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    30N60U Price and Stock

    IXYS Corporation IXSH30N60U1

    IGBT 600V 50A 200W TO247
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    IXYS Corporation IXGH30N60U1

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    30N60U Datasheets Context Search

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    30N60

    Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90


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    PDF Wei60A 30N60 30N60A O-204AE 30N60 30N60A 30N60U1 N60A igbt 30N60 IXGH30N60U1 IXGH30N60AU1 IXGM30N60A

    30N60A

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF N60U1 N60AU1 O-247 30N60U1 30N60AU1 30N60A

    30N60U1

    Abstract: 30n60
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF N60U1 N60AU1 30N60U1 30N60AU1 30N60U1 30n60

    IXGH30N60U1

    Abstract: IXGH30N60AU1 30N60U1 n60u1 30N60AU1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 30 N60U1 IXGH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    PDF N60U1 N60AU1 30N60AU1 30N60U1 IXGH30N60U1 IXGH30N60AU1 30N60U1 n60u1 30N60AU1

    30n60

    Abstract: 30N60A igbt 30N60 30 N60A N60A 30N60U1 IXGH30N60AU1 IXGH30N60A IXGH30N60U1
    Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90


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    PDF 30N60 30N60A O-204AE 30N60 30N60A 30N60U1 30N60AU1 igbt 30N60 30 N60A N60A IXGH30N60AU1 IXGH30N60A IXGH30N60U1

    b1113

    Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
    Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2


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    PDF PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14

    30N60AU1

    Abstract: 30N60U1 IXSH30N60U1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR


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    PDF N60U1 N60AU1 30N60U1 30N60AU1 30N60AU1 30N60U1 IXSH30N60U1

    30N60

    Abstract: 30N60A igbt 30N60 N60A IXYS 30N60 mos 30N60 30N60U1 A2760
    Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    PDF O-247 30N60 30N60A O-204AE 30N60 30N60A igbt 30N60 N60A IXYS 30N60 mos 30N60 30N60U1 A2760

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


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    PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF N60U1 N60AU1 O-247 30N60U1 30N60AU1

    30n60

    Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2


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    PDF IXGH30 N60U1 N60AU1 30N60U1 30N60AU1 30n60 IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    30n60

    Abstract: 1XSH30N60A
    Text: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V


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    PDF 30N60 30N60A 30N60U1 30N60AU1 1XSH30N60A

    30n60

    Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
    Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100


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    PDF 00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1

    30n60u

    Abstract: 30N60A ixgh30n60a IXGM30N60
    Text: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms


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    PDF O-247 30N60U1 30N60AU1 4bflb22b 30n60u 30N60A ixgh30n60a IXGM30N60

    85C0

    Abstract: IXSN35N100U1 SO 042
    Text: Insulated Gate Bipolar Transistors IGBT "S" series with improved SCSOA capability Type V v CE(aat} c te8 max. typ- typ- ^auc max. PF Outlines on page 33 C = Collector, E Emitter, G = Gate, KE = Kelvin Emitter US K/W W 10 0.83 0.62 0.42 155 45 50 90 US 0.4


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    PDF 20N60® 30N60 40N60 25N100 45N100 N100U1 OT-227B 85C0 IXSN35N100U1 SO 042

    QAE 21.2

    Abstract: No abstract text available
    Text: v¥ Low V IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 ces 600 V 600 V ^C25 V ¥ C E sat 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR


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    PDF N60U1 N60AU1 Q003bfl3 30N60U1 30N60AU1 4bflb22fc> 0003bfl4 QAE 21.2

    30N80

    Abstract: No abstract text available
    Text: in ixY S Low VCE sat IGBT with Diode High Speed IGBT with Diode iXSH 30 N60U1 IXSH 30 N60AU1 v* C E S ^C25 V * CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SO A Capability Symbol Test Conditions Maximum Ratings v CES ^ v CGR Tj = 25°C to 150°C; Rge = 1 MO


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    PDF N60U1 N60AU1 T0-247 30N60U1 30N60AU1 30N80

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


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    PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


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    PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A

    40N60A

    Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
    Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A


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    PDF 2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


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    PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Low V CE sat „ , „ IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A v CES ^C25 V C E (sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i


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    PDF 30N60 30N60A O-247

    30n60

    Abstract: N60A mos 30N60 igbt 30N60 30N60A GE1001 IXYS 30N60 30n60 igbt
    Text: H Y Y JL ^ sIk»!? flHVwÎ A- Low VC„, ,. IGBT E s a t High Speed IGBT ix s h /ix s m IXSH/IXSM 30N60 30N60A v CES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test C onditions Maximum Ratings V CES Td = 25°C to 150°C


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    PDF 30N60 30N60A O-247 O-204 30N60U1 30N60AU1 N60A mos 30N60 igbt 30N60 GE1001 IXYS 30N60 30n60 igbt