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    34N80 Search Results

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    34N80 Price and Stock

    IXYS Corporation IXFK34N80

    MOSFET N-CH 800V 34A TO-264AA
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    DigiKey IXFK34N80 Tube 300
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    Mouser Electronics IXFK34N80
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    Bristol Electronics IXFK34N80 3
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    TME IXFK34N80 1
    • 1 $31.21
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    • 100 $23.07
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    IXYS Corporation IXFR34N80

    MOSFET N-CH 800V 28A ISOPLUS247
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    IXYS Corporation IXFN34N80

    MOSFET N-CH 800V 34A SOT-227B
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    DigiKey IXFN34N80 Tube 10
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    Mouser Electronics IXFN34N80
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    Microchip Technology Inc APT34N80LC3G

    MOSFET N-CH 800V 34A TO264
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    DigiKey APT34N80LC3G Tube 50
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    Newark APT34N80LC3G Bulk 50
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    NAC APT34N80LC3G Tube 35
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    Richardson RFPD APT34N80LC3G 1
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    Microchip Technology Inc APT34N80B2C3G

    MOSFET N-CH 800V 34A T-MAX
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    DigiKey APT34N80B2C3G Tube 50
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    Newark APT34N80B2C3G Bulk 50
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    NAC APT34N80B2C3G Tube 35
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    Richardson RFPD APT34N80B2C3G 1
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    EBV Elektronik APT34N80B2C3G 143 Weeks 50
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    Find more 34N80 price and stock on Findchips.com

    34N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    34N80

    Abstract: IXFN34N80 ixfx34n80
    Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 34N80 247TM 34N80 IXFN34N80 ixfx34n80

    34N80

    Abstract: 34N8
    Text: IXFR 34N80 VDSS = 800 HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 RDS on = 0.24 (Electrically Isolated Backside) V A Ω trr ≤ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; R GS = 1 MΩ


    Original     		PDF ISOPLUS247TM 34N80 247TM E153432 34N8

    BT 1496

    Abstract: 34N80 diode 931 p 7
    Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr RDS on D S Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS VGSM Continuous Transient


    Original     		PDF 34N80 BT 1496 34N80 diode 931 p 7

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 34N80 OT-227 E153432 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 Ω trr ≤ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 34N80 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF O-264 34N80 34N80 247TM

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C


    Original     		PDF 34N80 OT-227 E153432

    34N80

    Abstract: No abstract text available
    Text: IXFR 34N80 VDSS = 800 HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 RDS on = 0.24 (Electrically Isolated Backside) V A Ω trr ≤ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 34N80 ISOPLUS247TM 247TM E153432

    34N80

    Abstract: 125OC 34N8
    Text: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS on = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C


    Original     		PDF 34N80 34N80 125OC 34N8

    34N80

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 34N80 VDSS = 800 ID25 = 28 RDS on = 0.24 (Electrically Isolated Backside) V A W trr £ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 34N80 247TM

    IXFN34N80

    Abstract: No abstract text available
    Text: IXFK 34N80 IXFX 34N80 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF O-264 34N80 34N80 247TM IXFN34N80

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    A76 battery

    Abstract: 0B4 DC-DC
    Text: in ix Y s HiPerFET Power MOSFETs Single DieMOSFET ix f n 34N80 V.DSS I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr = 800 V = 34 A = 0.24 f t trr <250 ns Preliminary data sheet Symbol Test Conditions V„ss Vocn Tj =25°C to 150°C


    OCR Scan     		PDF 34N80 A76 battery 0B4 DC-DC

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS H H ifl JL æ* X HiPerFET Power MOSFETs Single DieMOSFET ix f n 34N80 v , DSS ^D25 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr R DS on = 800 V = 34 A = 0.24 Q trr < 250 ns Preliminary data sheet Maximum Ratings Symbol Test C onditions


    OCR Scan     		PDF 34N80 OT-227 E153432

    IXFK34N80

    Abstract: No abstract text available
    Text: nixYS Advanced Technical Information HiPerFET Power MOSFETs IXFK 34N80 IXFX 34N80 Test Conditions V DSS VDon Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 Mi2 800 800 V V Vas v GSM Continuous Transient ±20 ±30 V V Tc = 25° C MOSFET chip capability


    OCR Scan     		PDF IXFK34N80 IXFX34N80 Cto150

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50