Contextual Info: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

DDR2-667

Abstract: PC2-5300 SSTL-18
Contextual Info: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:

7F7F7F0B00000000

Abstract: PC2-5300 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16
Contextual Info: NT256T64UH4B0FN / NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 32Mx16/64Mx8 SDRAM B-Die Features • Performance:

Contextual Info: 172PIN DDR2 400 Micro-DIMM 512MB With 32Mx16 CL3 TS512MPA0512U Description Placement The TS512MPA0512U is a 64M x 64bits DDR2-400 Micro-DIMM. The TS512MPA0512U consists of 8pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed

Contextual Info: 172PIN DDR2 400 Micro-DIMM 256MB With 32Mx16 CL3 TS256MPA0256U Placement Description The TS256MPA0256U is a 32M x 64bits DDR2-400 Micro-DIMM. The TS256MPA0256U consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed

OTB-400-1

Contextual Info: MEMORY MODULE SDRam 64Mx48-SOP 3DSD2G64VB4488 Synchronous Dynamic Ram MODULE 2Gbit SDRAM organized as 32Mx64, based on 32Mx16 Pin Assignment Top View BGA 119 (8x15 - Pitch : 1.27mm) Features - Stack of four 512Mbit SDRam. - Organized as 32Mx64bit. - Single +3.3V power supply.

Contextual Info: MEMORY MODULE SDRAM 32Mx64-BGA DATA SHEET SYNCHRONOUS DRAM MODULE 3DSD2G64VB4383 2-Gbit SDRAM organized as 32Mx64, based on 32Mx16 Features - Stack of four 512Mbit SDRAM. - Organized as 32Mx64bit. - High frequency: 133Mhz - Single +3.3V power supply. - Fully synchronous; all signals registered on

Contextual Info: SG564323578NZ3R December 21, 2005 Ordering Information Module Part Numbers Description SG564323578NZ3R 32Mx64 256MB , SDRAM, 144-pin SODIMM, Unbuffered, Non-ECC, 32Mx16 Based, PC133, CL 3.0, 25.40mm, Green Module (RoHS Compliant). Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

SG564323FG8N0UU

Contextual Info: SG564323FG8N0UU May 19, 2006 Ordering Information Part Numbers Description Module Speed SG564323FG8N0DB 32Mx64 256MB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 32Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

IS42S16320D-7TLI

Abstract: IS42S16320D is42s16320 IS42S16320D-7BL IS42S86400D-7TL IS42S16320D-7TL IS45S16320D-7TLA1 IS42S16320D-5TL IS45S16320D-7TLA2 is42s86400
Contextual Info: IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 PRELIMINARY INFORMATION JUNE 2011 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

W3DG6433V-D1

Contextual Info: White Electronic Designs W3DG6433V-D1 256MB – 32Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION Burst Mode Operation The W3DG6433V is a 32Mx64 synchronous DRAM module which consists of four 32Mx16 SDRAM components in TSOP II package, and one 2Kb EEPROM in an 8

HY27USXX121M

Abstract: package tsop1 512MBIT hynix nand HY27US HY27 HY27SSXX121M
Contextual Info: HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary 0.1 Renewal Product Group

AS4C32M16S-7AI

Abstract: TSOP 54 II
Contextual Info: Datasheet | Rev. 1.1 | 2012 512Mbit Single-Data-Rate SDR SDRAM AS4C64M8S-7TCN 64Mx8 (16M x 8 x 4 Banks) AS4C32M16S-7TCN 32Mx16 (8M x 16 x 4 Banks) Datasheet Version 1. 1 1 512 Mbit SDRAM AS4C[08/16] Revision History R Rev. 1.1 April 2012 Revised Operating-; Standby- and Refresh Currents

DPSD32MX16WY5

Contextual Info: 32Mx16, 7.5 - 15ns, P12, M-Densus 30A231-00 A M-Densus 512 Megabit Synchronous DRAM 32MX16WY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of

Contextual Info: NT256T64UH4A1FN / NT512T64UH8A1FN 256MB: 32M x 64 / 512MB: 64M x 64 PC2-4200 / PC2-5300 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533/667 32Mx16 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • 32Mx64 and 64Mx64 Unbuffered DDR2 SO-DIMM based on

HY5PS121621BFP

Abstract: HY5PS121621B HY5PS121621BFP-2
Contextual Info: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

H5MS5162

Abstract: H5MS5162DFR h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400
Contextual Info: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Specification of 512Mb 32Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: HY5PS121621BFP 512Mb 32Mx16 DDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: Preliminary HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary

NT5TU32M16BG

Contextual Info: NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 & 32Mx16 DDR2 SDRAM B Die Features • Performance: PC2-4200 PC2-5300 PC2-6400

Contextual Info: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:

eeprom 34c

Abstract: M1N25664TUH4A2F
Contextual Info: M1N25664TUH4A2F-37B Green M1N51264TUH8A2F-37B (Green) 256MB: 32M x 64 / 512MB: 64M x 64 PC2-4200 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533 32Mx16 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)