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    IXGH32N170A Search Results

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    IXGH32N170A Price and Stock

    IXYS Corporation IXGH32N170A

    IGBT 1700V 32A 350W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH32N170A Tube 1
    • 1 $21.17
    • 10 $21.17
    • 100 $17.14133
    • 1000 $14.62069
    • 10000 $14.62069
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    Mouser Electronics IXGH32N170A
    • 1 $21.18
    • 10 $21.17
    • 100 $21.17
    • 1000 $21.17
    • 10000 $21.17
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    TTI IXGH32N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $16.64
    • 10000 $16.64
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    TME IXGH32N170A 1
    • 1 $27.55
    • 10 $21.91
    • 100 $19.74
    • 1000 $19.74
    • 10000 $19.74
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    Littelfuse Inc IXGH32N170A

    Disc Igbt Npt-Hi Voltage To-247Ad/ Tube |Littelfuse IXGH32N170A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXGH32N170A Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $13.08
    • 10000 $13.08
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    IXYS Integrated Circuits Division IXGH32N170A

    IGBT DIS.SINGLE 21A 1700V H.VOLTAGE TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGH32N170A
    • 1 $22.4654
    • 10 $22.4654
    • 100 $20.9957
    • 1000 $20.9957
    • 10000 $20.9957
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    IXGH32N170A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGH32N170A IXYS High Voltage IGBT Original PDF
    IXGH32N170A IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 32A 350W TO247 Original PDF
    IXGH 32N170A IXYS TRANS IGBT CHIP N-CH 1700 at TJ=25C TO 150CV 32A TO-247 AD Original PDF

    IXGH32N170A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DH60-18A

    Abstract: IXGH32N170A PLUS247
    Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1 PLUS247

    IXGX32N170H1

    Abstract: No abstract text available
    Text: IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Preliminary Data Sheet\ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original     		PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170H1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170AH1 IXGH32N170A 405B2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1

    IXGR32N170AH1

    Abstract: ISOPLUS247 IXGH32N170A
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170AH1 IXGH32N170A 405B2 IXGR32N170AH1 ISOPLUS247

    Dh60

    Abstract: No abstract text available
    Text: Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		PDF 32N170AH1 PLUS247 DH60-18A IXGH32N170A 405B2 Dh60

    IXGX32N170AH1

    Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
    Text: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		PDF O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C