Untitled
Abstract: No abstract text available
Text: NTMFS4H01N Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance
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NTMFS4H01N
NTMFS4H01N/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4H01N Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance
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NTMFS4H01N
NTMFS4H01N/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance
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NTMFS4H01NF
NTMFS4H01NF/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4H01NF Power MOSFET 25 V, 334 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance
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NTMFS4H01NF
NTMFS4H01NF/D
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Untitled
Abstract: No abstract text available
Text: International ja g Rectifier HEXFET Power MOSFET • • • • • • 4 fl5 5 4 S 2 PD-9.457C INR QD1SS2L 334 IRFP440 INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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IRFP440
O-247
O-220
46554S2
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IRF5804PbF
Abstract: No abstract text available
Text: PD - 95503A IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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5503A
IRF5804PbF
OT-23.
IRF5804PbF
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IRf 334
Abstract: No abstract text available
Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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IRF5804PbF
OT-23.
IRf 334
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4TPE220M
Abstract: 3708 fairchild FDS6982S 2R5TPE220M LTC3708 dn334
Text: advertisement 2-Phase DC/DC Controller Makes Fast, Efficient and Compact Power Supplies – Design Note 334 David Chen High efficiency, fast transient response and small size are often at odds in power supply designs. Fortunately, the 2-phase LTC 3708 PWM controller makes it possible to
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LTC3708
4TPE220M
2R5TPE220M
IHLP-2525
FDS6982S
100pF
dn334f
4TPE220M
3708 fairchild
FDS6982S
2R5TPE220M
dn334
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Untitled
Abstract: No abstract text available
Text: VIV0102THJ US C S C NRTL US VTM Transformer TM FEATURES • 48 Vdc to 1.5 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >90% reduces system power consumption • High density (334 A/in2) • “Half Chip” V• I Chip package enables surface mount,
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VIV0102THJ
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D496
Abstract: D505 VIV0102MHJ VIV0102THJ
Text: VIV0102THJ US C S C NRTL US VTM Transformer TM FEATURES • 48 Vdc to 1.5 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >89% reduces system power consumption • High density (334 A/in3) • “Half Chip” V• I Chip package enables surface mount,
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VIV0102THJ
D496
D505
VIV0102MHJ
VIV0102THJ
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68 UF 450V
Abstract: c 103 mosfet OKAYA 224 Okaya
Text: HCP-S SERIES CAPACiïOR @ OKAYA M Features • Compact size and resin case. • Improved safety and suppressing self-heating. Applications • High frequent circuit, High voltage resonant circuit, snubber circuit and Protection of semiconductors such as IGBT, IPM and MOSFET.
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100Hz)
68 UF 450V
c 103 mosfet
OKAYA 224
Okaya
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PMG4218
Abstract: No abstract text available
Text: E EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION Prepared also subject responsible if other 1/1301 00152-EN/LZT146334 BMR 644Technical 4/M Uen Specification MPM/BY/P Henrik Sundh Approved PMG 4000F series MPM/BY/M [Krister Lundberg]
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00152-EN/LZT146334
644Technical
JESD22-A103-B
JESD22-B105-C
JESD22-A101-B
JESD22-B104-B
JESD22-B103-B
JESD22-B103-B
PMG4218
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VN88AFA
Abstract: VN46AFA VN46AF VN66AF VN66AFA VN88AF VN40AFA
Text: VN46AFA Series 1.2 AMPERES 40-80 VOLTS RPS ON = 3.0, 4.0 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in
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VM46AFA
VN40AFA
VN66AFA
VN88AFA
VN88AFA
VN46AFA
VN46AF
VN66AF
VN66AFA
VN88AF
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f1s4n100
Abstract: No abstract text available
Text: <^£.mi- 2onditctoi LPioducti, Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP4N100, RF1S4N100SM 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel
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RFP4N100,
RF1S4N100SM
RFP4N100
RFP4N100SM
00A/US
f1s4n100
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SMK0260
Abstract: SMK 0260 SMK0260I mosfet 600V 20A
Text: SMK0260I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=3.4pF(Typ.) Low gate charge : Qg=7.0nC(Typ.) Low RDS(on) : RDS(on)=4.7Ω(Max.) D G Ordering Information
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SMK0260I
SMK0260
KSD-T6Q004-001
SMK0260
SMK 0260
SMK0260I
mosfet 600V 20A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET -25A, -100V, 0.150 Ω, P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand
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UTT25P10
-100V,
UTT25P10
-100V
UTT25P10L-TA3-T
UTT25P10G-TA3-T
QW-502-597
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Untitled
Abstract: No abstract text available
Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP8N20L 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A,200V This N-Channel enhancement mode silicon gate power field
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RFP8N20L
00A/HS
300ns
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2n6796
Abstract: MOSFET
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINQRELO, NEW JERSEY 07081 U.SA 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications
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2N6796
2N6796
310mA
00A/HS
MOSFET
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4480DY S e m i c o n d u c t o r s N-Channel 80-V Rated MOSFET Product Summary V d s V I d (A ) I*DS(on) ( ß ) 0.035 @ V qS = 10 V ± 6.0 0.040 @ VGS = 6.0 V ± 5.5 80 ,0 * ' SO -8 It . 0 -'I- Top View N-Channe! M O SFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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4480DY
S-49459--Rev.
J7-Dec-96
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: ^s.mi-dondiicto'i Lpioduati, One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 RFP25N05 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A,50V The RFP25N05 N-channel power MOSFET is manufactured
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RFP25N05
RFP25N05
O-220ABo
00A/HS
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SiR470DP
Abstract: S-82146 S82146
Text: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiR470DP
18-Jul-08
S-82146
S82146
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Untitled
Abstract: No abstract text available
Text: IRLW/IZ34A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 30 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175» »Operating Temperature ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = 60V
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IRLW/IZ34A
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an7254
Abstract: AN7260 RFM3N45 RFM3N50 RFP3N45 RFP3N50 TB334 TA17405
Text: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark RFM3N45, RFM3N50, RFP3N45, RFP3N50 Semiconductor Data Sheet 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate
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RFM3N45,
RFM3N50,
RFP3N45,
RFP3N50
TB334
an7254
AN7260
RFM3N45
RFM3N50
RFP3N45
RFP3N50
TB334
TA17405
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MOSFET
Abstract: 2N6784
Text: ne>. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6784 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.25A, 200V The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for
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2N6784
2N6784
O-205AF
00A/jis
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