina plug + H03VVH2-F 2*0.75 + 2 poles connector Power Cable assembly Argentina plug Series 02 Pin Argentina plug to 2 poles connector Mechanical Mating Force: 35N max. Unmating Force: 10N min. Electrical Withstand Voltage: 2500V AC/1 Sec
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H03VVH2-F
/500V
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Untitled
Abstract: No abstract text available
Text: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Accessories | End and partition plates | WHP 2.5-10 General ordering data Order No. Part designation Version EAN Qty. 1050280000 WHP 2.5-35N/10x3 BL Modular terminal, accessories, End and
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5-35N/10x3
5-35N-10X3
5-35N/10x3
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Untitled
Abstract: No abstract text available
Text: STK14D88 32Kx8 Autostore nvSRAM FEATURES DESCRIPTION • 25, 35n, 45ns Read Access & Write Cycle Time The Simtek STK14D88 is a fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance
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32Kx8
20-Year
STK14D88
STK14D88
300ns
ML0033
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foxconn
Abstract: No abstract text available
Text: SPECIFICATIONS Constituent Australia plug+ H05VV-F 1.0*3C+ 3 pole connector Power Cable assembly Australia plug Series 03 Pin Australia plug to 3 pole connector Mechanical Mating Force: 35N max . Unmating Force: 10N min. Electrical Withstand Voltage: 2500V AC/1 Sec
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H05VV-F
/500V
foxconn
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Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Constituent Brazil Plug + VCTFK 0.75*2C+ 2 Poles connectors Power Cable assembly Brazil plug Series Brazil plug 02 Pos. to 2 poles connector Mechanical Mating Force: 35N max. Unmating Force: 10N min. Electrical Withstand Voltage: 2500V AC/1 Sec
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/500V
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Untitled
Abstract: No abstract text available
Text: STK14CA8 128Kx8 Autostore nvSRAM FEATURES DESCRIPTION • 25, 35n, 45ns Read Access & Write Cycle Time The Simtek STK14CA8 is a fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance
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128Kx8
20-Year
STK14CA8
STK14CA8
ML0022
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PBP-35N
Abstract: No abstract text available
Text: Plug-In Band Pass Filter Elliptic Response PBP-35N+ Typical Performance Curves Insertion Loss 10 Insertion Loss (dB) 20 30 40 50 60 70 80 90 100 100 200 300 400 500 600 700 800 900 1000 700 800 900 1000 Frequency (MHz) Return Loss 3 Return Loss (dB) 6 9 12
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PBP-35N+
PBP-35N
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SXBP-35N
Abstract: SXBP SXBP-35N sxbp-35n
Text: Surface Mount Band Pass Filter SXBP-35N+ Typical Performance Curves INSERTION LOSS vs. TEMPERATURE 10 -40°C @ Input Power = 0 dBm 20 +25°C @ Input Power = 0 dBm 30 +85°C @ Input Power = 0 dBm dB 40 50 60 70 80 90 100 100 200 300 400 500 600 700 800 Frequency (MHz)
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SXBP-35N+
SXBP-35N
SXBP
SXBP-35N sxbp-35n
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SXBP-35N
Abstract: HF1139 MCL 749
Text: Surface Mount Bandpass Filter 50Ω SXBP-35N+ 30 to 40 MHz Maximum Ratings Features -40oC to 85oC Operating Temperature -55oC to 100oC Storage Temperature RF Power Input • Excellent rejection • Good VSWR, 1.1:1 Typ @ Passband CASE STYLE: HF1139 PRICE: $15.95 ea. QTY 1-9
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SXBP-35N+
-40oC
-55oC
100oC
HF1139
M112217
EDR-7458U
SXBP-35N
HF1139
MCL 749
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Untitled
Abstract: No abstract text available
Text: PN3644 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)35nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.
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PN3644
Freq200M
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Untitled
Abstract: No abstract text available
Text: PN3645 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)35nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.
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PN3645
Freq200M
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SXBP-35N
Abstract: No abstract text available
Text: Surface Mount Band Pass Filter 50Ω SXBP-35N+ 30 to 40 MHz Maximum Ratings Features -40oC to 85oC Operating Temperature -55oC to 100oC Storage Temperature RF Power Input • Excellent rejection • Good VSWR, 1.1:1 Typ @ Passband CASE STYLE: HF1139 PRICE: $15.95 ea. QTY 1-9
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-40oC
-55oC
100oC
SXBP-35N+
HF1139
2002/95/EC)
M112217
EDR-7458U
SXBP-35N
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Untitled
Abstract: No abstract text available
Text: TP3645 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)35nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.
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TP3645
Freq200M
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Untitled
Abstract: No abstract text available
Text: Surface Mount Bandpass Filter 50Ω SXBP-35N+ 30 to 40 MHz Maximum Ratings Features -40oC to 85oC Operating Temperature -55oC to 100oC Storage Temperature RF Power Input • Excellent rejection • Good VSWR, 1.1:1 Typ @ Passband CASE STYLE: HF1139 PRICE: $15.95 ea. QTY 1-9
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SXBP-35N+
-40oC
-55oC
100oC
HF1139
M112217
EDR-7458U
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35n05
Abstract: 35N06 MTM35N05 MTM35N06 MTH35N05 TH35N TH35N05
Text: MOTOROLA SC XSTRS/R IME D § F fc.3i.72SM G O û T O l M| MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TH35N 05 M TH35N 06 M TM 35N 05 M TM 35N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed fo r high speed power
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TH35N
a4306SC
35n05
35N06
MTM35N05
MTM35N06
MTH35N05
TH35N05
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Untitled
Abstract: No abstract text available
Text: Central' CS220-35M CS220-35N Semiconductor Corp. SILICON CONTROLLED RECTIFIER 35 AMP, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS220-35M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications
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CS220-35M
CS220-35N
T0-220
O-220
O-220
24-September
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CS218-35B
Abstract: CS218-35D CS218-35M CS218-35N CS218-35P CS218-35PB scr 106 C
Text: CS218-35B Datasheet CS218-35D CS218-35M CS218-35N CS218-35P CS218-35PB F A IIU n f HIII II I16 Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS
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CS218-35B
CS218-35D
CS218-35M
CS218-35N
CS218-35P
CS218-35PB
O-218
CS218-35B
CS218
CS218-35D
CS218-35M
CS218-35N
CS218-35P
CS218-35PB
scr 106 C
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c048
Abstract: CQ48-35B CQ48-35D CQ48-35M CQ48-35N
Text: Datasheet roiiI v m i I IpW CQ48-35B CQ48-35D CQ48-35M CQ48-35N 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 35 AMP TRIAC 200 THRU 800 VOLTS Semiconductor Corp. JEDEC TO-48 CASE Manufacturers of World Class Discrete Semiconductors
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CQ48-35B
CQ48-35D
CQ48-35M
CQ48-35N
c048
CQ48-35N
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