Untitled
Abstract: No abstract text available
Text: EDI8F3265C 64Kx32 SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.
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EDI8F3265C
64Kx32
EDI8F3265C
64Kx32.
64Kx4
01581USA
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STPIC6D595
Abstract: STPIC6D595M STPIC6D595MTR STPIC6D595TTR TSSOP16 2340UA
Text: STPIC6D595 Power logic 8-bit shift register Features • Low RDS on : 4Ω typ ■ Eight 100mA DMOS outputs ■ 250mA current limit capability ■ Device are cascadable ■ Low power consumption DIP-16 Description SO-16 This STPIC6D595 is a monolithic, mediumvoltage, low current power 8-bit shift register
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STPIC6D595
100mA
250mA
DIP-16
SO-16
STPIC6D595
STPIC6D595M
STPIC6D595MTR
STPIC6D595TTR
TSSOP16
2340UA
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MARK 8E diode
Abstract: EDI8F3265C15MMC EDI8F3265C15MZC EDI8F3265C20MMC EDI8F3265C20MZC EDI8F3265C25MMC EDI8F3265C25MZC jedec 64-pin simm
Text: EDI8F3265C 64Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 64Kx32 bit CMOS Static The EDI8F3265C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4
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EDI8F3265C
64Kx32
EDI8F3265C
64Kx32.
64Kx4
FO-00342R1
MARK 8E diode
EDI8F3265C15MMC
EDI8F3265C15MZC
EDI8F3265C20MMC
EDI8F3265C20MZC
EDI8F3265C25MMC
EDI8F3265C25MZC
jedec 64-pin simm
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Galvanic Skin Response Sensor
Abstract: AD293A AD294 HY20A HY20 AD293
Text: -. W ANALOG DEVICES HybridIndustrial/ MedicalIsolationAmplifier AD293/AD294 I I FEATURES High Common-Mode Voltage: AD293 :!:2500V peak max, cont. AD294 :!:3500 peak max, cont.; :!:8000V peak max Pulse Nonlinearity: :!:0.05% max AD293B Adjustable Input & Output Gain: 1VN to 1000VN
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AD293/AD294
AD293
AD294
AD293B)
1000VN
AD293/AD294
AD293
Galvanic Skin Response Sensor
AD293A
AD294
HY20A
HY20
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equivalent diode no. for diode by 127
Abstract: No abstract text available
Text: STPIC6C595 Power logic 8-bit shift register Features • Low RDS on : 4Ω typ ■ 30mJ avalanche energy ■ eight 100mA DMOS outputs ■ 250mA current limit capability ■ 33V output clamp voltage ■ Device are cascadable ■ Low power consumption SO-16
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STPIC6C595
100mA
250mA
SO-16
TSSOP16
STPIC6C595
equivalent diode no. for diode by 127
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ADZ 12
Abstract: ZA32
Text: fax id: 1086 ^;aaazgg s t risaliiJF ;U I FlmCbti CY61256 PRELIMINARY 256K RAM/2M ROM Features tha t reduces po w e r con sum p tion by m ore than 99% when de selected. • 1 .8 V -3 .3 V o p e ratio n • 32K x 8 RA M and 256K x 8 M ask RO M co m b in a tio n
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CY61256
32Kx8
256Kx8
CY61256
ADZ 12
ZA32
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Untitled
Abstract: No abstract text available
Text: HM2142 4 0 9 6 -words x 1-b it Very High Speed Random Access Memory The H M 2142 is 4096-words x 1-bit very high speed read/write, random access memory developed for high speed systems such as pads and control/buffer storages. The fabrication process uses the Hitachi’s low capacitance, oxide
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HM2142
4096-words
cerdip-20
DG-20N)
30pFI
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CY7C429-25PC
Abstract: CY7C420 CY7C421 CY7C425 CY7C429 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7
Text: bSE D • S S ö ^ b b E O O l O bB l bTD I CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR ICYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 Cascadable 512 x 9 FIFO Cascadable lK x 9 FIFO Cascadable 2K x 9 FIFO • TTL compatible • Three-state outputs
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CY7C420,
CY7C421
CY7C424,
CY7C425
CY7C428,
CY7C429
300-miI
300-mil
CY7C421,
CY7C429-25PC
CY7C420
IDT7201
IDT7202
IDT7203
CY7C429-30DC
vcy7
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circuit diagram of speech to text
Abstract: 12 volt audio amplifier class circuit diagram block diagram of speech to text converter circuit diagram of text to speech circuit diagram sound effects SC-01-A SC-01 sc-01a speech synthesizer votrax
Text: SC-01 SPEECH SYNTHESIZER '"PoAa/X 1394 Rankin Troy, MI. 480 8 3 DATA SHEET Votrax CMOS Phoneme Speech Synthesizer G E N E R A L D E S C R IP T IO N The SC-01 Speech Synthesizer is a co m p le te ly self-contained solid state device. T his single ch ip p h o n e tic a lly synthesizes
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SC-01
circuit diagram of speech to text
12 volt audio amplifier class circuit diagram
block diagram of speech to text converter
circuit diagram of text to speech
circuit diagram sound effects
SC-01-A
sc-01a
speech synthesizer
votrax
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Untitled
Abstract: No abstract text available
Text: W D EDI8F3265C \ 64Kx32 SRAM Module ELECTRONIC DESIGNS, INC. 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3265C is a high speed 2 megabit Static RAM 64Kx32 bit CMOS Static module organized as 64Kx32. This module is constructed Random Access Memory
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EDI8F3265C
64Kx32
EDI8F3265C
64Kx32.
64Kx4
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2SC4767
Abstract: 05t transistor
Text: Panasonic Transistor 2SC4767 Silicon NPN epitaxial planer type For high-frequency pow er am plification • Features • High transition frequency fT. • Output of 0.6W is obtained in the VHF band f=175MHz . A bsolute M axim um Ratings (Ta=25°C) Symbol
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2SC4767
175MHz)
0025pF
2SC4767
05t transistor
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siemens mov all range
Abstract: intel 80c535 n
Text: 47E D • 023SbDS OOaô'ID? b » S I E G SIEMENS AKTIENGESELLSCHAF T- s SAB 80C515/80C535 8-Bit CMOS Single-Chip Microcontroller Advance Inform ation SAB 80C515 / 80C515-16 CMOS microcontroller with factory mask-programmable ROM SAB 80CS35 / 80C535-16 CMOS microcontroller for external ROM
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023SbDS
80C515/80C535
80C515
80C515-16
80CS35
80C535-16
80C515-T40/110,
80C535-T40/110
80C515-T40/85,
80C53S-T40/85
siemens mov all range
intel 80c535 n
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Untitled
Abstract: No abstract text available
Text: 82S136/82S136A-F.N • 82S137/82S137A-F.N DESCRIPTION FEATURES The 82S136 and 82S137 are fie ld p ro g ra m mable, w hich means th a t custom patterns are im m e diate ly available by fo llo w in g the fusin g procedu re given in th is data sheet. The standard 82S136 and 82S137 are su p
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82S136/82S136A-F
82S137/82S137A-F
82S136
82S137
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B057r
Abstract: cv7c130 CY7C130 CY7C131 CY7C140 CY7C141 Zl13
Text: CYPRESS SEMI CONDUCTOR 4bE D • 2 5 0 ^ 2 ''-T ^ C r L V O * ODDbBMO 1 E S C Y P C Y 7 C 1 3 0 /C Y 7 C 1 3 1 C Y 7 C 1 4 0 /C Y 7 C 1 4 1 CYPRESS SEMICONDUCTOR 1024 x 8 Dual-Port Static RAM Features Functional Description • 0,8-micron CMOS for optimum
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CY7C130/CY7C131
CY7C140/CY7C141
CV7C130/CY7C131
CY7C140/
CY7C141
CY7C130/
CY7C131;
CY7C130/CY7C131/CY7C140/
CY7C141
B057r
cv7c130
CY7C130
CY7C131
CY7C140
Zl13
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82S137
Abstract: r2 137 82S136 GL 137A 82S137AF
Text: 82S136/82S136A-F.N • 82S137/82S137A-F.N DESCRIPTION FEATURES The 82S136 and 82S137 are field p ro g ra m mable, w hich means th a t custom patterns are im m e diate ly available by fo llo w in g the fusin g procedu re given in th is data sheet. The standard 82S136 and 82S137 are su p
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82S136/82S136A-F
82S137/82S137A-F
82S136
82S137
r2 137
GL 137A
82S137AF
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DSMGQ308
Abstract: HD614042 hitachi hmcs40 hmcs404 HD614045 HD614048 HMCS400 HMCS404AC HMCS404C HMCS404CL
Text: AUTOMOTIVE VERSION HMCS404C HD614042 , HMCS404CL (HD614045), HMCS404AC (HD614048) 4-Bit CMOS Microcomputers_ The HMCS404C/CL/AC are CMOS 4-bit single-chip m icro computers which are members o f the HMCS400 series. The HMCS404C/CL/AC have efficient and powerful architec
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HMCS404C
HD614042)
HMCS404CL
HD614045)
HMCS404AC
HD614048)
HMCS404C/CL/AC
HMCS400
HMCS40
DSMGQ308
HD614042
hitachi hmcs40
hmcs404
HD614045
HD614048
HMCS404AC
HMCS404C
HMCS404CL
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N82HS641
Abstract: SIGNETICS* Generic II fusing procedure
Text: Philips Components-Signetics 82HS641C Document No. 853-1468 ECN No. 00340 Date of Issue September 7,1 990 Status Product Specification 64K-bit TTL bipolar PROM Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82HS641C is field programmable, which means that custom patterns are
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82HS641C
64K-bit
82HS641C
following8192
30pFi
N82HS641
SIGNETICS* Generic II fusing procedure
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HD614022
Abstract: S8Y1 rf tube sealer Murata CSA2.000MK YA11 csa2.000mk hitachi hmcs40 LB204 100T2 hitachi pmos microcomputer
Text: H I T A C H I / n C U / f l P U I f l E D • 4 4 i b 2 4 O O l b b f l ? f l H M CS402C H D614 0 2 2 ,« «^ H MCS402CM HD614025)/ H M CS402AC ( H D614028) DESCRIPTION The HMCS402C/CL/AC are CMOS 4-bit single-chip micro computers with high performance and low power dissipation.
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44eibSG4
MCS402C(
D614022
HMCS402CL
HD614025
HMCS402AC(
D614028)
HMCS402C/CL/AC
HMCS400
HD614022
S8Y1
rf tube sealer
Murata CSA2.000MK
YA11
csa2.000mk
hitachi hmcs40
LB204
100T2
hitachi pmos microcomputer
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A12C
Abstract: A14C CYM1464 cs 2502
Text: YPRESS SEMICONDUCTOR Mb E \ T -4 6 -2 3 -1 4 CYPRESS SEMICONDUCTOR Features Hlgh-density 4-megabit SRAM module High-speed CMOS SRAMs — Access time of 20 ns Low active power — 1.93VV max. JEDEC-compatible pinout 32-pln, 0.6-inch-ttide DIP package TTL-compatible inputs and outputs
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CTM1464
T-46-23-14
512Kx
32-pln,
CYM14C4
CYM1464
CYM1464PDâ
CYM1464PD-25C
CYM1464PD-30C
A12C
A14C
CYM1464
cs 2502
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RJ 000002 gel
Abstract: marking FAT SMEW ERAA MARKING CODE LH28F320S5HB-L90 erase problem
Text: SHARP LHF32K16 1 CONTENTS PAGE PAGE 1 INTRODUCTION. 3 5 DESIGN 1.1 Product 5.1 Three-Line Output Control.31
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LHF32K16
LH28F320S5X-LXX
D021413
RJ 000002 gel
marking FAT
SMEW
ERAA MARKING CODE
LH28F320S5HB-L90
erase problem
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PDF
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82S181A
Abstract: No abstract text available
Text: Philips Components-Signetics Document No. 853-0130 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S181 / 82S181A 8K-bit TTL bipolar PROM Memory Products DESCRIPTION The 82S181 and 82S181Aarefield programmable, which means that
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82S181
82S181A
82S181Aarefield
82S181
82S181A
organization25V
N82S181
N82S181A
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TME 87
Abstract: TME 87 I 46/SMC 5/TME 87 I TME 87 i 3
Text: EDI8F3265C ^ E D L 64Kx32 SRAM Module ELECTRONIC 06SIGN& MC. 64Kx32 Static RAM CMOS, High Speed Module F e a tu r e s 64Kx32 bit CMOS Static The EDI8F3265C is a high speed 2 megabit Static RAM Random Access Memory module organized as 64Kx32. This module is constructed
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EDI8F3265C
64Kx32
06SIGN&
EDI8F3265C
64Kx32.
64Kx4
ED0F3265C
TME 87
TME 87 I
46/SMC 5/TME 87 I
TME 87 i 3
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 8-Bit Single Chip Microcontroller SAB 83515-4 Preliminary Data SAB 83515-4 SAB 83515-4-T3 SAB 83515-4-T4 M icrocontroller with factory m ask-programmable ROM ext. tem perature range: - 40 to 85 ”C ext. tem perature range: - 40 to 110 "C • 16 K x 8 ROM
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83515-4-T3
83515-4-T4
16-bit
A8-A13
30pFi10pF
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