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    35LMB Price and Stock

    Rochester Electronics LLC CY7C245-35LMB

    IC EPROM 16KBIT PARALLEL
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    DigiKey CY7C245-35LMB Bulk 13
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    Rochester Electronics LLC CY7C291-35LMB

    IC EPROM 16KBIT PARALLEL
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    DigiKey CY7C291-35LMB Bulk 8
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    Teledyne e2v PLDC20RA10-35LMB

    PROG. LOGIC DEVICE, ASYNCHRONOUS, 35 NS - Rail/Tube (Alt: PLDC20RA10-35LMB)
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    Avnet Americas PLDC20RA10-35LMB Tube 250
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    Teledyne e2v CY7C261-35LMB

    PROM, 8K X 8, 35 NS ACCESS TIME - Rail/Tube (Alt: CY7C261-35LMB)
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    Teledyne e2v QP7C199L-35LMB

    STATIC RAM, 32K X 8, LOW-POWER, 35 NS AC - Rail/Tube (Alt: QP7C199L-35LMB)
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    Find more 35LMB price and stock on Findchips.com

    35LMB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    35LMB Cypress Semiconductor IC SRAM CHIP ASYNC DUAL 5V 32KBIT 4KX8 Original PDF

    35LMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C187

    Abstract: CY7C187A
    Text: CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down feature, reducing the power consumption by 55% when deselected. • High speed — 20 ns • CMOS for optimum speed/power


    Original     		PDF CY7C187A CY7C187A CY7C187

    CY7C128A

    Abstract: transistor C128 C128A 7C128A-45 7C128A-25
    Text: 1CY 7C12 8A CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 440 mW commercial — 550 mW (military) • Low standby power


    Original     		PDF CY7C128A CY7C128A transistor C128 C128A 7C128A-45 7C128A-25

    CY7C197

    Abstract: No abstract text available
    Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


    Original     		PDF CY7C197 256Kx1 CY7C197

    FT6163

    Abstract: No abstract text available
    Text: FT6163/FT6163L  Ultra High Speed 8K x 9 Static Cmos Rams FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current 7163L Military) Common I/O Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved)


    Original     		PDF FT6163/FT6163L 28-Pin 25/35ns 25/35/45ns FT6163 FT6163L 728-bit

    P4C148

    Abstract: P4C149
    Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		PDF P4C148, P4C149 P4C148 P4C149 096-bit

    P4C150

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


    Original     		PDF P4C150 24-Pin 28-Pin P4C150 096-bit requires300 SRAM105

    P4C147

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


    Original     		PDF P4C147 SRAM103 SRAM103 P4C147 Oct-05

    P4C168

    Abstract: P4C169 P4C170
    Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options


    Original     		PDF P4C168, P4C169, P4C170 12/15/20/25/35ns 20/25/35/45/55/70ns P4C168 P4C169 P4C170 P4C168

    CY7C185A-20LMB

    Abstract: C185A CY7C185 CY7C185A 624a2
    Text: 1CY 7C18 5A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features


    Original     		PDF CY7C185A CY7C185A 300-mil-wide CY7C185A-20LMB C185A CY7C185 624a2

    Untitled

    Abstract: No abstract text available
    Text: P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell Single 5V ± 10% Power Supply High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Separate Input and Output Ports Three-State Outputs


    Original     		PDF P4C147 SRAM103 SRAM103 P4C147 Oct-05

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Text: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		PDF CY7C161A CY7C162A 7C161A) CY7C162 au62A-35DMB CY7C162Aâ 35KMB CY7C162A-35LMB CY7C162A-45DMB 7cl6 D-2501 CY7C162A

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


    OCR Scan     		PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word byGY7C264 CY7C263-35PC 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 f1b0

    0148-t

    Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
    Text: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese­ lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)


    OCR Scan     		PDF 7C148) 25-ns 0GQb411 CY7C148 CY7C149 CY7C149-45KMB CY7C149â 45LMB 0148-t CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350

    7C192-12

    Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power


    OCR Scan     		PDF CY7C191 CY7C192 7C19X) TheCY7C191 CY7C192 CY7C192-45VC CY7C192-45DMB CY7C192-45KMB CY7C192â 45LMB 7C192-12 7C192-15 7C192-20 A10C CY7C192-25PC

    7C192-12

    Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
    Text: CY7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C191 and CY7C192 are high­ perform ance CM OS static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­


    OCR Scan     		PDF CY7C191 CY7C192 CY7C191) CY7C192 38-00076-J tAW15! tADvI15! 7C192-12 7C192-15 A10C CY7C192-25PC

    7C168A

    Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
    Text: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)


    OCR Scan     		PDF CY7C168A CY7C169A 7C168A) 7C169A) 7C168) 2001Velectrostatic CY7C168A CY7C169A CY7CI68Ahas CY7C169A-45FMB 7C168A 7C168 CY7C168A-25LMB

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Text: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF CY7C109A 128Kx CY7C109A AB26S 7C109A CY7C109

    cy7c131-55nc

    Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
    Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­


    OCR Scan     		PDF CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; IDT7130 IDT7140 cy7c131-55nc ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7140

    automaticpower change over switch circuit diagram

    Abstract: CY7C185 CY7C185A
    Text: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C185A CY7C185A 300-miMilitary CY7C185Aâ 25LMB 28-Pin 35DMB 28-Lead automaticpower change over switch circuit diagram CY7C185

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY SEMCONDUCTOR CY7B138 CY7B139 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per­ formance • High-speed access — 15 ns com’l — 25 ns (mil) • Automatic power-down • Fully asynchronous operation


    OCR Scan     		PDF CY7B138 CY7B139 68-pin CY7B138 CY7B139

    Untitled

    Abstract: No abstract text available
    Text: CY7B134 CY7B135 CY7B1342 F# CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional D escription • 0.8-micron BiCMOS for high performance T he CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port


    OCR Scan     		PDF CY7B134 CY7B135 CY7B1342 CY7B134, CY7B135, CY7B1342 GD15bDfl

    Untitled

    Abstract: No abstract text available
    Text: CY7C148 CY7C149 CYPRESS IK x 4 Static RAM Features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected 7C148 • CMOS for optimum speed/power • 25-ns access time • Low active power — 440 mW (commercial) — 605 mW (military)


    OCR Scan     		PDF CY7C148 CY7C149 7C148) 25-ns CY7C148 CY7C149 7C148

    Untitled

    Abstract: No abstract text available
    Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)


    OCR Scan     		PDF 300-mil CY7C271A CY7C271A 768-word 7C271A S50Tbb2 GG1530Q

    Untitled

    Abstract: No abstract text available
    Text: CY7B144 CY7B145 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per­ formance • High-speed access — 15 ns commercial — 25 ns (military) The CY7B144 and CY7B145 are high­ speed BiCMOS 8K x 8 and 8K x 9 dual­


    OCR Scan     		PDF CY7B144 CY7B145 CY7B144 CY7B145 CY7B144/5 CY7B144/5 64-Kbit 16/18-bit 38-00163-E