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    3386 TRANSISTOR Search Results

    3386 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3386 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGA-3386

    Abstract: SGA-3386-TR2
    Text: Preliminary Product Description SGA-3386 Stanford Microdevices’ SGA-3386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-3386 SGA-3386 50-ohm DC-3600 EDS-100633 SGA-3386-TR2

    3386 transistor

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-3386 Stanford Microdevices’ SGA-3386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-3386 50-ohm SGA-3386 DC-3600 3386 transistor

    EDS-100

    Abstract: 900 mhz oscillator
    Text: Preliminary Product Description SGA-3386 Stanford Microdevices’ SGA-3386 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-3386 50-ohm SGA-3386 DC-3600 EDS-100633 EDS-100 900 mhz oscillator

    TRANSISTOR MARKING A33

    Abstract: SGA-3386 3386 transistor
    Text: Product Description Stanford Microdevices’ SGA-3386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


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    PDF SGA-3386 DC-5000 SGA-3386 EDS-100633 TRANSISTOR MARKING A33 3386 transistor

    MAX3726

    Abstract: analog PIN Photodiode 3GHz MAX3746HETE MAX3748A MAX3724 MAX3744 MAX3746 MAX3746ETE OC48-FEC
    Text: 19-3386; Rev 2; 6/07 Low-Power, 622Mbps to 3.2Gbps Limiting Amplifier The MAX3746 multirate limiting amplifier functions as a data quantizer for SONET, Fibre-Channel, and Gigabit Ethernet optical receivers. The amplifier accepts a wide range of input voltages and provides selectable-level,


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    PDF 622Mbps MAX3746 MAX3744/MAX3724 MAX3746 MAX3726 analog PIN Photodiode 3GHz MAX3746HETE MAX3748A MAX3724 MAX3744 MAX3746ETE OC48-FEC

    Untitled

    Abstract: No abstract text available
    Text: 19-3386; Rev 2; 6/07 Low-Power, 622Mbps to 3.2Gbps Limiting Amplifier The MAX3746 multirate limiting amplifier functions as a data quantizer for SONET, Fibre-Channel, and Gigabit Ethernet optical receivers. The amplifier accepts a wide range of input voltages and provides selectable-level,


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    PDF 622Mbps MAX3746 MAX3744/MAX3724 MAX3746

    MAX3726

    Abstract: analog PIN Photodiode 3GHz HFAN11
    Text: 19-3386; Rev 2; 6/07 Low-Power, 622Mbps to 3.2Gbps Limiting Amplifier The MAX3746 multirate limiting amplifier functions as a data quantizer for SONET, Fibre-Channel, and Gigabit Ethernet optical receivers. The amplifier accepts a wide range of input voltages and provides selectable-level,


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    PDF 622Mbps MAX3746 MAX3744/MAX3724 21-0136I T1633F-3* MAX3726 analog PIN Photodiode 3GHz HFAN11

    MAX3726

    Abstract: analog PIN Photodiode 3GHz
    Text: 19-3386; Rev 0; 8/04 Low-Power, 622Mbps to 3.2Gbps Limiting Amplifier Features ♦ SFP Reference Design Available ♦ Low 115mW Power Consumption ♦ 16-Pin QFN Package with 3mm x 3mm Footprint ♦ 70ps Rise and Fall Time ♦ Loss-of-Signal with Programmable Threshold


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    PDF 622Mbps 115mW 16-Pin MAX3744/MAX3724 MAX3746 MAX3744/ MAX3724 SFF-8472 MAX3748A MAX3726 analog PIN Photodiode 3GHz

    MAX3726

    Abstract: 10G APD chip MAX3724 MAX3744 MAX3746 MAX3746ETE MAX3746HETE MAX3748A analog PIN Photodiode 3GHz
    Text: 19-3386; Rev 1; 2/06 Low-Power, 622Mbps to 3.2Gbps Limiting Amplifier Features The MAX3746 multirate limiting amplifier functions as a data quantizer for SONET, Fibre-Channel, and Gigabit Ethernet optical receivers. The amplifier accepts a wide range of input voltages and provides selectable-level,


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    PDF 622Mbps MAX3746 MAX3744/MAX3724 MO220 MAX3726 10G APD chip MAX3724 MAX3744 MAX3746ETE MAX3746HETE MAX3748A analog PIN Photodiode 3GHz

    JESD22-B102-C

    Abstract: SOT-86 sot86 transistor c 5586 q404 transistor SGA-6486Z SGA-6286 JESD22-B102C q402 transistor transistor 5586
    Text: Reliability Report SGA/SGC Series in SOT-86 Package SnPb Plated SGA-2186 SGA-2286 SGA-2386 SGA-2486 SGA-3286 SGA-3386 SGA-3486 SGA-3586 SGA-4186 SGA-4286 SGA-4386 SGA-4486 SGA-4586 SGA-5286 SGA-5386 SGA-5486 SGA-5586 SGA-6286 SGA-6386 SGA-6486 Matte Sn, RoHS Compliant


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    PDF OT-86 SGA-2186 SGA-2286 SGA-2386 SGA-2486 SGA-3286 SGA-3386 SGA-3486 SGA-3586 SGA-4186 JESD22-B102-C SOT-86 sot86 transistor c 5586 q404 transistor SGA-6486Z SGA-6286 JESD22-B102C q402 transistor transistor 5586

    A1W diode

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, January 14 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format


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    PDF FTF5033C FTF5033C 4992H A1W diode

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5033M 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, January 14 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033M 35mm film compatible image format


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    PDF FTF5033M FTF5033M 4992H

    diode a4W

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2007, August 21 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format


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    PDF FTF5033C FTF5033C 4992H diode a4W

    transistor a4y

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5033M 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2007, August 21 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033M 35mm film compatible image format


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    PDF FTF5033M FTF5033M 4992H transistor a4y

    FTF5033M

    Abstract: asp 962 image sensor CCD IMAGE ccd image sensor diode a4W BAS28 BAT74 BC860C BFR92
    Text: IMAGE SENSORS DATA SHEET FTF5033M 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033M 35mm film compatible image format


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    PDF FTF5033M 4992H FTF5033M asp 962 image sensor CCD IMAGE ccd image sensor diode a4W BAS28 BAT74 BC860C BFR92

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5033M 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033M 35mm film compatible image format


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    PDF FTF5033M FTF5033M 4992H

    a4w transistor

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2007, March 01 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format


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    PDF FTF5033C FTF5033C 4992H a4w transistor

    mxt 2410 sx

    Abstract: PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751
    Text: RoHS-COMPLIANT INFORMATION CHART RoHS-compliant refers to no Pb, Cd, Cr+6, Hg, PBB or PBDE unless use exempted or within allowable limits. RoHS 5/6 refers to no Cd, Cr+6, Hg, PBB or PBDE – Pb solder or Pb plating present Telecom exemption . Bourns Product Line


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    PDF CD0402, OD323, CD214A-F, 14A-R, 214B-F, CD214B-R, 214C-F, 214C-R, CD214L-TxxA/CA CD214A-B, mxt 2410 sx PTC MZ 5 pot 3296 BDXXX lm 7914 pot 3296 small thermo-disc 4011 5106a therm-o-disc lm 3751

    IXAN0022

    Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
    Text: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS


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    PDF IXAN0022 ISOPLUS220TM, ISOPLUS247TM, ISOPLUS264 ISOPLUS220, ISOLPUS247 advantKU4-498/X ISOPLUS220 KU4-498/X O-247 IXAN0022 KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-3386 Stanford M icrodevices’ SG A-3386 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-3386 50-ohm DC-3600

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU V22 SW IT C H M O D E Series N PN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed or high current, high speed, high power applications. • • • High DC current gain: HFE min. = 20 at lc = 10 A


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    PDF

    mm5007

    Abstract: No abstract text available
    Text: M O T OR OLA SC XSTRS/R F 12E D J b3b?aS4 QOflbSi? 3 | MM5005' thru MM5007 CASE 79-04, STYLE 1 TO-39 TO-205AD M AXIM UM RATINGS Rating Symbol MMS005 MM5006 MM5007 Unit Collector-Emitter Voltage VCEO 60 80 100 Vdc Collector-Base Voltage VCBO 80 100 120 Vdc


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    PDF MM5005' MM5007 MMS005 MM5006 MM5007 O-205AD) MM5005

    3N45

    Abstract: 35165 TA9193 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TA9232 rca application notes 35169
    Text: Standard Power M O S F E T s _ File Number 1384 RFM3N45, RFM3N50, RFP3N45, RFP3N50 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors 3 A, 450 and 500 V rDs on : 3 0 Features: • SOA is p o w e r-d is s ip a tio n lim ite d


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    PDF RFM3N45, RFM3N50, RFP3N45, RFP3N50 92CS-3374I RFM3N45 RFM3N50 RFP3N45 RFP3N50 92CS-35I66R1 3N45 35165 TA9193 TA9232 rca application notes 35169

    pnp transistor array uln

    Abstract: uln2046 LM 3018 ic. uln 2003 ULN pnp K1KT011 ULN pnp array lm 2003 ULN 2003 E SG3823
    Text: FUNKAMATEUR - Bauelementeinformation VT T ransistor- Arrays Daten und Vergleichslisten Hinweise Symbole D ie T ypen in der T abelle „Pinkom pa­ tibel“ sind m eist nicht völlig äquiva­ lent. Es m üssen jed och beim A u s­ tausch nur geringe Einschränkungen


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    PDF ULS-2045 SFC2046E TBA331 TCA671 K1KT011E K1KT011 TCA871 K1HT981E K1HT981 LM3145AJ pnp transistor array uln uln2046 LM 3018 ic. uln 2003 ULN pnp ULN pnp array lm 2003 ULN 2003 E SG3823