mdd1653
Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
Text: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching
|
Original
|
MDD1653
MDD1653
mdd1653 MOSFET
MagnaChip Semiconductor Ltd. MDD1653
MDD*1653
50a 30v 8.5m MOSFET
MDD1653R
30V 20A power p MOSFET
MagnaChip Semiconductor Ltd. MDD1653 rg
MDD1653T
MAGNACHIP
|
PDF
|
MDD1653
Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state
|
Original
|
MDD1653
MDD1653
MDD*1653
mdd1653 MOSFET
MDD1653rh
MDD1653RP
MagnaChip Semiconductor Ltd. MDD1653
MagnaChip Semiconductor Ltd. MDD1653 rg
1E52
MDD165
MDD1653R
|
PDF
|
09N03
Abstract: MEN09N03 MEN09N03BJ3 i 09N03 C430J3 09n0
Text: CYStech Electronics Corp. Spec. No. : C430J3 Issued Date : 2008.10.20 Revised Date :2009.02.04 Page No. : 1/7 N-Channel Logic Level Enhancement Mode Power MOSFET MEN09N03BJ3 BVDSS 30V ID 50A RDSON 9mΩ Features • VDS=30V, ID=50A, RDS ON =9mΩ • Low Gate Charge
|
Original
|
C430J3
MEN09N03BJ3
O-252
UL94V-0
09N03
MEN09N03
MEN09N03BJ3
i 09N03
C430J3
09n0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 50A, 6.5mΩ General Description Features The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
|
Original
|
MDD1654
MDD1654
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 30V 50A
|
Original
|
AON7428
AON7428
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. VDS 30V 50A ID (at VGS=10V)
|
Original
|
AON7428
AON7428
|
PDF
|
AON7405
Abstract: 30V 20A power p MOSFET
Text: AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. VDS -30V -50A ID (at VGS= -10V)
|
Original
|
AON7405
AON7405
30V 20A power p MOSFET
|
PDF
|
n308ad
Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
Text: PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
|
Original
|
ISL9N308AD3
ISL9N308AD3ST
2600pF
O-251AA)
O-252
O-252)
n308ad
ISL9N308AD3ST
N-308
35KP
|
PDF
|
n306ad
Abstract: N306A ISL9N306AD3
Text: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
|
Original
|
ISL9N306AD3
ISL9N306AD3ST
3400pF
n306ad
N306A
|
PDF
|
n306ad
Abstract: N306A
Text: PWM Optimized ISL9N306AD3ST/ ISL9N306AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
|
Original
|
ISL9N306AD3ST/
ISL9N306AD3
3400pF
O-252
O-252)
O-251AA)
n306ad
N306A
|
PDF
|
n308ad
Abstract: N-308
Text: PWM Optimized ISL9N308AD3ST/ ISL9N308AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
|
Original
|
ISL9N308AD3ST/
ISL9N308AD3
2600pF
O-252
O-252)
O-251AA)
n308ad
N-308
|
PDF
|
n306ad
Abstract: N306A ISL9N306AD3 ISL9N306AD3ST
Text: ISL9N306AD3 / ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
|
Original
|
ISL9N306AD3
ISL9N306AD3ST
3400pF
n306ad
N306A
ISL9N306AD3ST
|
PDF
|
n312ad
Abstract: No abstract text available
Text: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
|
Original
|
ISL9N312AD3ST/
ISL9N312AD3
1450pF
O-252
O-252)
O-251AA)
n312ad
|
PDF
|
N-308A
Abstract: TO-252 MOSFET
Text: PWM Optimized ISL9N308AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
|
Original
|
ISL9N308AD3ST
2600pF
O-252
N-308A
TO-252 MOSFET
|
PDF
|
|
|
G2U4407
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/07/05 REVISED DATE : G2U4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The G2U4407 provide the designer with the best combination of fast switching, ruggedized device design, low
|
Original
|
G2U4407
G2U4407
O-262
|
PDF
|
168E
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 50A, 30V N-CHANNEL POWER MOSFET FEATURES * RDS ON < 14 mΩ @ VGS = 10 V, ID = 30 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION
|
Original
|
UT50N03
UT50N03L-TM3-T
UT50N03G-TM3-T
UT50N03L-TN3-R
UT50N03G-TN3-R
UT50N03L-TND-R
UT50N03G-TND-R
O-251
O-252
O-252D
168E
|
PDF
|
CMT60N03
Abstract: CMT60N03N252 CMT60N03N263 N-Channel MOSFET 40V 7A
Text: CMT60N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID Inductive Switching Curves 30V 10.8mΩ 50A Improved UIS Ruggedness
|
Original
|
CMT60N03
O-252
O-263
CMT60N03
CMT60N03N252
CMT60N03N263
N-Channel MOSFET 40V 7A
|
PDF
|
GU4407
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GU4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The GU4407 provide the designer with the best combination of fast switching, ruggedized device design, low
|
Original
|
GU4407
GU4407
O-263
|
PDF
|
GE4407
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/06/28 REVISED DATE : GE4407 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 14m -50A Description The GE4407 provide the designer with the best combination of fast switching, ruggedized device design, low
|
Original
|
GE4407
GE4407
O-220
|
PDF
|
fs50smh-03
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50SMH-03 HIGH-SPEED SWITCHING USE FS50SMH-03 • 2.5V DRIVE • V dss . 30V .22mQ • ID . 50A
|
OCR Scan
|
FS50SMH-03
1CH23
fs50smh-03
|
PDF
|
742 mosfet
Abstract: No abstract text available
Text: M ITSUBISHI Neh POW ER M OSFET FS50AS-03 HIGH-SPEED SW ITCHING USE FS50AS-03 • 10V DRIVE • V D S S .30V • ros ON (MAX) . 23mi2 • Id . 50A
|
OCR Scan
|
FS50AS-03
23mi2
571CH23
742 mosfet
|
PDF
|
FS50A
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ! FS50ASJ-03 | HIGH-SPEED SWITCHING USE FS50ASJ-03 • 4V D R IV E • VDSS . .30V • rDS ON (MAX) • •■• ■19mi2 .50A • Id . • Integrated Fast Recovery Diode (TYP.)
|
OCR Scan
|
FS50ASJ-03
19mi2
1CH23
FS50A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50SM-03 HIGH-SPEED SWITCHING USE FS50SM-03 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX 1.5 { 3.2 £ 5.45 0.6 oi 10V DRIVE V d s s . 30V rDS ON (MAX). 23mi2 I d . 50A
|
OCR Scan
|
FS50SM-03
23mi2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE FS50AS-03 ' 10V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 23mi2 .50A 60ns APPLICATION M otor control, Lamp control, Solenoid control
|
OCR Scan
|
FS50AS-03
23mi2
|
PDF
|
