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    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16410A HY51V1641 D32-00-MAY94 4b75Dflfl HY51V16410AJC HY51V16410ASLJC HY51V16410ATC HY51V16410ASLTC

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MP D 4 2 1 6 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The fiPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.


    OCR Scan     		PDF 16M-BIT fiPD4216405 tPD4216405 26-pin cycles/64 /1PD4216405-50 016to D0S71SS b45755S

    I486DX2

    Abstract: 62406 i486DX2 66 MCM62486A-11
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA 32K x 9 Bit BurstRAM Synchronous Static RAM MCM62486A With Burst Counter and Self-Timed Write The M C M 62 4 8 6A is a 294,912 b it synchronous static random access m em ory desig n ed to provide a burstable, h ig h -p erform a n ce, secondary cache


    OCR Scan     		PDF 2406A 2486A MCM62486A i486DX2 i486D 2466A I486DX2 62406 i486DX2 66 MCM62486A-11

    STA 518A

    Abstract: No abstract text available
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM67B518A 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write T h e M C M 67B 518A is a 589,824 bit synchronous fa st static random a ccess m e m ory designed to provide a burstable, h ig h -p erform a n ce, secondary cache


    OCR Scan     		PDF MCM67B518A i486TM applicationsB518A MCM678518AFN9 -------------67B MCM67B518AFNB MCM67B518AFN9 MCM67B518AZP8 MCM67B518AZP9 MCM67B518AFN10 STA 518A

    HC3208

    Abstract: H3208 HB3208 HI3208
    Text: H3208 1024 x 8 CMOS EEPROM M IC RO ELEC TR O N IC S C E N T E R DESCRIPTION Hughes H 3208 is a CMOS Electrically Erasable and Programmable ROM EEPROM organized as 1024 x 8 bits. Read, w rite and erase operations are performed w ith a single 5 V power supply using TTL


    OCR Scan     		PDF H3208 H3208 HC3208 HB3208 HI3208

    Untitled

    Abstract: No abstract text available
    Text: H M 5 4 6 5 S e r i e s 65536-word x 4-bit Dynamic Random Access Memory • FEATURES • Nibble mode capability • Single 5V ±10% • On chip substrate bias generator • • Low power; 350 mW active, 20 mW standby High Speed: Access time 120 ns/150 ns/200 ns (max.)


    OCR Scan     		PDF 65536-word ns/150 ns/200 P-18B 0465P 150ns su88j> 31IHM/C1V3H)

    circuit diagrams retu 3.02

    Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
    Text: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is


    OCR Scan     		PDF VMIVME-DR11W-A VMEbus-T0-DR11W VMIC60 000009D8 00000A8C DR11WA 00126C 00127C FF00FF00 00128C circuit diagrams retu 3.02 APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin

    SBH21-NBPN-D

    Abstract: No abstract text available
    Text: 8D0S/BI/9 ¡INHd i-NdSN-isHss r£6onMNnnw 33yjans\i3Ha\dDiNND3\sa3ay:H XDa\siN3NDdWD:\¡z I dO I -L33HS| a A3y 3NON ¡BTVDS ¿6011 D •ON ‘OMQ 3ZIS _ - J bßei-S'frTA ISNV :^3d DNDNVyTIOl Diyi3W03D ONV SNOISN3WIO I^ cftlä iN I V i V ■S3INCML»T3SNTTICSdOS3U«


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    SD-53047

    Abstract: TR94
    Text: I ZE-rXW ZEO 3IO-N3 Z i £ | i7 • 6qr#si*K>«inü®qiB ico a a g sB BS É a ü ia i c») t í í n t s a i a t 9 M]S5]Ntl3d N B lim a in o tu ia Q3sn 3B ION QTIDHS ONV tNVdVnXBlON 01 AUV13[UdOUd 5[ 1VH1 NOUVNUOJNI SNIV1N00 ONIlVtfl S[H1 0U003H N0ISIA3H


    OCR Scan     		PDF SD-53047â SD-53047 TR94

    A1HV

    Abstract: 512kx4 HY514400J70 hy514400j csi40
    Text: H Y 5 1 4 4 0 0 "HYUNDAI IM x 4 -b lt S e r ie s CM OS DRAM DESCRIPTION The HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400 1AC02-30-MA 1AC02-30-MAYM 0J740W 040K1 J0900 A1HV 512kx4 HY514400J70 hy514400j csi40

    Untitled

    Abstract: No abstract text available
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM72BA32 MCM72BA64 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72B A 32S G and M C M 72B A 64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor.


    OCR Scan     		PDF MCM72BA32 MCM72BA64 256KB 512KB 72BA32 72BA64 72BA64SG MCM72BA32SG66 MCM72BA64SG66

    burndy card edge 2,54

    Abstract: 244 u3d bv-1019 CEE2X60S HM303 CEE2X92SV K/T14 N03
    Text: CATALOG NO. CONTACTS PER ROW TOTAL NO CONTACTS C EE2X60S-V_Z_W 60 120 TABLE OF OWENSIONS NO C f CONTACT PAÄS BAY A BAY 8 11 49 TABLE I - TERMINATION LENGTHS D E H *.008 0.20 .590 (14,99) 2 49 0 [63,25] 3 3 4 0 [8 4 .6 4 ] S .010 [0.25] (SOLDER TAIL LENGTH)


    OCR Scan     		PDF EE2X60S-V 5M-19 IL-G-45204, REVI30NS SE95202 burndy card edge 2,54 244 u3d bv-1019 CEE2X60S HM303 CEE2X92SV K/T14 N03

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 5 1 V 4 4 0 0 B S e r ie s 1 M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4400B HY51V4400B 1AC12-00-MAY94 HY51V4400BJ HY51V4400BU HY51V4400BSU HY51V4400BT HY51V4400BLT

    MT56LC

    Abstract: TN-58-11
    Text: PRELIMINARY MT58LC64K32D9 64Kx 32 SYNCBURST SRAM |U |IC = R O N 64K x 32 SRAM O D A Ail +3 3V SUPPLY, PIPELINED , SING LE-C YCLE DESELEC T AND SELECTABLE BU RST M O DE O r iM IV I FEATURES • • • • • • • • • • • • • • • • •


    OCR Scan     		PDF MT58LC64K32D9 100-lead MT56LC TN-58-11

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM69H618 Product Preview 64Kx 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM69H618 is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache


    OCR Scan     		PDF MCM69H618 MCM69H618 i486TM MCM69H618FN8 MCM69H618FN8s 69H618 MCM6HH618FN8 69H618FN10 69H618FN12

    VXXXX

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67C518 Product Preview 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The MCM67C518 is a 589,824 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache for the i486™ and Pentium™


    OCR Scan     		PDF MCM67C518 MCM67C518 i486TM MCM67C518FN9S 67C518 MCM67C518FN7 MCM67C518FN9 VXXXX

    motorola memory

    Abstract: MCM62486
    Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM62486 32K x 9 Bit BurstRAM Synchronous Static RAM With Burst Counter and Self-Timed Write FN PACKAGE 44-LEAD PLCC CASE 777 PIN ASSIG N M EN T ^ I A2Í 7 6 ! oo I Í 12 I o I s h —i r—i . n . 1 i—i r-i >


    OCR Scan     		PDF MCM62486 MCM62486FN24S MCM62486 MCM62486FN14 MCM62486FN19 MCM62486FN24 motorola memory

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400A HY51V17400A 1AD35-00-MA 4b750flà HY51V17400AJ HY51V17400ASU HY51V17400AT HY51V17400ASLT

    2802S

    Abstract: r0201 D29/SEKI ST 22
    Text: 0002/81/9 'INiad N-lfrHSS 'SOlIlNNId IHSItfdlSMfrHBNdOlNNODNSiQlItGH XDS\SlN3NDdWDGVZ I dO T 133HS| 3N0N :31VDS SOTTI A3U b86T-S>TA ISNV M id DIU.L3W03D QNV SNOISN3WIQ 13ycft]31NI 'ON 'QMQ 3ZIS - is - ESZ'Z 96'SS 69 >S ZKES S IT S 88'OS I9'6b t>£'8t> ¿OYb


    OCR Scan     		PDF SBH41 SBH41-NBPB-D_ HEflDERC\CDNNTDP\BH41\CTRAIGHT PIWM1105. CEH41-N /18/200B 2802S r0201 D29/SEKI ST 22

    Untitled

    Abstract: No abstract text available
    Text: frS-rxiM ¿ 60 rZ0 -N3 • N o is s ir a s d N s ii id M i n o H i m a a s n 3B i o n a in o H S o n v a d iv y o y y o o N i X310W 0 1 A y v i3 iy d 0 d d S I 1VH 1 NOUVWdOdNI 5 N IV 1 N 0 0 ONIMVya SIH 1 JO I i.0 0 - 0 £ S £ S - a S 'ON 1 3 3 H S _'ON BNIMVdQ


    OCR Scan     		PDF X310W 33NVM 330NV 5310N 0V31- MXJ-54

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62973A Product Preview 4K x 1 2 B it Synchronous S ta tic R A M with Output Registers The MCM62S73A is a 49,152 bit synchronous static random access memory organized as 4096 words of 12 bits, fabricated using Motorola's second-generation high-performance


    OCR Scan     		PDF MCM62973A MCM62S73A 2373A Numbers--MCM62973AFN18 MCM62973AFN20 MCM62973A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67J618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The MCM67J618A is a 1,179,648 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache


    OCR Scan     		PDF MCM67J618A MCM67J618A i486TM MCM67J618AFN7s 67J618A MCM67J618AFN5 MCM67J618AFN7

    Untitled

    Abstract: No abstract text available
    Text: \ I ZETXAI Z£0>0I0-N3 I £ | A a 'ia e a a tiis e k M s i (» o»«—OEZ^s-as O il'l IHSVAVH’ IN H SIN IJ A IT " " ~? I E " x v ia i S310N 33S xeiouu 3R< •Q13“ 00 N¥d¥r-X330N V _ V 'S3Id3S SSOSS ‘I7S0SS HUM S31VIAI ° X - n ^ 9 3 0 9 9 “179 0 3 3 :


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