2SK1728
Abstract: No abstract text available
Text: Ordering number:EN3823 N-Channel Silicon MOSFET 2SK1728 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1728] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN3823
2SK1728
2SK1728]
25max
2SK1728
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2SK1730
Abstract: No abstract text available
Text: Ordering number:EN3825 N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1730] 2.5 1.45 1.0
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EN3825
2SK1730
2SK1730]
2SK1730
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2SK1731
Abstract: No abstract text available
Text: Ordering number : EN3826 SANYO Semiconductors DATA SHEET 2SK1731 N-Channel Silicon MOSFET Ultrahigh Speed Switching Applications Package Dimensions Features unit:mm 2085A • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
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EN3826
2SK1731
2SK1731]
2SK1731
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EN3824
Abstract: 2SK1729
Text: Ordering number:EN3824 N-Channel Silicon MOSFET 2SK1729 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1729] 2.5 1.45 1.0
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EN3824
2SK1729
2SK1729]
EN3824
2SK1729
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2SK1732
Abstract: No abstract text available
Text: Ordering number:EN3827 N-Channel Silicon MOSFET 2SK1732 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3827
2SK1732
2SK1732]
2SK1732
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2SK1730
Abstract: No abstract text available
Text: Ordering number:EN3825 N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SK1730] 2.5 1.45 1.0
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EN3825
2SK1730
2SK1730]
2SK1730
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2SK1732
Abstract: No abstract text available
Text: Ordering number : EN3827 SANYO Semiconductors DATA SHEET 2SK1732 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.
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EN3827
2SK1732
2SK1732]
2SK1732
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EN4307
Abstract: 2SJ287
Text: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN4307
2SJ287
2SJ287]
25max
EN4307
2SJ287
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN4307
2SJ287
2SJ287]
25max
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2SK1728
Abstract: No abstract text available
Text: Ordering number:EN3823 N-Channel Silicon MOSFET 2SK1728 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1728] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN3823
2SK1728
2SK1728]
25max
2SK1728
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2SK1731
Abstract: No abstract text available
Text: Ordering number:EN3826 N-Channel Silicon MOSFET 2SK1731 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm
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EN3826
2SK1731
2SK1731]
2SK1731
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AX8896
Abstract: No abstract text available
Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage
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2SJ287
250mm2X
250mA
----10V
32593TH
AX-8896
AX8896
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E36J
Abstract: No abstract text available
Text: 2SK1731 LD L o w D rive S eries VDss = 30V 2085 N Channel Power M OSFET E'36J6 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Its height onboard is 9.5mm. - M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C
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2SK1731
--10V
32593TH
E36J
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2SK1729
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: E N 3 8 2 4 _ 2SK1729 No.3824 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M eets radial taping. A b s o lu te M axim um R a tin g s a t Ta = 25°C
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EN3824
2SK1729
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2SK1729
Abstract: No abstract text available
Text: 2SK1729 2087 LD L o w D rive S eries V dss= 1 0 0 V N Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M eets radial taping. A b so lu te M a x im u m R a tin g s a t Ta = 25°C D rain to Source V oltage
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2SK1729
32593TH
2SK1729
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2SK173
Abstract: No abstract text available
Text: 2SK1732 LD Low Drive Series V DSs = 30 V 2085 N Channel Power MOSFET 1:3827 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping. isolute M axim um R atings at Ta = 25°C
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2SK1732
32593TH
2SK173
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2SK1728
Abstract: s2mg
Text: Ordering number: EN3823 _ 2SK1728 No.3823 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings atT a = 25°C Drain to Source Voltage
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EN3823
2SK1728
s2mg
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2SK1732
Abstract: No abstract text available
Text: Ordering number: EN3827 _ 2SK1732 No.3827 N-Channel MOS Silicon FE T Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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EN3827
2SK1732
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2SJ287
Abstract: J600C
Text: Ordering number: EN 4307 No.4307 _ 2SJ287 P-Channel MOS Silicon FET Very High-Speed Switching Applications I Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage
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2SJ287
250mm2
J600C
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2SK1730
Abstract: No abstract text available
Text: Ordering n u m b e r:EN38 2 5 i _ 2SK1730 No.3825 N-Channel MOS Silicon FET SAHYO i Very High-Speed Switching Applications F eatu re s • Low ON resistance, • Very high-speed switching. •Low-voltage drive. • Meets radial taping. A bsolute M aximum R atings atT a = 25°C
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EN3825
2SK1730
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2SK1731
Abstract: 32593TH EN3826
Text: Ordering n u m b e r:E N 3 8 2 6 _ 2SK1731 N-Channel MOS Silicon FET No.3826 Very High-Speed Switching Applications F eatu res •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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EN3826
2SK1731
32593TH
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2SK1728
Abstract: No abstract text available
Text: 2SK1728 2062 LD Lo w D rive S e rie s V dss^ IO O V N Channel Power MOSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage Vqss Gate to Source Voltage
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2SK1728
250mm2X
2SK1728
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