32N170H1 Search Results

32N170H1 Price and Stock

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IXYS Corporation IXGR32N170H1 IGBT 1700V 38A 200W ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGR32N170H1	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGR32N170H1		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGX32N170H1 IGBT 1700V 75A 350W PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGX32N170H1	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXGX32N170H1 Disc Igbt Npt-Hi Voltage To-247Ad/Tube \|Littelfuse IXGX32N170H1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGX32N170H1	Bulk			30	1 - 10 - 100 $21.72 1000 $21.72 10000 $21.72	Buy Now
IXYS Integrated Circuits Division IXGR32N170H1 IGBT DIS.DIODE SINGLE 20A 1700V H.VOLT ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGR32N170H1					1 $32.6106 10 $32.6106 100 $30.4772 1000 $30.4772 10000 $30.4772	Get Quote
IXYS Integrated Circuits Division IXGX32N170H1 IGBT DIS.DIODE SINGLE 32A 1700V H.VOLTAGE PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGX32N170H1					1 $35.50356 10 $35.50356 100 $33.1809 1000 $33.1809 10000 $33.1809	Get Quote

32N170H1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DH60-18A Abstract: IXGH32N170A PLUS247 Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	PDF	32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1 PLUS247
IXGX32N170H1 Abstract: No abstract text available Text: IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Preliminary Data Sheet\ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous	Original	PDF	32N170H1 PLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170H1
Untitled Abstract: No abstract text available Text: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	32N170H1 IXGH32N170 405B2
Untitled Abstract: No abstract text available Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	PDF	32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1
IXGR32N170H1 Abstract: 32N170H1 Text: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	32N170H1 ISOPLUS247 E153432 IXGH32N170 405B2 IXGR32N170H1 32N170H1
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2