Untitled
Abstract: No abstract text available
Text: A10 6-…-8 – 7-.-2 hinzu 21MAY2010 KS A11 7-…-3 – 8-.-1 hinzu 13SEP2010 KS A12 8-.-2 – 8-.-7 hinzu 31AUG2012 KS A13 8-…-8 – 8-.-9 hinzu 29AUG2013 KS DocManager Die Tabellenseiten müssen einzeln gedruckt werden. Ab XP macht der Imagewriter nur noch Gruppe 4
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21MAY2010
13SEP2010
31AUG2012
29AUG2013
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TL3202
Abstract: TLV3201AIDBV TLV3012 equivalent
Text: TLV3201 TLV3202 www.ti.com SBOS561A – MARCH 2012 – REVISED JUNE 2012 40-ns, microPOWER, Push-Pull Output Comparators Check for Samples: TLV3201, TLV3202 FEATURES DESCRIPTION • • The TLV3201 and TLV3202 are single- and dualchannel comparators that offer the ultimate
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TLV3201
TLV3202
SBOS561A
40-ns,
TLV3201,
SC70-5,
OT23-5,
TLV3202
TL3202
TLV3201AIDBV
TLV3012 equivalent
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tms320 54x mcbsp
Abstract: No abstract text available
Text: TMS320VC5441 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS122F December 1999 − Revised October 2008 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320VC5441
SPRS122F
SPRS122E
tms320 54x mcbsp
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STF6N95K5
Abstract: 16958 std6n95k5 STW6N95K5 6N95K5
Text: STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK Datasheet — production data Features TAB Type VDSS RDS on max. ID PW STD6N95K5 9A
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STD6N95K5,
STF6N95K5,
STP6N95K5,
STW6N95K5,
STU6N95K5
O-220FP,
O-220,
O-247
STD6N95K5
STF6N95K5
16958
STW6N95K5
6N95K5
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STPSC
Abstract: 8a650
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power
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STPSC8H065
STPSC
8a650
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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Untitled
Abstract: No abstract text available
Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC20H065C
O-220AB
STPSC20H065CT
DocID023605
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Untitled
Abstract: No abstract text available
Text: TPS40422 www.ti.com SLUSAQ4C – OCTOBER 2011 – REVISED AUGUST 2012 Dual-Output or Two-Phase Synchronous Buck Controller with PMBus Check for Samples: TPS40422 FEATURES APPLICATIONS • • • • • • • 1 • • • • • • • • • • •
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TPS40422
2N3904
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Untitled
Abstract: No abstract text available
Text: ADS1230 www.ti.com SBAS366B – OCTOBER 2006 – REVISED SEPTEMBER 2012 20-Bit Analog-to-Digital Converter For Bridge Sensors Check for Samples: ADS1230 FEATURES DESCRIPTION • • • • The ADS1230 is a precision 20-bit analog-to-digital converter ADC . With an onboard low-noise
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ADS1230
SBAS366B
20-Bit
ADS1230
10SPS
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Untitled
Abstract: No abstract text available
Text: STD3PK50Z P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on max STD3PK50Z 500 V < 4Ω • Gate charge minimized ■ Extremely high dv/dt capability ■
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STD3PK50Z
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oaxq
Abstract: INA321 application
Text: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)
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OPA333
OPA2333
SBOS351C
oaxq
INA321 application
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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TPS5480
Abstract: TPS5481
Text: TPS5480, TPS5481 www.ti.com SLVSBH5 – JULY 2012 10-V TO 24-V INPUT, 5-V OUTPUT, 2.1-A STEP-DOWN VOLTAGE CONVERTER Check for Samples: TPS5480, TPS5481 FEATURES 1 • • • • • • 5-V Synchronous/Asynchronous Hysteretic Switching Regulator Low Output Ripple and Allows Ceramic Output
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TPS5480,
TPS5481
TPS5480
TPS5481
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STPSC20H065C
Abstract: STPSC20H065CW diode 1.e
Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1
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STPSC20H065C
STPSC20H065C
STPSC20H065CW
diode 1.e
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TDA7266SAN
Abstract: TDA7297SA tda7297 Layout tda7266sa
Text: TDA7266SAN 5 W + 5 W dual bridge amplifier Datasheet − production data Features • Wide supply voltage range 3.5 - 13 V ■ Minimum external components – No SWR capacitor – No bootstrap – No Boucherot cells – Internally fixed gain ■ Standby & mute functions
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TDA7266SAN
CLIPWATT15
TDA7266SAN
TDA7266,
TDA7266SA,
TDA7297SA
TDA7297.
Clipwatt15
tda7297 Layout
tda7266sa
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UDFN6
Abstract: No abstract text available
Text: STM6524 6-pin Smart Reset Datasheet − production data Features • Operating voltage 1.65 V to 5.5 V ■ Low supply current 1.5 µA ■ Integrated test mode ■ Dual Smart Reset™ push-button inputs with fixed extended reset setup delay tSRC from 0.5 s to 10 s in 0.5 s steps (typ.), option with
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STM6524
UDFN6
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TPS5480
Abstract: TPS5481
Text: TPS5480, TPS5481 www.ti.com SLVSBH5 – JULY 2012 10-V TO 24-V INPUT, 5-V OUTPUT, 2.1-A STEP-DOWN VOLTAGE CONVERTER Check for Samples: TPS5480, TPS5481 FEATURES 1 • • • • • • 5-V Synchronous/Asynchronous Hysteretic Switching Regulator Low Output Ripple and Allows Ceramic Output
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TPS5480,
TPS5481
TPS5480
TPS5481
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weigh scale calibration program
Abstract: No abstract text available
Text: ADS1230 www.ti.com SBAS366B – OCTOBER 2006 – REVISED SEPTEMBER 2012 20-Bit Analog-to-Digital Converter For Bridge Sensors Check for Samples: ADS1230 FEATURES DESCRIPTION • • • • The ADS1230 is a precision 20-bit analog-to-digital converter ADC . With an onboard low-noise
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ADS1230
SBAS366B
20-Bit
10SPS
80SPS
18-Bit
10SPS
80SPS
weigh scale calibration program
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Untitled
Abstract: No abstract text available
Text: TPS40422 www.ti.com SLUSAQ4C – OCTOBER 2011 – REVISED AUGUST 2012 Dual-Output or Two-Phase Synchronous Buck Controller with PMBus Check for Samples: TPS40422 FEATURES APPLICATIONS • • • • • • • 1 • • • • • • • • • • •
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TPS40422
2N3904
600-mV
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Untitled
Abstract: No abstract text available
Text: STD6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220, TO-247 and IPAK packages Datasheet - production data Features TAB TAB Order codes 3 1 DPAK 3 1 2 VDS RDS on max. ID PTOT
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STD6N95K5,
STP6N95K5,
STW6N95K5,
STU6N95K5
O-220,
O-247
STD6N95K5
STP6N95K5
O-220
STW6N95K5
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IN250
Abstract: 49ball BQ24160YFFR
Text: bq24160, bq24161 bq24163, bq24168 www.ti.com SLUSAO0A – NOVEMBER 2011 – REVISED MARCH 2012 2.5A, Dual-Input, Single Cell Switchmode Li-Ion Battery Charger with Power Path Management and I2C Interface Check for Samples: bq24160, bq24161, bq24163, bq24168
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bq24160
bq24161
bq24163
bq24168
bq24160/1/3
IN250
49ball
BQ24160YFFR
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: TPS2552, TPS2553 TPS2552-1, TPS2553-1 SLVS841E – NOVEMBER 2008 – REVISED FEBRUARY 2012 www.ti.com PRECISION ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES Check for Samples: TPS2552, TPS2553, TPS2552-1, TPS2553-1 FEATURES DESCRIPTION • • •
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TPS2552,
TPS2553
TPS2552-1,
TPS2553-1
SLVS841E
TPS2553,
TPS2550/51
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